1
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Lai BR, Chen KT, Chaurasiya R, You SX, Hsu WD, Chen JS. Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis. NANOSCALE 2024; 16:3061-3070. [PMID: 38240625 DOI: 10.1039/d3nr05401b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC). These characteristics are validated using a compact model to account for resistive switching (RS) via the dynamic evolution of the internal state variable and the relocation of oxygen vacancies. Mathematically, the transient current response can be quantitatively described according to a simple set of equations to correlate the theoretical framework with experimental results. Furthermore, the device shows significant reliability and ability to distinguish 4-bit inputs and four diverse neural firing patterns. Therefore, this work shows the feasibility of implementing physical reservoirs in hardware and advances the understanding of the dynamic response.
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Affiliation(s)
- Bo-Ru Lai
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Rajneesh Chaurasiya
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
- Department of Electronics and Communication Engineering, Amrita School of Engineering, Amrita Vishwa Vidyapeetham, Chennai, India
| | - Song-Xian You
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Wen-Dung Hsu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
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2
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Khalid MA, Mubeen M, Mukhtar M, Siddique Z, Sumreen P, Aydın F, Asil D, Iqbal A. Probing the Förster Resonance Energy Transfer Dynamics in Colloidal Donor-Acceptor Quantum Dots Assemblies. J Fluoresc 2023; 33:2523-2529. [PMID: 37314535 DOI: 10.1007/s10895-023-03301-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Accepted: 06/05/2023] [Indexed: 06/15/2023]
Abstract
In this article, we report the synthesis of graphene quantum dots (GQDs) by hydrothermal method and surface modified CdS quantum dots (QDs) via the colloidal method and the fabrication of their dyad. The CdS QDs functionalized by mercaptoacetic acid (MAA) attach to the GQDs via electrostatic interactions. Spectral overlapping between the emission spectrum of GQDs and the absorption spectrum of CdS QDs allows efficient Förster resonance energy transfer (FRET) from GQDs to the CdS QDs in the GQDs-CdS QDs dyads. The magnitude of FRET efficiency (E) and the rate of energy transfer (kE) assessed by the photoluminescence (PL) decay kinetics are ~61.84% and ⁓3.8 × 108 s- 1, respectively. These high values of FRET efficiency and energy transfer rate can be assigned to the existence of strong electrostatic interactions between GQDs and CdS QDs, which arise due to the presence of polar functionalities on the surface of both GQDs and CdS QDs. The understanding of energy transfer in the luminescent donor-acceptor FRET system is of significant importance and the practical implications of such FRET systems could overall improve the efficiency of photovoltaics, sensing, imaging and optoelectronic devices.
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Affiliation(s)
- Muhammad Adnan Khalid
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan
- Department of Chemistry, Middle East Technical University, Ankara, 06800, Turkey
| | - Muhammad Mubeen
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan
| | - Maria Mukhtar
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan
| | - Zumaira Siddique
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan
| | - Poshmal Sumreen
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan
| | - Firdevs Aydın
- Department of Chemistry, Middle East Technical University, Ankara, 06800, Turkey
| | - Demet Asil
- Department of Chemistry, Middle East Technical University, Ankara, 06800, Turkey
| | - Azhar Iqbal
- Department of Chemistry, Quaid-I-Azam University, 45320, Islamabad, Pakistan.
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3
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Im MJ, Kim JI, Hyeong SK, Moon BJ, Bae S. From Pristine to Heteroatom-Doped Graphene Quantum Dots: An Essential Review and Prospects for Future Research. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304497. [PMID: 37496316 DOI: 10.1002/smll.202304497] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Indexed: 07/28/2023]
Abstract
Graphene quantum dots (GQDs) are carbon-based zero-dimensional materials that have received considerable scientific interest due to their exceptional optical, electrical, and optoelectrical properties. Their unique electronic band structures, influenced by quantum confinement and edge effects, differentiate the physical and optical characteristics of GQDs from other carbon nanostructures. Additionally, GQDs can be synthesized using various top-down and bottom-up approaches, distinguishing them from other carbon nanomaterials. This review discusses recent advancements in GQD research, focusing on their synthesis and functionalization for potential applications. Particularly, various methods for synthesizing functionalized GQDs using different doping routes are comprehensively reviewed. Based on previous reports, current challenges and future directions for GQDs research are discussed in detail herein.
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Affiliation(s)
- Min Ji Im
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju, Jeollabuk-do, 55324, Republic of Korea
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdan-gwagiro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Jin Il Kim
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju, Jeollabuk-do, 55324, Republic of Korea
| | - Seok-Ki Hyeong
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju, Jeollabuk-do, 55324, Republic of Korea
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, Republic of Korea
| | - Byung Joon Moon
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju, Jeollabuk-do, 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, Jeollabuk-do, 54896, Republic ofKorea
| | - Sukang Bae
- Functional Composite Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), 92 Chudong-ro, Bongdong-eup, Wanju, Jeollabuk-do, 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju, Jeollabuk-do, 54896, Republic ofKorea
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4
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Chen SF, Wu TS, Soo YL. Highly defective graphene quantum dots-doped 1T/2H-MoS 2 as an efficient composite catalyst for the hydrogen evolution reaction. Sci Rep 2023; 13:15184. [PMID: 37704697 PMCID: PMC10499812 DOI: 10.1038/s41598-023-42410-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 09/10/2023] [Indexed: 09/15/2023] Open
Abstract
We present a new composite catalyst system of highly defective graphene quantum dots (HDGQDs)-doped 1T/2H-MoS2 for efficient hydrogen evolution reactions (HER). The high electrocatalytic activity, represented by an overpotential of 136.9 mV and a Tafel slope of 57.1 mV/decade, is due to improved conductivity, a larger number of active sites in 1T-MoS2 compared to that in 2H-MoS2, and additional defects introduced by HDGQDs. High-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) were used to characterize both the 1T/2H-MoS2 and GQDs components while Fourier-transform infrared spectroscopy (FTIR) was employed to identify the functional groups on the edge and defect sites in the HDGQDs. The morphology of the composite catalyst was also examined by field emission scanning electron microscopy (FESEM). All experimental data demonstrated that each component contributes unique advantages that synergistically lead to the significantly improved electrocatalytic activity for HER in the composite catalyst system.
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Affiliation(s)
- Sheng-Fu Chen
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
| | - Tai-Sing Wu
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan.
| | - Yun-Liang Soo
- Department of Physics, National Tsing Hua University, Hsinchu, Taiwan.
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan.
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5
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Niu Y, Zhou X, Gao W, Fu M, Duan Y, Yao J, Wang B, Yang M, Zheng Z, Li J. Interfacial Engineering of In 2Se 3/h-BN/CsPb(Br/I) 3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System. ACS NANO 2023; 17:13760-13768. [PMID: 37428004 DOI: 10.1021/acsnano.3c03319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
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Affiliation(s)
- Yingying Niu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Maixia Fu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Yule Duan
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, PR China
| | - Bing Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, PR China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, PR China
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6
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Lin CY, Lee MP, Chang YM, Tseng YT, Yang FS, Li M, Chen JY, Chen CF, Tsai MY, Lin YC, Ueno K, Yamamoto M, Lo ST, Lien CH, Chiu PW, Tsukagoshi K, Wu WW, Lin YF. Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41156-41164. [PMID: 36037311 DOI: 10.1021/acsami.2c07679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe2 channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 103. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.
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Affiliation(s)
- Che-Yi Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Mu-Pai Lee
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yuan-Ming Chang
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Yi-Tang Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Feng-Shou Yang
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mengjiao Li
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Jiann-Yeu Chen
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
- Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan
| | - Ciao-Fen Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Meng-Yu Tsai
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chun Lin
- Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan
| | - Keiji Ueno
- Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
| | - Mahito Yamamoto
- Department of Pure and Applied Physics, Kansai University, Osaka 564-8680, Japan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chen-Hsin Lien
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Ibaraki, Japan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
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7
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Lin H, Zhang Z, Zhang H, Lin KT, Wen X, Liang Y, Fu Y, Lau AKT, Ma T, Qiu CW, Jia B. Engineering van der Waals Materials for Advanced Metaphotonics. Chem Rev 2022; 122:15204-15355. [PMID: 35749269 DOI: 10.1021/acs.chemrev.2c00048] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.
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Affiliation(s)
- Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Zhenfang Zhang
- School of Textile Science and Engineering, Xi'an Polytechnic University, Xi'an 710048, China
| | - Huihui Zhang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yao Liang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yang Fu
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Alan Kin Tak Lau
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Tianyi Ma
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
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8
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Liu X, Chen Z, Wang T, Jiang X, Qu X, Duan W, Xi F, He Z, Wu J. Tissue Imprinting on 2D Nanoflakes-Capped Silicon Nanowires for Lipidomic Mass Spectrometry Imaging and Cancer Diagnosis. ACS NANO 2022; 16:6916-6928. [PMID: 35416655 DOI: 10.1021/acsnano.2c02616] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Spatially resolved tissue lipidomics is essential for accurate intraoperative and postoperative cancer diagnosis by revealing molecular information in the tumor microenvironment. Matrix-free laser desorption ionization mass spectrometry imaging (LDI-MSI) is an emerging attractive technology for label-free visualization of metabolites distributions in biological specimens. However, the development of LDI-MSI technology that could conveniently and authentically reveal molecular distribution on tissue samples is still a challenge. Herein, we present a tissue imprinting technology by retaining tissue lipids on 2D nanoflakes-capped silicon nanowires (SiNWs) for further mass spectrometry imaging and cancer diagnosis. The 2D nanoflakes were prepared by liquid exfoliation of molybdenum disulfide (MoS2) with nitrogen-doped graphene quantum dots (NGQDs), which serve as both intercalation agent and dispersant. The obtained NGQD@MoS2 nanoflakes were then decorated on the tip of vertical SiNWs, forming a hybrid NGQD@MoS2/SiNWs nanostructure, which display excellent lipid extraction ability, enhanced LDI efficiency and molecule imaging capability. The peak number and total ion intensity of different lipids species on animal lung tissues obtained by tissue imprinting LDI-MSI on NGQD@MoS2/SiNWs were ∼4-5 times greater than those on SiNWs substrate. As a proof-of-concept demonstration, the NGQD@MoS2/SiNWs nanostructure was further applied to visualize phospholipids on sliced non small cell lung cancer (NSCLC) tissue along with the adjacent normal tissue. On the basis of selected feature lipids and machine learning algorithm, a prediction model was constructed to discriminate NSCLC tissues from the adjacent normal tissues with an accuracy of 100% for the discovery cohort and 91.7% for the independent validation cohort.
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Affiliation(s)
- Xingyue Liu
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
| | - Zhao Chen
- Department of Thoracic Surgery, Sir Run Run Shaw Hospital, School of Medicine, Zhejiang University, Hangzhou 310016, P. R. China
| | - Tao Wang
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
| | - Xinrong Jiang
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
| | - Xuetong Qu
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
| | - Wei Duan
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
| | - Fengna Xi
- Department of Chemistry, Key Laboratory of Surface & Interface Science of Polymer Materials of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China
| | - Zhengfu He
- Department of Thoracic Surgery, Sir Run Run Shaw Hospital, School of Medicine, Zhejiang University, Hangzhou 310016, P. R. China
| | - Jianmin Wu
- Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou 310058, P. R. China
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9
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Zeng G, Li XX, Li YC, Chen DB, Chen YC, Zhao XF, Chen N, Wang TY, Zhang DW, Lu HL. A Heterostructured Graphene Quantum Dots/β-Ga 2O 3 Solar-Blind Photodetector with Enhanced Photoresponsivity. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16846-16855. [PMID: 35363489 DOI: 10.1021/acsami.2c00671] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The superior optical and electronic characteristics of quasi-two-dimensional β-Ga2O3 make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga2O3 flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga2O3 heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 105 A/W), a large detectivity (D* of ∼4.3 × 1013 Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 108%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga2O3 PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga2O3 PD also exhibits better photoelectric performance than the bare β-Ga2O3 PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga2O3 DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.
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Affiliation(s)
- Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Ding-Bo Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xue-Feng Zhao
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Na Chen
- Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China
| | - Ting-Yun Wang
- Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
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10
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Low-Dimensional Layered Light-Sensitive Memristive Structures for Energy-Efficient Machine Vision. ELECTRONICS 2022. [DOI: 10.3390/electronics11040619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Layered two-dimensional (2D) and quasi-zero-dimensional (0D) materials effectively absorb radiation in the wide ultraviolet, visible, infrared, and terahertz ranges. Photomemristive structures made of such low-dimensional materials are of great interest for creating optoelectronic platforms for energy-efficient storage and processing of data and optical signals in real time. Here, photosensor and memristor structures based on graphene, graphene oxide, bismuth oxyselenide, and transition metal dichalcogenides are reviewed from the point of view of application in broadband image recognition in artificial intelligence systems for autonomous unmanned vehicles, as well as the compatibility of the formation of layered neuromorphic structures with CMOS technology.
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Sangam S, Jindal S, Agarwal A, Banerjee BD, Prasad P, Mukherjee M. Graphene quantum dots-porphyrins/phthalocyanines multifunctional hybrid systems: from interfacial dialogue to applications. Biomater Sci 2022; 10:1647-1679. [DOI: 10.1039/d2bm00016d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Engineered well-ordered hybrid nanomaterials are at a symbolically pivotal point, just ahead of a long-anticipated human race transformation. Incorporating newer carbon nanomaterials like graphene quantum dots (GQDs) with tetrapyrrolic porphyrins...
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12
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Li W, Jiang N, Wu B, Liu Y, Zhang L, He J. Chlorine Modulation Fluorescent Performance of Seaweed-Derived Graphene Quantum Dots for Long-Wavelength Excitation Cell-Imaging Application. Molecules 2021; 26:4994. [PMID: 34443582 PMCID: PMC8400823 DOI: 10.3390/molecules26164994] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2021] [Revised: 08/12/2021] [Accepted: 08/16/2021] [Indexed: 11/16/2022] Open
Abstract
Biological imaging is an essential means of disease diagnosis. However, semiconductor quantum dots that are used in bioimaging applications comprise toxic metal elements that are nonbiodegradable, causing serious environmental problems. Herein, we developed a novel ecofriendly solvothermal method that uses ethanol as a solvent and doping with chlorine atoms to prepare highly fluorescent graphene quantum dots (GQDs) from seaweed. The GQDs doped with chlorine atoms exhibit high-intensity white fluorescence. Thus, their preliminary application in bioimaging has been confirmed. In addition, clear cell imaging could be performed at an excitation wavelength of 633 nm.
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Affiliation(s)
- Weitao Li
- Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China; (N.J.); (L.Z.)
- Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, Shanghai 200444, China
| | - Ningjia Jiang
- Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China; (N.J.); (L.Z.)
| | - Bin Wu
- School of Life Science and Technology, Tongji University, Shanghai 200082, China
| | - Yuan Liu
- Anhui Institute of Metrology, Hefei 230051, China;
| | - Luoman Zhang
- Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China; (N.J.); (L.Z.)
| | - Jianxin He
- Textile and Garment Industry of Research Institute, Zhongyuan University of Technology, Zhengzhou 450007, China; (N.J.); (L.Z.)
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13
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Zhang Q, Ying H, Li X, Xiang R, Zheng Y, Wang H, Su J, Xu M, Zheng X, Maruyama S, Zhang X. Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31861-31869. [PMID: 34213304 DOI: 10.1021/acsami.1c07286] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS2 crystals through a single-step deposition method to improve the photodetection ability of MoS2 flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS2 lattice and the Sn dopant leads to an additional strain in the host lattice. The detection performance of Sn-doped MoS2 flakes exhibits an order of magnitude improvement (up to Rλ ≈ 29 A/W, EQE ≈ 7.8 × 103%, D* ≈ 1011 Jones@470 nm) as compared with that of pure MoS2 flakes, which is associated with electrons released from Sn atoms. Such a substitutional doping process in TMDs provides a potential platform to tune the on-demand properties of these 2D materials.
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Affiliation(s)
- Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Haoting Ying
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yongjia Zheng
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Hemiao Wang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Xuefeng Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
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14
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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James Singh K, Ahmed T, Gautam P, Sadhu AS, Lien DH, Chen SC, Chueh YL, Kuo HC. Recent Advances in Two-Dimensional Quantum Dots and Their Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1549. [PMID: 34208236 PMCID: PMC8230759 DOI: 10.3390/nano11061549] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Revised: 06/08/2021] [Accepted: 06/09/2021] [Indexed: 01/28/2023]
Abstract
Two-dimensional quantum dots have received a lot of attention in recent years due to their fascinating properties and widespread applications in sensors, batteries, white light-emitting diodes, photodetectors, phototransistors, etc. Atomically thin two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have sparked researchers' interest with their unique optical and electronic properties, such as a tunable energy bandgap, efficient electronic transport, and semiconducting characteristics. In this review, we provide in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications. This analysis will serve as a tipping point for learning about the recent breakthroughs in two-dimensional quantum dots and motivate more scientists and engineers to grasp two-dimensional quantum dots materials by incorporating them into a variety of electrical and optical fields.
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Affiliation(s)
- Konthoujam James Singh
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
| | - Tanveer Ahmed
- Department of Electrical Engineering and Computer Science, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (T.A.); (D.-H.L.)
| | - Prakalp Gautam
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
| | - Annada Sankar Sadhu
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
| | - Der-Hsien Lien
- Department of Electrical Engineering and Computer Science, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (T.A.); (D.-H.L.)
| | - Shih-Chen Chen
- Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
| | - Hao-Chung Kuo
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
- Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
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16
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Wan J, Huang J, Yu H, Liu L, Shi Y, Liu C. Fabrication of self-assembled 0D-2D Bi 2MoO 6-g-C 3N 4 photocatalytic composite membrane based on PDA intermediate coating with visible light self-cleaning performance. J Colloid Interface Sci 2021; 601:229-241. [PMID: 34082228 DOI: 10.1016/j.jcis.2021.05.038] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 05/06/2021] [Accepted: 05/07/2021] [Indexed: 11/29/2022]
Abstract
A Self-cleaning surface can efficaciously solve the problem of irreversible contamination buildup on filtration membranes. Photocatalytic membranes were fabricated via vacuum assisted layer-by-layer (LBL) self-assembly of 0D-2D Bi2MoO6-g-C3N4 on a PDA coated thin-film composite PVDF substrate by Schiff base reaction. The rejection rate of the simulated polysaccharide was more than 90%, and that of the simulated protein was more than 80%. The combination of the membrane and the photocatalyst promoted the degradation of tetracycline hydrochloride by the composite membrane to 67.85% when original membranes had minor effect. Under visible light, reversible radiation pollutants (Rr) gradually replaced irreversible pollutants (Rir) as the main pollutants. The flux recovery ratio (FRR) of 0D-2D Bi2MoO6-g-C3N4/PVDF membrane was 85% after being irradiated with visible light for 30 min. The flux recovery rate of contaminated photocatalytic membrane remained 75%, and the rejection was maintained in a stable range after four cycles of the cleaning operation under visible light. The results indicated that the excellent photocatalytic performance of 0D-2D Bi2MoO6-g-C3N4 photocatalysis material and the increase of multi-dimensional functional layer morphology on pollutant contact area improved the mechanical stability, interception performance and self-cleaning performance of the composite membrane. This work not only builds a new type of composite coating membranes, but also help us to further understand the relationship between the dimensions of photocatalytic materials and the improvement of photocatalytic membrane performance.
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Affiliation(s)
- Jia Wan
- College of Environmental Science and Engineering, Hunan University, Changsha 410082, PR China; Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha, Hunan 410082, PR China
| | - Jinhui Huang
- College of Environmental Science and Engineering, Hunan University, Changsha 410082, PR China; Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha, Hunan 410082, PR China.
| | - Hanbo Yu
- College of Environmental Science and Engineering, Hunan University, Changsha 410082, PR China; Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha, Hunan 410082, PR China
| | - Lishuo Liu
- College of Environmental Science and Engineering, Hunan University, Changsha 410082, PR China; Key Laboratory of Environmental Biology and Pollution Control, Hunan University, Ministry of Education, Changsha, Hunan 410082, PR China
| | - Yahui Shi
- College of Environmental Engineering, Henan University of Technology, Zhengzhou, Henan 450001, PR China; College of Environmental Science and Engineering, Hunan University, Changsha 410082, PR China
| | - Chunhua Liu
- School of Chemistry and Food Engineering, Changsha University of Science and Technology , Changsha 410004, Hunan, PR China
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