1
|
Shi XL, Wang L, Lyu W, Cao T, Chen W, Hu B, Chen ZG. Advancing flexible thermoelectrics for integrated electronics. Chem Soc Rev 2024. [PMID: 39143899 DOI: 10.1039/d4cs00361f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field.
Collapse
Affiliation(s)
- Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Lijun Wang
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Wanyu Lyu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Tianyi Cao
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Wenyi Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Boxuan Hu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland 4000, Australia.
| |
Collapse
|
2
|
Qu J, Cheng H, Lan H, Zheng B, Luo Z, Yang X, Yi X, Wu G, Chen S, Pan A. Space-Confined Growth of Ultrathin P-Type GeTe Nanosheets for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309391. [PMID: 38456381 DOI: 10.1002/smll.202309391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Revised: 02/18/2024] [Indexed: 03/09/2024]
Abstract
As p-type phase-change degenerate semiconductors, crystalline and amorphous germanium telluride (GeTe) exhibit metallic and semiconducting properties, respectively. However, the massive structural defects and strong interface scattering in amorphous GeTe films significantly reduce their performance. In this work, two-dimensional (2D) p-type GeTe nanosheets are synthesized via a specially designed space-confined chemical vapor deposition (CVD) method, with the thickness of the GeTe nanosheets reduced to 1.9 nm. The space-confined CVD method improves the crystallinity of ultrathin GeTe by lowering the partial pressure of the reactant gas, resulting in GeTe nanosheets with excellent p-type semiconductor properties, such as a satisfactory on/off ratio of 105. Temperature-dependent electrical measurements demonstrate that variable-range hopping and optical-phonon-assisted hopping mechanisms dominate transport behavior at low and high temperatures, respectively. GeTe devices exhibit significantly high responsivity (6589 and 2.2 A W-1 at 633 and 980 nm, respectively) and detectivity (1.67 × 1011 and 1.3 × 108 Jones at 633 and 980 nm, respectively), making them feasible for broadband photodetectors in the visible to near-infrared range. Furthermore, the fabricated GeTe/WS2 diode exhibits a rectification ratio of 103 at zero gate voltage. These satisfactory p-type semiconductor properties demonstrate that ultrathin GeTe exhibits enormous potential for applications in optoelectronic interconnection circuits.
Collapse
Affiliation(s)
- Junyu Qu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Haodong Cheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huiping Lan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Biyuan Zheng
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziyu Luo
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Yi
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guangcheng Wu
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, P. R. China
| |
Collapse
|
3
|
Jiang Z, Li E, Shi R, Feng B, Chen JL, Peng Y, Liu C, Miao L. Effective Nonstoichiometric Strategy Combined Post-annealing Process for Boosting Thermoelectric Properties in n-Type PbTe. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19048-19056. [PMID: 38578807 DOI: 10.1021/acsami.4c03051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/07/2024]
Abstract
The intrinsic low electrical properties have hindered the enhancement of thermoelectric performance for n-type PbTe over a long period of time, primarily due to the generation of intrinsic Pb vacancies and other defects. In this work, PbTe samples with nonstoichiometric excess Pb atoms were successfully prepared by a melting reaction followed by spark plasma sintering. First, the introduction of precisely controlled excess Pb atoms has effectively eliminated the typical p-n transition phenomenon in PbTe systems by suppressing the generation of Pb vacancies. Further, the vacuum annealing process employed in nonstoichiometric samples increases the carrier mobility significantly because of the improved crystallinity and the lowered holes. Thus, the Hall mobility was optimized from 754.3 to 1215.9 cm2 V-1 s-1, while the power factor was ultimately elevated from 3087.8 to 4565.7 μW m-1 K-2 for the Pb1.03Te sample at 323 K. Benefited from the enhanced electrical transport properties near room temperature, an average zT ∼ 1.03 ranging from 323 to 723 K was achieved, demonstrating an outstanding performance in n-type nondoped PbTe. This work provides guidance for optimizing the thermoelectric performance of n-type PbTe and relevant telluride by reducing vacancies and other defects.
Collapse
Affiliation(s)
- Zexin Jiang
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Enliang Li
- China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
| | - Runze Shi
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Baoquan Feng
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Jun-Liang Chen
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Ying Peng
- Guangxi Key Laboratory of Precision Navigation Technology and Application, School of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China
| | - Chengyan Liu
- Guangxi Key Laboratory of Information Materials, Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Lei Miao
- Guangxi Key Laboratory for Relativity Astrophysics, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| |
Collapse
|
4
|
Guan QL, Dong LQ, Hao Q. Improved Thermoelectric Performance of Sb 2Te 3 Nanosheets by Coating Pt Particles in Wide Medium-Temperature Zone. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6961. [PMID: 37959558 PMCID: PMC10647828 DOI: 10.3390/ma16216961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 10/22/2023] [Accepted: 10/26/2023] [Indexed: 11/15/2023]
Abstract
The p-type Sb2Te3 alloy, a binary compound belonging to the V2VI3-based materials, has been widely used as a commercial material in the room-temperature zone. However, its low thermoelectric performance hinders its application in the low-medium temperature range. In this study, we prepared Sb2Te3 nanosheets coated with nanometer-sized Pt particles using a combination of solvothermal and photo-reduction methods. Our findings demonstrate that despite the adverse effects on certain properties, the addition of Pt particles to Sb2Te3 significantly improves the thermoelectric properties, primarily due to the enhanced electronic conductivity. The optimal ZT value reached 1.67 at 573 K for Sb2Te3 coated with 0.2 wt% Pt particles, and it remained above 1.0 within the temperature range of 333-573 K. These values represent a 47% and 49% increase, respectively, compared to the pure Sb2Te3 matrix. This enhancement in thermoelectric performance can be attributed to the presence of Pt metal particles, which effectively enhance carrier and phonon transport properties. Additionally, we conducted a Density Functional Theory (DFT) study to gain further insights into the underlying mechanisms. The results revealed that Sb2Te3 doped with Pt exhibited a doping level in the band structure, and a sharp rise in the Density of States (DOS) was observed. This sharp rise can be attributed to the presence of Pt atoms, which lead to enhanced electronic conductivity. In conclusion, our findings demonstrate that the incorporation of nanometer-sized Pt particles effectively improves the carrier and phonon transport properties of the Sb2Te3 alloy. This makes it a promising candidate for medium-temperature thermoelectric applications, as evidenced by the significant enhancement in thermoelectric performance achieved in this study.
Collapse
Affiliation(s)
- Qing-Ling Guan
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
- Beijing Institute of Technology, Yangtze Delta Region Academy, Jiaxing 314019, China
| | - Li-Quan Dong
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
- Beijing Institute of Technology, Yangtze Delta Region Academy, Jiaxing 314019, China
| | - Qun Hao
- Beijing Institute of Technology, School of Optics & Photonics, Beijing Key Laboratory Precise Optoelectronics Measurement Institute, Beijing 100081, China; (Q.-L.G.); (Q.H.)
| |
Collapse
|
5
|
Lv F, Zhong Y, Zhao X, An X, Deng Q, Gan L, Lin L, Ang R. Lead Vacancy Promotes Sodium Solubility to Achieve Ultra-High zT in Only Ternary Pb 1- x Na x Te. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301352. [PMID: 36864574 DOI: 10.1002/smll.202301352] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Indexed: 06/02/2023]
Abstract
Chemical doping of sodium is an indispensable means to optimize thermoelectric properties of PbTe materials, while a bottleneck is that an aliovalent atom doping leads to spontaneous intrinsic defects in the PbTe matrix, resulting in low dopant solubility. Therefore, it is urgent to improve the doping efficiency of Na for maximizing optimization. Here, an amazing new insight that the intentionally introduced Pb vacancies can promote Na solubility in ternary Pb1- x Nax Te is reported. Experimental analysis and theoretical calculations provide new insights into the inherent mechanism of the enhancement of Na solubility. The Pb vacancies and the resultant more dissolved Na not only synergistically optimize the carrier concentration and further facilitate the band convergence, but also induce a large number of dense dislocations in the grains. Consequently, benefiting from the self-enhancement of Seebeck coefficient and the minimization of lattice thermal conductivity, an 18% growth is obtained for the figure of merit zT in vacancy-containing Pb0.95 Na0.04 Te sample, reaching maximum zTmax ≈ 2.0 at 823 K, which achieves an ultra-high performance in only Na-doped ternary Pb1- x Nax Te materials. The strategy utilized here provides a novel route to optimize PbTe materials and represents an important step forward in manipulating thermoelectrics to improve dopant solubility.
Collapse
Affiliation(s)
- Fangling Lv
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Yan Zhong
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Xiang An
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Qian Deng
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Lin Gan
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Liwei Lin
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, P. R. China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu, 610065, P. R. China
| |
Collapse
|
6
|
Wang W, Bo L, Zhu J, Zhao D. Copper-Based Diamond-like Thermoelectric Compounds: Looking Back and Stepping Forward. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16093512. [PMID: 37176394 PMCID: PMC10180055 DOI: 10.3390/ma16093512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 04/13/2023] [Accepted: 05/01/2023] [Indexed: 05/15/2023]
Abstract
The research on thermoelectric (TE) materials has a long history. Holding the advantages of high elemental abundance, lead-free and easily tunable transport properties, copper-based diamond-like (CBDL) thermoelectric compounds have attracted extensive attention from the thermoelectric community. The CBDL compounds contain a large number of representative candidates for thermoelectric applications, such as CuInGa2, Cu2GeSe3, Cu3SbSe4, Cu12SbSe13, etc. In this study, the structure characteristics and TE performances of typical CBDLs were briefly summarized. Several common synthesis technologies and effective strategies to improve the thermoelectric performances of CBDL compounds were introduced. In addition, the latest developments in thermoelectric devices based on CBDL compounds were discussed. Further developments and prospects for exploring high-performance copper-based diamond-like thermoelectric materials and devices were also presented at the end.
Collapse
Affiliation(s)
- Wenying Wang
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Lin Bo
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Junliang Zhu
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Degang Zhao
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| |
Collapse
|
7
|
Zhang H, Zhang Y, Chen C, Yu P, Wang LM, Li G. High-Conductivity Chalcogenide Glasses in Ag-Ga 2Te 3-SnTe Systems and Their Suitability as Thermoelectric Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19170-19177. [PMID: 37016789 DOI: 10.1021/acsami.3c00532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
A novel high-conductivity Agx[(Ga2Te3)34(SnTe)66]100-x tellurium-based glassy system was fabricated via melt spinning with the glass formation area in the range of x = 0-15 mol %. A bulk Ag10[(Ga2Te3)34(SnTe)66]90 glass (A10) was obtained via spark plasma sintering at 450 K using a 5 min dwell time and 400 MPa pressure. The fabricated A10 glass exhibited higher room-temperature conductivity (σ300 K = 46 S m-1), larger glass transition temperature (Tg = 482 K), and ultralower thermal conductivity (∼0.19 W m-1 K-1) compared to those of previously reported Cu-Ge-Te, Cu-As-Te, Cu-Ge-As-Te, and Cu-As-Se-Te glassy systems with the approximate doping concentrations of 5-20%, demonstrating that this distinctive Ag-Ga2Te3-SnTe system is interesting materials for thermoelectric applications. The high-conductivity Ag-Ga2Te3-SnTe glassy system will extend investigations into similar glassy semiconductors and also can be used for preparing glass ceramics with potential applications in other fields.
Collapse
Affiliation(s)
- Huan Zhang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Yaqi Zhang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
- School of Mechanical and Electrical Engineering, Henan Institute of Science and Technology, Xinxiang 453003, P. R. China
| | - Chen Chen
- School of Physical Sciences, Great Bay University, Dongguan, Guangdong 523000, P. R. China
| | - Pengfei Yu
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Li-Min Wang
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| | - Gong Li
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, P. R. China
| |
Collapse
|
8
|
Sousa V, Sarkar A, Lebedev OI, Candolfi C, Lenoir B, Coelho R, Gonçalves AP, Vieira EMF, Alpuim P, Kovnir K, Kolen'ko YV. Large-Scale Colloidal Synthesis of Chalcogenides for Thermoelectric Applications. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15498-15508. [PMID: 36940316 DOI: 10.1021/acsami.2c23247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A simple and effective preparation of solution-processed chalcogenide thermoelectric materials is described. First, PbTe, PbSe, and SnSe were prepared by gram-scale colloidal synthesis relying on the reaction between metal acetates and diphenyl dichalcogenides in hexadecylamine solvent. The resultant phase-pure chalcogenides consist of highly crystalline and defect-free particles with distinct cubic-, tetrapod-, and rod-like morphologies. The powdered PbTe, PbSe, and SnSe products were subjected to densification by spark plasma sintering (SPS), affording dense pellets of the respective chalcogenides. Scanning electron microscopy shows that the SPS-derived pellets exhibit fine nano-/micro-structures dictated by the original morphology of the key constituting particles, while the powder X-ray diffraction and electron microscopy analyses confirm that the SPS-derived pellets are phase-pure materials, preserving the structure of the colloidal synthesis products. The resultant solution-processed PbTe, PbSe, and SnSe exhibit low thermal conductivity, which might be due to the enhanced phonon scattering developed over fine microstructures. For undoped n-type PbTe and p-type SnSe samples, an expected moderate thermoelectric performance is achieved. In contrast, an outstanding figure-of-merit of 0.73 at 673 K was achieved for undoped n-type PbSe outperforming, the majority of the optimized PbSe-based thermoelectric materials. Overall, our findings facilitate the design of efficient solution-processed chalcogenide thermoelectrics.
Collapse
Affiliation(s)
- Viviana Sousa
- Center of Physics of the Universities of Minho and Porto, University of Minho, Braga 4710-057, Portugal
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
| | - Arka Sarkar
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Oleg I Lebedev
- Laboratoire CRISMAT, UMR 6508, CNRS-ENSICAEN, Caen 14050, France
| | - Christophe Candolfi
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 2 Allée André Guinier-Campus ARTEM, BP 50840, CEDEX, Nancy 54011, France
| | - Bertrand Lenoir
- Institut Jean Lamour, UMR 7198 CNRS-Université de Lorraine, 2 Allée André Guinier-Campus ARTEM, BP 50840, CEDEX, Nancy 54011, France
| | - Rodrigo Coelho
- Centro de Ciências e Tecnologias Nucleares (C2TN), Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, Bobadela LRS 2695-066, Portugal
| | - António P Gonçalves
- Centro de Ciências e Tecnologias Nucleares (C2TN), Departamento de Engenharia e Ciências Nucleares, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, Bobadela LRS 2695-066, Portugal
| | - Eliana M F Vieira
- CMEMS─UMinho, University of Minho, Guimarães 4800-058, Portugal
- LABBELS─Associate Laboratory, Braga/Guimarães, Portugal
| | - Pedro Alpuim
- Center of Physics of the Universities of Minho and Porto, University of Minho, Braga 4710-057, Portugal
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
| | - Kirill Kovnir
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, U.S. Department of Energy, Ames, Iowa 50011, United States
| | - Yury V Kolen'ko
- Nanochemistry Research Group, International Iberian Nanotechnology Laboratory, Braga 4715-330, Portugal
| |
Collapse
|
9
|
Le W, Yang W, Sheng W, Shuai J. Research Progress of Interfacial Design between Thermoelectric Materials and Electrode Materials. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12611-12621. [PMID: 36856515 DOI: 10.1021/acsami.2c21035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Intensive efforts have been conducted to realize the reliable interfacial joining of thermoelectric materials and electrode materials with low interfacial contact resistance, which is an essential step to make thermoelectric materials into thermoelectric devices for industrial application. In this review, the roles of structural integrity, interdiffusion, and contact resistance in long-term reliabilities of thermoelectric modules are outlined first. Then interfacial reactions of near-room-temperature Bi2Te3-based thermoelectric materials and various electrode materials are reviewed comprehensively. We also summarized the joining behavior of the mid-temperature PbTe-based thermoelectric materials and commonly used electrode materials. Subsequently, for other thermoelectric materials systems, i.e., SiGe, CoSb3, and Mg3Sb2, previous attempts to join with some electrode materials are also recapitulated. Finally, some future prospects to further improve the joint reliability in thermoelectric device manufacturing are proposed. We believe that this review will provide guidance for preparing thermoelectric devices and optimizing thermoelectric device design.
Collapse
Affiliation(s)
- Wenkai Le
- School of Materials, Sun Yat-sen University, Shenzhen 518107, People's Republic of China
| | - Wenwei Yang
- School of Materials, Sun Yat-sen University, Shenzhen 518107, People's Republic of China
| | - Wenwen Sheng
- School of Materials, Sun Yat-sen University, Shenzhen 518107, People's Republic of China
| | - Jing Shuai
- School of Materials, Sun Yat-sen University, Shenzhen 518107, People's Republic of China
| |
Collapse
|
10
|
Wang B, Zhao H, Zhang B, Wang D, Song A, Chen C, Yu F, Hu W, Yu D, Xu B, Tian Y. Enhanced Thermoelectric Performance of n-Type PbTe via Carrier Concentration Optimization over a Broad Temperature Range. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36892868 DOI: 10.1021/acsami.3c00465] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The optimal carrier concentration of thermoelectric materials increases with increasing temperature. However, conventional aliovalent doping usually provides an approximately constant carrier concentration over the whole temperature range, which can only match the optimal carrier concentration in a narrow temperature range. In this work, n-type indium and aluminum codoped PbTe were prepared with high-pressure synthesis, followed by spark plasma sintering. While Al doping can provide a roughly constant carrier concentration with varying temperatures, In doping can trap electrons at low temperatures and release them at high temperatures, thus optimizing the carrier concentration over a broad temperature range. As a result, both electrical transport properties and thermal conductivity are optimized, and a significantly enhanced thermoelectric performance is achieved in InxAl0.02Pb0.98Te. The optimal In0.008Al0.02Pb0.98Te shows a peak ZT of 1.3 and an average ZT of 1, with a decent conversion efficiency of 14%. Current work demonstrates that optimizing carrier concentration with varying temperatures is effective to enhance the thermoelectric performance of n-type PbTe.
Collapse
Affiliation(s)
- Binhao Wang
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Haidong Zhao
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Bin Zhang
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Dan Wang
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Aihua Song
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Chen Chen
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Fengrong Yu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Wentao Hu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Dongli Yu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Bo Xu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| | - Yongjun Tian
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, Hebei, China
| |
Collapse
|
11
|
Chauhan NS, Ono I, Hayashi K, Miyazaki Y. Relevance of Solidification Kinetics for Enhanced Thermoelectric Performance in Al-Doped Higher Manganese Silicides. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51983-51993. [PMID: 36370384 DOI: 10.1021/acsami.2c16107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The solidification kinetics of an alloy from its liquid state forms an underlying basis for microstructural engineering, wherein the state of thermodynamic equilibrium associated with the melt-grown crystal and the quenched amorphous solid denotes the two limits for crystallinity in the alloy synthesis. In this study, we report the implication of the crystalline state on the thermal and electrical transport properties of partially substituted Mn(Si1-xAlx)γ by comparing the single crystals melt-grown by the Bridgman method, and polycrystals synthesized from melt spinning (MS) and subsequent spark plasma sintering (SPS). The rapidly solidified alloys exhibited nanocrystalline microstructures in MS ribbons, while melt-grown single crystals displayed characteristics evolution of MnSi striations with limited solubility of Al. It was observed that Al as a p-type dopant enhances the carrier concentration and electrical conductivity, while nanocrystallinity in MS + SPS polycrystals and secondary phases in monocrystals were effective in enhancing the phonon scattering. Maximum zT values of ∼0.54 (±0.05) at 823 K and 0.75 (±0.05) at 873 K were attained for the single crystal (directed perpendicular to the c-axis) and melt-spun polycrystals (along the in-plane direction), respectively. These results present the efficacy of aliovalent Al substitution and demonstrate the critical role of the solidification kinetics in optimizing the carrier concentration and enhancing the phonon scattering in higher manganese silicide crystals for thermoelectric applications.
Collapse
Affiliation(s)
- Nagendra S Chauhan
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai980-8579, Miyagi, Japan
| | - Ichiro Ono
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai980-8579, Miyagi, Japan
| | - Kei Hayashi
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai980-8579, Miyagi, Japan
| | - Yuzuru Miyazaki
- Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai980-8579, Miyagi, Japan
| |
Collapse
|
12
|
Jen I, Wang K, Wu H. Aliovalent Dilute Doping and Nano-Moiré Fringe Advance the Structural Stability and Thermoelectric Performance in β-Zn 4Sb 3. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:2201802. [PMID: 36177250 PMCID: PMC9475506 DOI: 10.1002/advs.202201802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 05/19/2022] [Indexed: 06/16/2023]
Abstract
Thermoelectric (TE) generators have come a long way since the first commercial apparatus launched in the 1950s. Since then, the β-Zn4Sb3 has manifested its potential as a cost-effective and environmentally friendly TE generator compared with the tellurium-bearing TE materials. Although the β-Zn4Sb3 features an intrinsically low thermal conductivity κ, it suffers from a long-lasting structural instability issue arising from the highly mobile zinc ions. Herein, the dilute Ga dopant gives rise to the aliovalent substitution, lowers the mobile zinc ions, and optimizes the hole carrier concentration n H simultaneously. Meanwhile, the formation of nano-moiré fringes suggests the modulated distribution of point defect that results from soluble Ga in a β-Zn4Sb3 lattice, which elicits an ultralow lattice thermal conductivity κ L = 0.2 W m-1 K-1 in a (Zn0.992Ga0.008)4Sb3 alloy. Hence, a fully dense β-Zn4Sb3 incorporated with the dilute Ga doping reveals superior structural stability with a peak zT > 1.4 at 623 K. In this work, the aliovalent dilute doping coupled with phase diagram engineering optimizes the fluxes of moving electrons and charged ions, which stabilizes the single-phase β-Zn4Sb3 while boosting the TE performance at the mid-temperature region. The synergistic strategies endow the ionic crystals with a thermodynamic route, which opens up a new category for high-performance and thermal robust TE alloys.
Collapse
Affiliation(s)
- I‐Lun Jen
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Kuang‐Kuo Wang
- Department of Materials and Optoelectronic ScienceNational Sun Yat‐sen UniversityKaohsiung80424Taiwan
| | - Hsin‐Jay Wu
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| |
Collapse
|
13
|
Abstract
Wearable thermoelectric generators (WTEGs) can incessantly convert body heat into electricity to power electronics. However, the low efficiency of thermoelectric materials, tiny terminal temperature difference, rigidity, and neglecting optimization of lateral heat transfer preclude WTEGs from broad utilization. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of flexibility and high normalized power density in thermoelectric generators by establishing the links among materials, TE performance, and advanced design of WTEGs (structure, heatsinks, thermal regulation, thermal analysis, etc.) based on inorganic bulk TE materials. Each section starts with a concise summary of its fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of wearable thermoelectric devices and potential applications. Overall, this review will serve to help materials scientists, electronic engineers, particularly students and young researchers, in selecting suitable thermoelectric devices and potential applications.
Collapse
|
14
|
Jiang Y, Weng T, Lin C, Jiao Y, Guo K, Wang D, Dong C, Zhang J, Luo J. The charge localization deteriorating the thermoelectric properties: The case of kiddcreekite-type Cu6WSnSe8. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
|
15
|
Mitobe T, Hoshi K, Kasem MR, Kiyama R, Usui H, Yamashita A, Higashinaka R, Matsuda TD, Aoki Y, Katase T, Goto Y, Mizuguchi Y. Superconductivity in In-doped AgSnBiTe 3 with possible band inversion. Sci Rep 2021; 11:22885. [PMID: 34819583 PMCID: PMC8613227 DOI: 10.1038/s41598-021-02341-9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Accepted: 11/08/2021] [Indexed: 11/09/2022] Open
Abstract
We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band inversion and topologically preserved electronic states. To explore new superconducting phases related to the topological electronic states, we investigated the In-doping effects on structural and superconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe, single-phase polycrystalline samples were obtained for y = 0-0.5 by high-pressure synthesis. Superconductivity was observed for y = 0.2-0.5. For y = 0.4, the transition temperature estimated from zero-resistivity state was 2.4 K, and the specific heat investigation confirmed the emergence of bulk superconductivity. Because the presence of band inversion was theoretically predicted, and the parameters obtained from specific heat analyses were comparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other (Ag, In, Sn, Bi)Te phases are candidate systems for studying topological superconductivity.
Collapse
Affiliation(s)
- Tsubasa Mitobe
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Kazuhisa Hoshi
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Md Riad Kasem
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Ryosuke Kiyama
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Hidetomo Usui
- Department of Physics and Materials Science, Shimane University, 1060, Nishikawatsucho, Matsue, 690-8504, Japan
| | - Aichi Yamashita
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Ryuji Higashinaka
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Tatsuma D Matsuda
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Yuji Aoki
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Takayoshi Katase
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan
| | - Yosuke Goto
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan
| | - Yoshikazu Mizuguchi
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-osawa, Hachioji, 192-0397, Japan.
| |
Collapse
|
16
|
Zhong Y, Liu H, Deng Q, Lv F, Gan L, Ang R. Enhancing Thermoelectrics for Small-Bandwidth n-Type PbTe-MnTe Alloys via Balancing Compromise. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52802-52810. [PMID: 34699168 DOI: 10.1021/acsami.1c17254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Small-bandwidth n-type PbTe-MnTe alloys effectively modify the valley shape, while it also inevitably aggravates the deterioration of carrier mobility as nonpolar phonons dominate the scattering. It is found that a trace amount of Cu doping can alleviate the compromises among thermoelectric parameters, thereby significantly optimizing the electrical-transport performance near room temperature of n-type PbTe-MnTe alloys. The single-Kane model reveals that the physical origin of performance improvement lies in the carrier mobility enhancement and self-optimization of carrier concentration. The Debye-Callaway model further quantifies the contribution of copper defect scattering to the lattice thermal conductivity. Notably, the high thermoelectric quality factor obtained in this work rationalizes their superior properties and reveals immense potential for achieving higher zT. Herein, an extremely high zT of ∼0.52 at room temperature and a maximum zTmax of ∼1.2 at 823 K are achieved in 0.3% Cu-intercalated n-type PbTe-MnTe. The mechanism in balancing compromise elaborated in principle contributes to an improvement of thermoelectric properties of the n-type PbTe alloys in a broad temperature range.
Collapse
Affiliation(s)
- Yan Zhong
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Hangtian Liu
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Qian Deng
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Fangling Lv
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Lin Gan
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China
| |
Collapse
|
17
|
Cao Y, Bai H, Li Z, Zhang Z, Tang Y, Su X, Wu J, Tang X. Zn-Induced Defect Complexity for the High Thermoelectric Performance of n-Type PbTe Compounds. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43134-43143. [PMID: 34479449 DOI: 10.1021/acsami.1c14518] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Although defect engineering is the core strategy to improve thermoelectric properties, there are limited methods to effectively modulate the designed defects. Herein, we demonstrate that a high ZT value of 1.36 at 775 K and a high average ZT value of 0.99 in the temperature range from 300 to 825 K are realized in Zn-containing PbTe by designing complex defects. By combining first-principles calculations and experiments, we show that Zn atoms occupy both Pb sites and interstitial sites in PbTe and couple with each other. The contraction stress induced via substitutional Zn on Pb sites alleviates the swelling stress by Zn atoms occupying the interstitial sites and promotes the solubility of interstitial Zn atoms in the structure of PbTe. The stabilization of Zn impurity as a complex defect extends the region of PbTe phase stability toward Pb0.995Zn0.02Te, while the solid solution region in the other direction of the ternary phase diagram is much smaller. The evolution of defects in PbTe was further explicitly corroborated by aberration-corrected scanning transmission electron microscopy (Cs-corrected STEM) and positron annihilation measurement. The Zn atoms compensate the Pb vacancies (VPb) and Zn interstitials (Zni) significantly improve the electron concentration, producing a high carrier mobility of 1467.7 cm2 V-1 s-1 for the Pb0.995Zn0.02Te sample. A high power factor of 4.11 mW m-1 K-2 is achieved for the Pb0.995Zn0.02Te sample at 306 K. This work provides new insights into understanding the nature and evolution of the defects in n-type PbTe as well as improving the electronic and thermal transport properties toward higher thermoelectric performance.
Collapse
Affiliation(s)
- Yu Cao
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hui Bai
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Zhi Li
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Department of Chemistry, Northwestern University, Evanston, Illinois 60201, United States
| | - Zhengkai Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yingfei Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
- Nanostructure Research Center, Wuhan University of Technology, Wuhan 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| |
Collapse
|
18
|
Zhang M, Tang G, Li Y. Hydrostatic Pressure Tuning of Thermal Conductivity for PbTe and PbSe Considering Pressure-Induced Phase Transitions. ACS OMEGA 2021; 6:3980-3990. [PMID: 33585775 PMCID: PMC7876854 DOI: 10.1021/acsomega.0c05907] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2020] [Accepted: 01/18/2021] [Indexed: 05/08/2023]
Abstract
Flexibly modulating thermal conductivity is of great significance to improve the application potential of materials. PbTe and PbSe are promising thermoelectric materials with pressure-induced phase transitions. Herein, the lattice thermal conductivities of PbTe and PbSe are investigated as a function of hydrostatic pressure by first-principles calculations. The thermal conductivities of both PbTe and PbSe in NaCl phase and Pnma phase exhibit complex pressure-dependence, which is mainly ascribed to the nonmonotonic variation of a phonon lifetime. In addition, the thermal transport properties of the Pnma phase behave anisotropically. The thermal conductivity of Pnma-PbTe is reduced below 1.1 W/m·K along the c-axis direction at 7-12 GPa. The mean free path for 50% cumulative thermal conductivity increases from 7 nm for NaCl-PbSe at 0 GPa to 47 nm for the Pnma-PbSe in the a-axis direction at 7 GPa, making it convenient for further thermal conductivity reduction by nanostructuring. The thermal conductivities of Pnma-PbTe in the c-axis direction and Pnma-PbSe in the a-axis direction are extremely low and hypersensitive to the nanostructure, showing important potential in thermoelectric applications. This work provides a comprehensive understanding of phonon behaviors to tune the thermal conductivity of PbTe and PbSe by hydrostatic pressure.
Collapse
Affiliation(s)
- Min Zhang
- MOE Key Laboratory of Thermo-Fluid
Science and Engineering, School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Guihua Tang
- MOE Key Laboratory of Thermo-Fluid
Science and Engineering, School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| | - Yifei Li
- MOE Key Laboratory of Thermo-Fluid
Science and Engineering, School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049, China
| |
Collapse
|