1
|
Mandal S, Ghosh A, Sarkar P. Understanding the origin of the high thermoelectric figure of merit of Zintl-phase KCaBi. Phys Chem Chem Phys 2024; 26:13198-13208. [PMID: 38630446 DOI: 10.1039/d4cp01093k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Herein, we have investigated the unexplored thermoelectric properties of Zintl-phase KCaBi using first-principles calculation and the solution of the Boltzmann transport equation. KCaBi shows intrinsically very low lattice thermal conductivities (κl) along the (x(y), and z)-directions of (1.78, 0.68) and (1.15, 0.43) W m-1 K-1 at 300 and 800 K, respectively. Along with the effect of very low κl, the high figure of merit (ZT) for p-type KCaBi results from the high Seebeck coefficients (S) and optimal electrical conductivities (σ), which originate from the high and steep total density of state (TDOS) at the valence band edge and the less dispersed multi-valley nature of the valence band edge in the band structure. On the other hand, large ZT for n-type KCaBi results from moderate S and high σ caused by the sloped TDOS at the conduction band edge and the highly dispersed nature of the conduction band edge in the band structure, and very low values of κl. The highest ZT of KCaBi that we obtained at 800 K along the (x(y), and z)-directions was (1.83, 0.80) for the p-type case at a hole concentration of 1021 cm-3 and (1.36, 1.22) for the n-type case at electron concentration 7 × 1018 cm-3. Our study demonstrates that both p-type and n-type KCaBi have the potential to be promising thermoelectric materials.
Collapse
Affiliation(s)
- Sampad Mandal
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
| | - Atish Ghosh
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
| | - Pranab Sarkar
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
| |
Collapse
|
2
|
Wu YL, Yang Q, Geng HY, Cheng Y. The thermoelectric properties of CdBr, CdI, and Janus Cd 2BrI monolayers with low lattice thermal conductivity. Phys Chem Chem Phys 2024; 26:6956-6966. [PMID: 38334722 DOI: 10.1039/d3cp05613a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
The investigation and development of high thermoelectric value materials has become a research hotspot in recent years. In this work, based on the density functional theory on the Perdew-Burke-Ernzerhof (GGA-PBE) level, the thermoelectric properties of transition metal halides CdBr, Janus Cd2BrI, and CdI monolayers have been systematically investigated using Boltzmann transport theory. The calculation of the electronic band structure shows that these three materials have indirect band gap semiconductor properties. For carrier transport, the electron mobilities for CdBr, Janus Cd2BrI, and CdI monolayers are found to be 74, 16, 21 cm2 s-1 V-1 for p-type doping and 116, 102, 78 cm2 s-1 V-1 for n-type doping. Regarding their phonon transport, the CdBr, Cd2BrI, and CdI monolayers all have very low lattice thermal conductivity (4.78, 2.46, and 1.65 W m-1 K-1, respectively) that decreases with increasing temperature, which is favorable for obtaining large zT values. The electrical transport results show that the performance of p-type doping is better than that of n-type doping. At 300 K, the Seebeck coefficients of p-type doping for the CdBr, Cd2BrI, and CdI monolayers are 217.72, 246.43, and 226.24 μV K-1, respectively. In addition, we predict that the zT values of the CdBr, Cd2BrI, and CdI monolayers are 0.62, 1.64, and 0.87 for p-type doping at 300 K respectively. The zT values increase with the increase of temperature. In particular, the Janus Cd2BrI monolayer has a zT value of 3.03 at 600 K. These results suggest that all these materials can be good candidates for thermoelectric materials.
Collapse
Affiliation(s)
- Yan-Ling Wu
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China.
| | - Qiu Yang
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China.
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China
| | - Yan Cheng
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China.
| |
Collapse
|
3
|
Xiong R, Chen X, Zhang Y, Cui Z, Wen J, Wen C, Wang J, Wu B, Sa B. Unraveling the Emerging Photocatalytic, Thermoelectric, and Topological Properties of Intercalated Architecture MZX (M = Ga and In; Z = Si, Ge and Sn; X = S, Se, and Te) Monolayers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:15837-15847. [PMID: 37877670 DOI: 10.1021/acs.langmuir.3c02636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
The continuous advancements in studying two-dimensional (2D) materials pave the way for groundbreaking innovations across various industries. In this study, by employing density functional theory calculations, we comprehensively elucidate the electronic structures of MZX (M = Ga and In; Z = Si, Ge, and Sn; X = S, Se, and Te) monolayers for their applications in photocatalytic, thermoelectric, and spintronic fields. Interestingly, GaSiS, GaSiSe, InSiS, and InSiSe monolayers are identified to be efficient photocatalysts for overall water splitting with band gaps close to 2.0 eV, suitable band edge positions, and excellent optical harvest ability. In addition, the InSiTe monolayer exhibits a ZT value of 1.87 at 700 K, making it highly appealing for applications in thermoelectric devices. It is further highlighted that GaSnTe, InSnS, and InSnSe monolayers are predicted to be 2D topological insulators (TIs) with bulk band gaps of 115, 54, and 152 meV, respectively. Current research expands the family of 2D GaGeTe materials and establishes a path toward the practical utilization of MZX monolayers in energy conversion and spintronic devices.
Collapse
Affiliation(s)
- Rui Xiong
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Xiangbin Chen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Yinggan Zhang
- College of Materials, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, P. R. China
| | - Zhou Cui
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Jiansen Wen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Cuilian Wen
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Jiong Wang
- Powder Metallurgy Research Institute, Central South University, Changsha 410083, P. R. China
| | - Bo Wu
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| | - Baisheng Sa
- Multiscale Computational Materials Facility, Institute of Material Genome Engineering, Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China
| |
Collapse
|
4
|
Jin D, Zhang P, Tian Z, Zhang Z, Yuan Y, Liu Y, Lu Z, Xiong R. The effect of four-phonon interaction on phonon thermal conductivity of hexagonal VTe 2 and puckered pentagonal VTe 2. Phys Chem Chem Phys 2023; 25:28669-28676. [PMID: 37849319 DOI: 10.1039/d3cp03218c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
The traditional view is that complex structures have lower lattice thermal conductivity. However, it is observed that complex structures have higher lattice thermal conductivity than simple atomic structures in VTe2 systems after considering the four-phonon scattering effect. In this work, we calculate the lattice thermal conductivity of an H-VTe2 monolayer with a simple atomic structure and that of a PP-VTe2 monolayer with a complex atomic arrangement using first-principles calculations combined with the Boltzmann transport theory under the conditions of with and without the four-phonon scattering process. Our findings reveal that the lattice thermal conductivity of the PP-VTe2 monolayer along the x or y direction is 3-4 times lower than that of the H-VTe2 monolayer when only considering the three-phonon scattering process. After taking into account the four-phonon scattering process, the lattice thermal conductivity of both monolayers decreases. For the H-VTe2 monolayer, the lattice thermal conductivity decreases by 88.7% (from 1.33 to 0.15 W m-1 K-1) compared to only considering the three-phonon scattering process, mainly due to strong four-phonon scattering. In addition, the PP-VTe2 monolayer experiences a lower decrease in lattice thermal conductivity, with reductions of 12.5% (from 0.4 to 0.35 W m-1 K-1) and 11.7% (from 0.34 to 0.3 W m-1 K-1) in the x and y directions, respectively, because of the weak four-phonon scattering. Notably, the lattice thermal conductivity with the four-phonon scattering process of the H-VTe2 monolayer is twice as low as that of the PP-VTe2 monolayer. Hence, our findings suggest that even simple atomic structures can exhibit lower lattice thermal conductivity than complex structures when considering four-phonon interaction.
Collapse
Affiliation(s)
- Dan Jin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Pan Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Zhixue Tian
- Hebei Key Laboratory of Photophysics Research and Application, College of Physics, Hebei Normal University, Shijiazhuang 050024, People's Republic of China
| | - Zhenhua Zhang
- School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Youyuan Yuan
- Wuhan Britain-China School, Wuhan 430030, People's Republic of China
| | - Yong Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Zhihong Lu
- School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Rui Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| |
Collapse
|
5
|
Yuan YX, Pan L, Wang ZQ, Zeng ZY, Geng HY, Chen XR. Two-dimensional Janus pentagonal MSeTe (M = Ni, Pd, Pt): promising water-splitting photocatalysts and optoelectronic materials. Phys Chem Chem Phys 2023; 25:26152-26163. [PMID: 37740346 DOI: 10.1039/d3cp02398b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
Inspired by the interesting and novel properties exhibited by Janus transition metal dichalcogenides (TMDs) and two-dimensional pentagonal structures, we here investigated the structural stability, mechanical, electronic, photocatalytic, and optical properties for a class of two-dimensional (2D) pentagonal Janus TMDs, namely penta-MSeTe (M = Ni, Pd, Pt) monolayers, by using density functional theory (DFT) combined with Hubbard's correction (U). Our results showed that these monolayers exhibit good structural stability, appropriate band structures for photocatalysts, high visible light absorption, and good photocatalytic applicability. The calculated electronic properties reveal that the penta-MSeTe are semiconductors with a bandgap range of 2.06-2.39 eV, and their band edge positions meet the requirements for water-splitting photocatalysts in various environments (pH = 0-13). We used stress engineering to seek higher solar-to-hydrogen (STH) efficiency in acidic (pH = 0), neutral (pH = 7) and alkaline (pH = 13) environments for penta-MSeTe from 0% to +8% biaxial and uniaxial strains. Our results showed that penta-PdSeTe stretched 8% along the y direction and demonstrates an STH efficiency of up to 29.71% when pH = 0, which breaks the theoretical limit of the conventional photocatalytic model. We also calculated the optical properties and found that they exhibit high absorption (13.11%) in the visible light range and possess a diverse range of hyperbolic regions. Hence, it is anticipated that penta-MSeTe materials hold great promise for applications in photocatalytic water splitting and optoelectronic devices.
Collapse
Affiliation(s)
- Yu-Xun Yuan
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Lu Pan
- College of Physics, Sichuan University, Chengdu 610064, China.
| | - Zhao-Qi Wang
- College of Science, Xi'an University of Science and Technology, Xi'an 710054, China.
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China
| | - Xiang-Rong Chen
- College of Physics, Sichuan University, Chengdu 610064, China.
| |
Collapse
|
6
|
Tien NT, Thao PTB, Dang NH, Khanh ND, Dien VK. Insights into Structural, Electronic, and Transport Properties of Pentagonal PdSe 2 Nanotubes Using First-Principles Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111728. [PMID: 37299633 DOI: 10.3390/nano13111728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 05/15/2023] [Accepted: 05/15/2023] [Indexed: 06/12/2023]
Abstract
One-dimensional (1D) novel pentagonal materials have gained significant attention as a new class of materials with unique properties that could influence future technologies. In this report, we studied the structural, electronic, and transport properties of 1D pentagonal PdSe2 nanotubes (p-PdSe2 NTs). The stability and electronic properties of p-PdSe2 NTs with different tube sizes and under uniaxial strain were investigated using density functional theory (DFT). The studied structures showed an indirect-to-direct bandgap transition with slight variation in the bandgap as the tube diameter increased. Specifically, (5 × 5) p-PdSe2 NT, (6 × 6) p-PdSe2 NT, (7 × 7) p-PdSe2 NT, and (8 × 8) p-PdSe2 NT are indirect bandgap semiconductors, while (9 × 9) p-PdSe2 NT exhibits a direct bandgap. In addition, under low uniaxial strain, the surveyed structures were stable and maintained the pentagonal ring structure. The structures were fragmented under tensile strain of 24%, and compression of -18% for sample (5 × 5) and -20% for sample (9 × 9). The electronic band structure and bandgap were strongly affected by uniaxial strain. The evolution of the bandgap vs. the strain was linear. The bandgap of p-PdSe2 NT experienced an indirect-direct-indirect or a direct-indirect-direct transition when axial strain was applied. A deformability effect in the current modulation was observed when the bias voltage ranged from about 1.4 to 2.0 V or from -1.2 to -2.0 V. Calculation of the field effect I-V characteristic showed that the on/off ratio was large with bias potentials from 1.5 to 2.0 V. This ratio increased when the inside of the nanotube contained a dielectric. The results of this investigation provide a better understanding of p-PdSe2 NTs, and open up potential applications in next-generation electronic devices and electromechanical sensors.
Collapse
Affiliation(s)
- Nguyen Thanh Tien
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
| | | | - Nguyen Hai Dang
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
- Faculty of Fundamental Science, Nam Can Tho University, Can Tho 90000, Vietnam
| | - Nguyen Duy Khanh
- High-Performance Computing Laboratory (HPC Lab), Information Technology Center, Thu Dau Mot University, Thu Dau Mot 75100, Vietnam
| | - Vo Khuong Dien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| |
Collapse
|
7
|
Jakhar M, Sharma R, Kumar A. Janus β-PdXY (X/Y = S, Se, Te) materials with high anisotropic thermoelectric performance. NANOSCALE 2023; 15:5964-5975. [PMID: 36891682 DOI: 10.1039/d2nr05483c] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention as emerging thermoelectric (TE) materials owing to their unique density of states (DOS) near the Fermi level. We investigate the TE performance of Janus β-PdXY (X/Y = S, Se, Te) monolayer materials as a function of carrier concentration and temperature in the mid-range from 300 to 800 K by combining density functional theory (DFT) and semi-classical Boltzmann transport theory. The phonon dispersion spectra and AIMD simulations confirm their thermal and dynamic stability. The transport calculation results reveal the highly anisotropic TE performance of both n and p-type Janus β-PdXY monolayers. Meanwhile, the coexistence of low phonon group velocity and a converged scattering rate leads to a lower lattice thermal conductivity (Kl) of 0.80 W mK-1, 0.94 W mK-1, and 0.77 W mK-1 along the y-direction for these Janus materials, while the high TE power factor is attributed to the high Seebeck coefficient (S) and electrical conductivity, which are due to the degenerate top valence bands of these Janus monolayers. The combination of lower Kl and a high-power factor at 300 K (800 K) leads to an optimal figure of merit (ZT) of 0.68 (2.21), 0.86 (4.09) and 0.68 (3.63) for p-type Janus PdSSe, PdSeTe and PdSTe monolayers, respectively. To evaluate rational electron transport properties, the effects of acoustic phonon scattering (τac), impurity scattering (τimp), and polarized phonon scattering (τpolar) are included in the temperature-dependent electron relaxation time. These findings indicated that the Janus β-PdXY monolayers are promising candidates for TE conversion devices.
Collapse
Affiliation(s)
- Mukesh Jakhar
- Department of Physics, School of Basic Sciences, Central University of Punjab, Bathinda, 151401, India.
| | - Raman Sharma
- Department of Physics, Himachal Pradesh University, Shimla, 171005, India
| | - Ashok Kumar
- Department of Physics, School of Basic Sciences, Central University of Punjab, Bathinda, 151401, India.
| |
Collapse
|
8
|
Huang SZ, Fang CG, Feng QY, Wang BY, Yang HD, Li B, Xiang X, Zu XT, Deng HX. Strain Tunable Thermoelectric Material: Janus ZrSSe Monolayer. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:2719-2728. [PMID: 36753560 DOI: 10.1021/acs.langmuir.2c03185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Thermoelectric (TE) performance of the Janus ZrSSe monolayer under biaxial strain is systematically explored by the first-principles approach and Boltzmann transport theory. Our results show that the Janus ZrSSe monolayer has excellent chemical, dynamical, thermal, and mechanical stabilities, which provide a reliable platform for strain tuning. The electronic structure and TE transport parameters of the Janus ZrSSe monolayer can be obviously tuned by biaxial strain. Under 2% tensile strain, the optimal power factor PF of the n-type-doped Janus ZrSSe monolayer reaches 46.36 m W m-1 K-2 at 300 K. This value is higher than that of the most classical TE materials. Under 6% tensile strain, the maximum ZT values for the p-type- and n-type-doped Janus ZrSSe monolayers are 4.41 and 4.88, respectively, which are about 3.83 and 1.49 times the results of no strain, respectively. Such high TE performance can be attributed to high band degeneracy and short phonon relaxation time under strain, causing simultaneous increase of the Seebeck coefficient and suppression of the phonon thermal transport. Present work demonstrates that the Janus ZrSSe monolayer is a promising candidate as a strain-tunable TE material and stimulates further experimental synthesis.
Collapse
Affiliation(s)
- Si-Zhao Huang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Cheng-Ge Fang
- China Academy of Launch Vehicle Technology, Beijing 10076, China
| | - Qing-Yi Feng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bi-Yi Wang
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
| | - Hong-Dong Yang
- Shanghai Institute of Space Power-Sources, Shanghai 200245, China
| | - Bo Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xiao-Tao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hong-Xiang Deng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
| |
Collapse
|
9
|
Lee W, Kang M, Choi JW, Kim S, Park N, Kim G, Kim Y, Saitoh E, Yoon Y, Lee S. Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe 2 /PtSe 2 Homostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203455. [PMID: 36354191 PMCID: PMC9799017 DOI: 10.1002/advs.202203455] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2022] [Revised: 09/08/2022] [Indexed: 06/16/2023]
Abstract
When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe2 /PtSe2 homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe2 layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe2 /PtSe2 homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe2 layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K-1 at 300 K in a four-layer-stacked PtSe2 /PtSe2 homostructure.
Collapse
Affiliation(s)
- Won‐Yong Lee
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
- Division of Solid State ElectronicsDepartment of Electrical EngineeringUppsala UniversityUppsala75103Sweden
| | - Min‐Sung Kang
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Jae Won Choi
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Si‐Hoo Kim
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - No‐Won Park
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Gil‐Sung Kim
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Yun‐Ho Kim
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Eiji Saitoh
- Department of Applied PhysicsThe University of TokyoTokyo113–8656Japan
| | - Young‐Gui Yoon
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| | - Sang‐Kwon Lee
- Department of PhysicsCenter for Berry Curvature based New PhenomenaChung‐Ang UniversitySeoul06974Republic of Korea
| |
Collapse
|
10
|
Li L, Huang Z, Xu J, Huang H. Theoretical analysis of the thermoelectric properties of penta-PdX2 (X = Se, Te) monolayer. Front Chem 2022; 10:1061703. [DOI: 10.3389/fchem.2022.1061703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Accepted: 10/28/2022] [Indexed: 11/09/2022] Open
Abstract
Based on the successful fabrication of PdSe2 monolayers, the electronic and thermoelectric properties of pentagonal PdX2 (X = Se, Te) monolayers were investigated via first-principles calculations and the Boltzmann transport theory. The results showed that the PdX2 monolayer exhibits an indirect bandgap at the Perdew–Burke–Ernzerhof level, as well as electronic and thermoelectric anisotropy in the transmission directions. In the PdTe2 monolayer, P-doping owing to weak electron–phonon coupling is the main reason for the excellent electronic properties of the material. The low phonon velocity and short phonon lifetime decreased the thermal conductivity (κl) of penta-PdTe2. In particular, the thermal conductivity of PdTe2 along the x and y transmission directions was 0.41 and 0.83 Wm−1K−1, respectively. Owing to the anisotropy of κl and electronic structures along the transmission direction of PdX2, an anisotropic thermoelectric quality factor ZT appeared in PdX2. The excellent electronic properties and low lattice thermal conductivity (κl) achieved a high ZT of the penta-PdTe2 monolayer, whereas the maximum ZT of the p- and n-type PdTe2 reached 6.6 and 4.4, respectively. Thus, the results indicate PdTe2 as a promising thermoelectric candidate.
Collapse
|
11
|
Liu J, Zhang X, Wang J, Gu L, Chu PK, Yu XF. Global Structure Search for New 2D PtSSe Allotropes and Their Potential for Thermoelectirc and Piezoelectric applications. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
|
12
|
Nautiyal H, Scardi P. First principles study of SnX 2(X = S, Se) and Janus SnSSe monolayer for thermoelectric applications. NANOTECHNOLOGY 2022; 33:325402. [PMID: 35504261 DOI: 10.1088/1361-6528/ac6c37] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 05/03/2022] [Indexed: 06/14/2023]
Abstract
Tin-based chalcogenides are of increasing interest for thermoelectric applications owing to their low-cost, earth-abundant, and environmentally friendly nature. This is especially true for 2D materials, in which breaking of the structural symmetry plays a crucial role in tuning the electronic properties. 2D materials present a unique opportunity to manipulate the electronic and thermal properties by transforming a monolayer into a Janus monolayer. In the present work, we have investigated the thermoelectric properties of hexagonal SnS2, SnSe2monolayer, and Janus SnSSe monolayer. Density functional theoretical calculations points out the hexagonal Janus SnSSe monolayer as a potential high-performing thermoelectric material. Results for the Janus SnSSe monolayer show an ultra-low thermal conductivity originating from the low group velocity of the low-lying optical modes, leading to superiorzTvalues of 0.5 and 3 at 300 K and 700 K for thep-type doping, respectively.
Collapse
Affiliation(s)
- Himanshu Nautiyal
- Department of Civil, Environmental & Mechanical Engineering, University of Trento, via Mesiano 77, 38123, Trento, Italy
| | - Paolo Scardi
- Department of Civil, Environmental & Mechanical Engineering, University of Trento, via Mesiano 77, 38123, Trento, Italy
| |
Collapse
|
13
|
Xie QY, Ma JJ, Liu QY, Liu PF, Zhang P, Zhang KW, Wang BT. Low thermal conductivity and high performance anisotropic thermoelectric properties of XSe (X = Cu, Ag, Au) monolayers. Phys Chem Chem Phys 2022; 24:7303-7310. [PMID: 35262117 DOI: 10.1039/d1cp05708a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Combining density functional theory (DFT) and semi-classic Boltzmann transport theory, we report the thermoelectric (TE) performance of a family of two-dimensional (2D) group IB-selenides XSe (X = Cu, Ag, Au). The results show that these monolayers exhibit small and anisotropic phonon velocities (0.98-3.84 km s-1), large Grüneisen parameters (up to 100), and drastic phonon scattering between the optical and acoustic phonons. These intrinsic properties originate from strong phonon anharmonicity and suppress the heat transport capacity, resulting in low lattice thermal conductivities (12.54 and 1.22 W m-1 K-1) along the x- and y-directions for a CuSe monolayer. Among our studied monolayers, the 2D CuSe monolayer possesses the most remarkable TE performance with ultrahigh ZT (3.26) for n-type doping along the y-direction at 300 K. CuSe monolayer can achieve higher thermoelectric conversion efficiency at a lower synthetic preparation cost than the expensive AgSe and AuSe monolayers, and our work provides a theoretical basis for paving the way for further experimental studies.
Collapse
Affiliation(s)
- Qing-Yu Xie
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China. .,Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China.
| | - Jiang-Jiang Ma
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Qing-Yi Liu
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China. .,Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China.
| | - Peng-Fei Liu
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China
| | - Pei Zhang
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China.
| | - Kai-Wang Zhang
- School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China.
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Science (CAS), Beijing 100049, China. .,Spallation Neutron Source Science Center (SNSSC), Dongguan 523803, China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| |
Collapse
|
14
|
Lee WY, Kang MS, Kim GS, Choi JW, Park NW, Sim Y, Kim YH, Seong MJ, Yoon YG, Saitoh E, Lee SK. Interface-Induced Seebeck Effect in PtSe 2/PtSe 2 van der Waals Homostructures. ACS NANO 2022; 16:3404-3416. [PMID: 35133142 DOI: 10.1021/acsnano.2c00359] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe2/PtSe2 van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe2 over high-resistance PtSe2 thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe2 films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe2/PtSe2 van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe2 (10 nm)/PtSe2 (2 nm) homostructure approximately 42% compared to that of a pure PtSe2 (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.
Collapse
Affiliation(s)
- Won-Yong Lee
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Min-Sung Kang
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jae Won Choi
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - No-Won Park
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Yumin Sim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Yun-Ho Kim
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Maeng-Je Seong
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Young-Gui Yoon
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Eiji Saitoh
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Sang-Kwon Lee
- Department of Physics and Center for Berry Curvature based New Phenomena, Chung-Ang University, Seoul 06974, Republic of Korea
| |
Collapse
|
15
|
Xu FY, Zhou Y, Zhang T, Zeng ZY, Chen XR, Geng HY. An ab initio study of two-dimensional anisotropic monolayers ScXY (X = S and Se; Y = Cl and Br) for photocatalytic water splitting applications with high carrier mobilities. Phys Chem Chem Phys 2022; 24:3770-3779. [PMID: 35081609 DOI: 10.1039/d1cp05369h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
Recently, metal oxyhalides have been broadly studied due to their hierarchical structures and promising functionalities. Herein, a thorough study of newly modeled monolayers ScXY (X = S and Se; Y = Cl and Br), a class of derivates of ScOBr monolayers, was conducted using first-principles calculations. We theoretically confirm that these ScXY monolayers are mechanically, dynamically, and thermally stable. Young's modulus and Poisson's ratio calculated for all these ScXY monolayers obviously exhibit anisotropic properties. All these monolayers are indirect-gap semiconductors with bandgaps in the range of 2.35-3.18 eV, and their conduction band minimum (CBM) and valence band maximum (VBM) can straddle the reduction and oxidation potential of water very well, respectively. Particularly, ScSeCl and ScSeBr monolayers have the most propitious bandgaps and band alignments to be used as promising photocatalysts, and the predicted carrier mobility is much larger than that of many other two-dimensional materials. Moreover, the predicted anisotropic carrier mobilities and indirect bandgaps will diminish the recombination and facilitate the migration of photo-generated electron and hole pairs. Moreover, biaxial strain (-5% to 5%) effects on the band alignments and bandgaps are discussed. Our findings highlight that ScSeCl and ScSeBr monolayers are envisioned to act as promising photocatalytic and photoelectronic materials with anisotropic ultrahigh carrier mobilities.
Collapse
Affiliation(s)
- Fei-Yang Xu
- Institute of Atomic and Molecular Physics, College of Physics, Sichuan University, Chengdu 610065, China.
| | - Yu Zhou
- Department of Physics, College of Basic Medical Sciences, Army Medical University, Chongqing 400038, China
| | - Tian Zhang
- College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, China
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China.
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, College of Physics, Sichuan University, Chengdu 610065, China.
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China
| |
Collapse
|
16
|
Tang S, Bai S, Wu M, Luo D, zhang YJ, wen S, Yang S. Low-cost pentagonal NiX2 (X=S, Se, and Te) monolayers with strong anisotropy as potential thermoelectric materials. Phys Chem Chem Phys 2022; 24:5185-5198. [DOI: 10.1039/d1cp05671a] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Pentagonal compounds, as a new family of 2D materials, have recently been extensively studied in the fields of electrocatalysis, photovoltaics, and thermoelectrics. Encouraged by the successful synthesis of pentagonal PdSe2,...
Collapse
|
17
|
Chen S, Tao WL, Zhou Y, Zeng ZY, Chen XR, Geng HY. Novel thermoelectric performance of 2D 1T- Se 2Te and SeTe 2with ultralow lattice thermal conductivity but high carrier mobility. NANOTECHNOLOGY 2021; 32:455401. [PMID: 34348253 DOI: 10.1088/1361-6528/ac1a91] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The design and search for efficient thermoelectric materials that can directly convert waste heat into electricity have been of great interest in recent years since they have practical applications in overcoming the challenges of global warming and the energy crisis. In this work, two new two-dimensional 1T-phase group-VI binary compounds Se2Te and SeTe2with outstanding thermoelectric performances are predicted using first-principles calculations combined with Boltzmann transport theory. The dynamic stability is confirmed based on phonon dispersion. It is found that the spin-orbit coupling effect has a significant impact on the band structure of SeTe2, and induces a transformation from indirect to direct band gap. The electronic and phononic transport properties of the Se2Te and SeTe2monolayer are calculated and discussed. High carrier mobility (up to 3744.321 and 2295.413 cm2V-1S-1for electron and hole, respectively) is exhibited, suggesting great applications in nanoelectronic devices. Furthermore, the maximum thermoelectric figure of meritzTof SeTe2for n-type and p-type is 2.88, 1.99 and 5.94, 3.60 at 300 K and 600 K, respectively, which is larger than that of most reported 2D thermoelectric materials. The surprising thermoelectric properties arise from the ultralow lattice thermal conductivitykl(0.25 and 1.89 W m-1K-1for SeTe2and Se2Te at 300 K), and the origin of ultralow lattice thermal conductivity is revealed. The present results suggest that 1T-phase Se2Te and SeTe2monolayer are promising candidates for thermoelectric applications.
Collapse
Affiliation(s)
- ShaoBo Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People's Republic of China
| | - Wang-Li Tao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Yu Zhou
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
| |
Collapse
|