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Zhu J, Hu S, Chen B, Wei S, Zhang Y, Wu X, Zou X, Lu X, Sun Q, Zhang DW, Ji L. Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation. J Chem Phys 2024; 160:044706. [PMID: 38270240 DOI: 10.1063/5.0188101] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Accepted: 01/05/2024] [Indexed: 01/26/2024] Open
Abstract
Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.
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Affiliation(s)
- Jiyuan Zhu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
| | - Bojia Chen
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shice Wei
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xuefeng Wu
- Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel, Shanghai Key Laboratory of Advanced Ferrometallurgy, and School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Qingqing Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Li Ji
- School of Microelectronics, Fudan University, Shanghai 200433, China
- Jiashan Fudan Institute, Jiashan 314100, China
- Hubei Yangtz Memory Laboratories, Wuhan 430205, China
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Kim S, Yoo H. Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers. MICROMACHINES 2021; 12:mi12050565. [PMID: 34067620 PMCID: PMC8155888 DOI: 10.3390/mi12050565] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Revised: 05/11/2021] [Accepted: 05/14/2021] [Indexed: 11/19/2022]
Abstract
Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.
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