Enhancing Reverse Saturable Absorption in SnS2 Nanosheets by Plasma Treatment

Unlocking Giant Third-Order Optical Nonlinearity in (MA)2CuX4 through Introducing Jahn-Teller Distortion

Nonlinear absorption coefficient and modulation depth stand as pivotal properties of nonlinear optical (NLO) materials, while the existing NLO materials exhibit limitations such as low nonlinear absorption coefficients and/or small modulation depths, thereby severely impeding their practical application. Here we unveil that introducing Jahn-Teller distortion in a Mott-Hubbard system, (MA)2CuX4 (MA=methylammonium; X=Cl, Br) affords the simultaneous attainment of a giant nonlinear absorption coefficient and substantial modulation depth. The optimized compound, (MA)2CuCl4, demonstrates a nonlinear absorption coefficient of (1.5±0.08)×105 cm GW-1, a modulation depth of 60 %, and a relatively low optical limiting threshold of 1.22×10-5 J cm-2. These outstanding attributes surpass those of most reported NLO materials. Our investigation reveals that a more pronounced distortion of the [CuX6]4- octahedron emerges as a crucial factor in augmenting optical nonlinearity. Mechanism study involving structural and spectral characterization along with theoretical calculations indicates a correlation between the compelling performance and the Mott-Hubbard band structure of the materials, coupled with the Jahn-Teller distortion-induced d-d transition. This study not only introduces a promising category of high-performance NLO materials but also provides novel insights into enhancing the performance of such materials.

Recent progress in plasma modification of 2D metal chalcogenides for electronic devices and optoelectronic devices

Two-dimensional metal chalcogenides (2D MCs) present a great opportunity for overcoming the size limitation of traditional silicon-based complementary metal-oxide-semiconductor (CMOS) devices. Controllable modulation compatible with CMOS processes is essential for the improvement of performance and the large-scale applications of 2D MCs. In this review, we summarize the recent progress in plasma modification of 2D MCs, including substitutional doping, defect engineering, surface charge transfer, interlayer coupling modulation, thickness control, and nano-array pattern etching in the fields of electronic devices and optoelectronic devices. Finally, challenges and outlooks for plasma modulation of 2D MCs are presented to offer valuable references for future studies.

Investigations of Vacancy-Assisted Selective Detection of NO2 Molecules in Vertically Aligned SnS2

Two important methods for enhancing gas sensing performance are vacancy/defect and interlayer engineering. Tin sulfide (SnS₂) has recently attracted much attention for sensing of the NO₂ gas due to its active surface sites and tunable electronic structure. Herein, SnS₂ has been synthesized by the chemical vapor deposition (CVD) method followed by nitrogen plasma treatment with different exposure times for fast detection of NO₂ molecules. Plasma treatment created a substantial number of surface vacancies on SnS₂ flakes, which were controlled by the exposure period to modify the surface of flakes. After 12 min of nitrogen plasma treatment, SnS₂ nanoflakes show considerable improvement in NO₂ sensing characteristics, including a high sensing response of ∼264% toward 100 ppm NO₂ at 120°C. The enhancement in the relative response of the sensor is due to the electronic interaction between NO₂ molecules and the S vacancies on the surface of SnS₂. Density functional theory (DFT) computations indicate that the S-vacancy defects on the surface dominate the effective NO₂ detection and the NO₂ adsorption mechanism transition from physisorption to chemisorption. Adsorption kinetics of the NO₂ gas over SnS₂ nanoflake-based chemiresistor sensors were studied using the Lee and Strano model [ Langmuir 2005, 21(11), 5192-5196]. The irreversible rate of the reaction for various NO₂ concentrations exposed to the gas sensor is extracted using this model, which also appropriately describes the response curves. The forward rate constant of the irreversible gas sensor increased with the increase of the N₂ plasma treatment time and reached the maximum in the 12 min plasma-treated sample. Through defect engineering, this research may open up new vistas for the design and synthesis of 2D materials with enhanced sensing properties.

Ultrafast Photocarrier Dynamics in Vertically Aligned SnS2 Nanoflakes Probing with Transient Terahertz Spectroscopy

By employing optical pump Terahertz (THz) probe spectroscopy, ultrafast photocarrier dynamics of a two-dimensional (2D) semiconductor, SnS2 nanoflake film, has been investigated systematically at room temperature. The dynamics of photoexcitation is strongly related to the density of edge sites and defects in the SnS2 nanoflakes, which is controllable by adjusting the height of vertically aligned SnS2 during chemical vapor deposition growth. After photoexcitation at 400 nm, the transient THz photoconductivity response of the films can be well fitted with bi-exponential decay function. The fast and slow processes are shorter in the thinner film than in the thicker sample, and both components are independent on the pump fluence. Hereby, we propose that edge-site trapping as well as defect-assisted electron-hole recombination are responsible for the fast and slow decay progress, respectively. Our experimental results demonstrate that the edge sites and defects in SnS2 nanoflakes play a dominant role in photocarrier relaxation, which is crucial in understanding the photoelectrochemical performance of SnS2 nanoflakes.

Three-Photon-Induced Singlet Excited-State Absorption for the Tunable Ultrafast Optical-Limiting in Distyrylbenzene: A First-Principles Study

The ground and first singlet excited state absorption in distyrylbenzene(DSB) are simulated based on the linear-response time dependent density functional theory(LR-TDDFT). It is found that distyrylbenzene shows strong reverse saturable...

Strong Electron Coupling of Ru and Vacancy-Rich Carbon Dots for Synergistically Enhanced Hydrogen Evolution Reaction

The exploitation of ingenious strategies to improve the activity and stability of ruthenium (Ru) is crucial for the advancement of Ru-based electrocatalysts. Vacancy engineering is a typical strategy for modulating the catalytic activity of electrocatalysts. However, creating vacancies directly into pure metallic Ru is difficult because of the extremely stringent conditions required and will result in instability because the integrity of the crystal structure is destroyed. In response, a compromise tactic by introducing vacancies in a Ru composite structure is proposed, and vacancy-rich carbon dots coupled with Ru (Ru@CDs) are elaborately constructed. Specifically, the vacancy-rich carbon dots (CDs) serve as an excellent platform for anchoring and trapping Ru nanoparticles, thus restraining their agglomeration and growth. As expected, Ru@CDs exhibited excellent catalytic performance with a low overpotential of 30 mV at 10 mA cm^-2 in 1 m KOH, a small Tafel slope of 22 mV decade^-1 , and robust stability even after 10 000 cycles. The low overpotential is comparable to those of most previously reported Ru-based electrocatalysts. Additionally, spectroscopic characterizations and theoretical calculations demonstrate that the rich vacancies and the electron interactions between Ru and CDs synergistically lower the intermediate energy barrier and thereby maximize the activity of the Ru@CDs electrocatalyst.