1
|
Zhu Z, Persson AEO, Wernersson LE. Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor. ACS NANO 2024. [PMID: 39392594 DOI: 10.1021/acsnano.4c09598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2024]
Abstract
The integration of functional materials into electronic devices has become a key approach to extending Moore's law by increasing the functional density of electronic circuits. Here, we present a device technology based on ultrascaled ferroelectric, antiambipolar transistors (ferro-AAT) with robust negative transconductance, enabling a wide range of reconfigurable functionalities with applications in both the digital and analog domains. The device relies on the integration of a hafnia-based ferroelectric gate stack on a vertical nanowire tunnel field-effect transistor. Through intentional gate/source overlap and tunnel-junction engineering, we demonstrate enhanced antiambipolarity with a high negative transconductance that is reconfigurable using the nonvolatile remanent polarization of the ferroelectric. Experimental validation highlights the versatility of this ferro-AAT in two implementation scenarios: content addressable memory (CAM) for high-density data search and reconfigurable signal processing in analog circuits. As a single-transistor cell for CAMs, the ferro-AAT shows subpicojoule operation for one search with a compact footprint of ∼0.01 μm2. For single-transistor-based signal modulation, multistate reconfigurations and high power conversion (>95%) are achieved in the ferro-AAT, resulting in a significant reduction in the complexity of analog circuit design. Our results reveal that the distinctive device properties allow ferro-AATs to operate beyond conventional transistors with multiple reconfigurable functionalities, ultrascaled footprint, and low power consumption.
Collapse
Affiliation(s)
- Zhongyunshen Zhu
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
| | - Anton E O Persson
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
| | - Lars-Erik Wernersson
- Department of Electrical and Information Technology, Lund University, Lund 221 00, Sweden
| |
Collapse
|
2
|
Zhu Z, Persson AEO, Wernersson LE. Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor. Nat Commun 2023; 14:2530. [PMID: 37137907 PMCID: PMC10156808 DOI: 10.1038/s41467-023-38242-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 04/24/2023] [Indexed: 05/05/2023] Open
Abstract
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.
Collapse
Affiliation(s)
- Zhongyunshen Zhu
- Department of Electrical and Information Technology, Lund University, 221 00, Lund, Sweden.
| | - Anton E O Persson
- Department of Electrical and Information Technology, Lund University, 221 00, Lund, Sweden
| | - Lars-Erik Wernersson
- Department of Electrical and Information Technology, Lund University, 221 00, Lund, Sweden.
| |
Collapse
|
3
|
Zhuo F, Wu J, Li B, Li M, Tan CL, Luo Z, Sun H, Xu Y, Yu Z. Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors. RESEARCH (WASHINGTON, D.C.) 2023; 6:0057. [PMID: 36939429 PMCID: PMC10016345 DOI: 10.34133/research.0057] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/02/2023] [Indexed: 01/13/2023]
Abstract
Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance-power-area-cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (μ), equivalent oxide thickness (EOT), and contact resistance (RC ), which enables high ON current (Ion ) with reduced driving voltage (Vdd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
Collapse
Affiliation(s)
- Fulin Zhuo
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jie Wu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Binhong Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Institute of Microelectronics,
Chinese Academy of Sciences, Beijing 100029, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Moyang Li
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology),
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Yong Xu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| |
Collapse
|
4
|
Lee M, Kim TW, Park CY, Lee K, Taniguchi T, Watanabe K, Kim MG, Hwang DK, Lee YT. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications. NANO-MICRO LETTERS 2022; 15:22. [PMID: 36580180 PMCID: PMC9800667 DOI: 10.1007/s40820-022-01001-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/11/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
Collapse
Affiliation(s)
- Minjong Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Tae Wook Kim
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Chang Yong Park
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Min-Gu Kim
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Information and Communication Engineering, Inha University, Incheon, 22212, Republic of Korea.
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
| | - Young Tack Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Electronic Engineering, Inha University, Incheon, 22212, Republic of Korea.
| |
Collapse
|
5
|
Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
|