Stable and Self-Powered Solar-Blind Ultraviolet Photodetectors Based on a Cs3Cu2I5/β-Ga2O3 Heterojunction Prepared by Dual-Source Vapor Codeposition

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

Ultrasensitive Self-Powered Flexible Crystalline β-Ga2O3-Based Photodetector Obtained through Lattice Symmetry and Band Alignment Engineering

Due to its portable and self-powered characteristics, the construction of Ga2O3-based semiconductor flexible devices that can improve the adaptability in various complex environments have drawn great attention in recent decades. However, conventional Ga2O3-based flexible heterojunctions are based on either amorphous or poor crystalline Ga2O3 materials, which severely limit the performance of the corresponding devices. Here, through lattice-symmetry and energy-band alignment engineering, we construct a high-quality crystalline flexible NiO/β-Ga2O3 p-n self-powered photodetector. Owing to its suitable energy-band alignment structure, the device shows a high photo-to-dark current ratio (1.71 × 105) and a large detection sensitivity (6.36 × 1014 Jones) under zero bias, which is superior than most Ga2O3 self-powered photodetectors even for those based on rigid substrates. Moreover, the fabricated photodetectors further show excellent mechanical stability and robustness in bending conditions, demonstrating their potential practical applications in flexible optoelectronic devices. These findings provide insights into the manipulation of crystal lattice and energy band engineering in flexible self-powered photodetectors and also offer guideline for designing other Ga2O3-based flexible electronic devices.

Self-Powered Visible-Blind Ultraviolet Photodetector Based on Organic-Inorganic Hybrid Copper Halide [N(C2H5)4]2[Cu2Br4]

Organic-inorganic hybrid ternary copper halides offer a broader spectrum of structural possibilities for finely tuning their optoelectronic properties. Herein, we demonstrate for the first time the potential of [N(C2H5)4]2[Cu2Br4], a zero-dimensional hybrid copper halide [(TEA)2Cu2Br4], for ultraviolet (UV) photodetection. A self-powered, visible-blind UV photodetector based on a (TEA)2Cu2Br4/GaN heterojunction architecture is developed, exhibiting a high responsivity, a high detectivity, and fast response speeds. The device demonstrates exceptional stability against environmental oxygen/moisture, heat, and UV light illumination, surpassing the stability of reported copper-based UV photodetectors. Our work highlights the significant potential of (TEA)2Cu2Br4 as a lead-free, stable, and efficient material for next-generation UV photodetection technology.

Visible-ultraviolet dual-band photodetectors based on an all-inorganic CsPbCl3/p-GaN heterostructure

All-inorganic metal halide perovskites (MHPs) have attracted increasing attention because of their high thermal stability and band gap tunability. Among them, CsPbCl3 is considered a promising semiconductor material for visible-ultraviolet dual-band photodetectors because of its excellent photoelectric properties and suitable band gap value. In this work, we fabricated a visible-ultraviolet dual-band photodetector based on a CsPbCl3/p-GaN heterojunction using the spin coating method. The formation of the heterojunction enables the device to exhibit obvious dual-band response behavior at positive and negative bias voltages. At the same time, the dark current of the device can be as low as 2.42 × 10-9 A, and the corresponding detection rate can reach 5.82 × 1010 Jones. In addition, through simulation calculations, it was found that the heterojunction has a type II energy band arrangement, and the heterojunction response band light absorption is significantly enhanced. The type II energy band arrangement will separate electron-hole pairs more effectively, which will help improve device performance. The successful implementation of visible-ultraviolet dual-band photodetectors based on a CsPbCl3/p-GaN heterojunction provides guidance for the application of all-inorganic MHPs in the field of multi-band photodetectors.

Highly Wavelength-Selective Self-Powered Solar-Blind Ultraviolet Photodetector Based on Colloidal Aluminum Nitride Quantum Dots

Colloidal quantum dots are semiconductor nanocrystals endowed with unique optoelectronic properties. A major challenge to the field is the lack of methods for synthesizing quantum dots exhibit strong photo-response in the deep-ultraviolet (DUV) band. Here, a facile solution-processed method is presented for synthesizing ultrawide bandgap aluminium nitride quantum dots (AlN QDs) showing distinguished UV-B photoluminescence. Combined with the strong optical response in solar blind band, a solution-processed, self-powered AlN-QDs/β-Ga2O3 solar-blind photodetector is demonstrated. The photodetector is characterized with a high responsivity of 1.6 mA W-1 under 0 V bias and specific detectivity 7.60 × 10-11 Jones under 5 V bias voltage with good solar blind selectivity. Given the solution-processed capability of the devices and extraordinary properties of AlN QDs, this study anticipates the utilization of AlN QDs will open up unique opportunities for cost-effective industrial production of high-performance DUV optoelectronics for large-scale applications.

High performance solar-blind UV detector with Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer structure on MgO substrate

Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer structure UV detectors are made on single structure MgO substrate by PLD method, and the effect of different thickness top MgZnO layer on the UV response characteristics of the detector are studied. Compared with the single layer MgZnO detector that made by Mg0.3Zn0.7O target, the Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer detector with 30 nm top layer, shows much higher deep UV response (21.3 A W-1at 265 nm), much smaller dark current(66.9 pA) and much higher signal-to-noise ratio (2.8 × 105) at 25 V bias voltage. And the device also shows relative high response (23.1 A W-1) at 235 nm deep UV light at 25 V bias voltage, which is mainly attributed by the bottom MgZnO layer with higher Mg composition. When the top layer is 66.7 nm thick, the response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector reached 228.8 A W-1at 255 nm under 25 V bias voltage, the signal-to-noise ratio of which is 10573 under 20 V bias voltage, and the near UV response of the device is also big because of more h-MgZnO in top MgZnO layer. When the top layer reached 90.2 nm, there are much more h-MgZnO in the top MgZnO layer, the peak response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is just 6.65 A W-1at 320 nm under 25 V bias voltage, the signal-to-noise ratio of which is 1248. The high Mg composition bottom MgZnO decrease the dark current of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector, both the 2DEG effect of the double layer structure and the amplify effect of the mix-phase MgZnO top layer, increased theIuvand deep UV response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector. Therefore, the double layer Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is more sensitive at faint deep UV light compared with previous reported MgZnO detectors, and the MgxZn1-xO/MgyZn1-yO detector shows similarIuvand signal-noise-ratio at faint deep UV light as high-temperature fabricated AlxGa1-xN/AlyGa1-yN detectors.

Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications

Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.

High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO2/β-Ga2O3 Heterojunctions

Ga₂O₃ is a wide-bandgap semiconductor that has shown great potential for application in solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of Ga₂O₃-based self-driven solar-blind UV photodetectors are insufficient for practical applications at present because of the limited separation of photogenerated carriers in the devices. In this work, Hf_0.5Zr_0.5O₂/β-Ga₂O₃ heterojunction-based self-driven solar-blind UV photodetectors are constructed by combining ferroelectric Hf_0.5Zr_0.5O₂ (HfZrO₂) material with Ga₂O₃, taking advantage of the ultrawide bandgap of HfZrO₂ and the favorable II-type energy band configuration between both. Upon optimization, a HfZrO₂/β-Ga₂O₃ heterojunction-based UV photodetector with a HfZrO₂ layer thickness of 10 nm is shown to provide remarkable responsivity (R = (14.64 ± 0.3) mA/W) and detectivity (D* = (1.58 ± 0.03) × 10¹² Jones), which are much superior to those of a single Ga₂O₃-based device toward 240 nm light illumination. Further, the device performance is adjustable with varying poling states of HfZrO₂ and shows substantial enhancement in the upward poling state, benefiting from the constructive coupling of the ferroelectric depolarization electric field in HfZrO₂ and the built-in electric field at the HfZrO₂/β-Ga₂O₃ interface. Under illumination of weak light of 0.19 μW/cm², the upward poled device shows significantly enhanced R (52.6 mA/W) and D* (5.7 × 10¹² Jones) values. The performance of our device surpasses those of most previously reported Ga₂O₃-based self-driven photodetectors, indicating its great potential in practical applications for sensitive solar-blind UV detection.

Large-Scale, Uniform-Patterned CsCu2 I3 Films for Flexible Solar-Blind Photodetectors Array with Ultraweak Light Sensing

Cesium copper halide perovskite is one of the promising materials for solar-blind light detection. However, most of the cesium copper halide perovskite-based photodetectors (PDs) are focused on ultraviolet A detection and realized on the rigid substrate in the single device configuration. Here, a flexible solar-blind PDs array (10 × 10 pixels) based on the CsCu₂ I₃ film patterns for ultraweak light sensing and light distribution imaging is reported. Large-scale CsCu₂ I₃ film arrays are synthesized with various shapes and uniform dimensions through a simple vacuum-heating-assisted solution method. Benefiting from excellent air stability and superior resistance to the photodegrading of the CsCu₂ I₃ film, the array device exhibits long-term stable photoswitching behavior for 8 h and ultralow light detection capability to resolve the light intensity of 6.1 nW cm^-2 with a high responsivity of 62 A W^-1 , and the array device can acquire clear images of "G", "X", and "U" showing the input light distribution. Moreover, the flame detection and warning system based on a curved solar-blind PDs array is demonstrated, which can be used for multi-flame monitoring and locating. These results can encourage potential applications of the CsCu₂ I₃ film-based PDs array in the field of optical communication and environment monitoring.

Copper-based metal halides for X-ray and photodetection

Copper-based metal halides have become important materials in the field of X-ray and photodetection due to their excellent optical properties, good environmental stability and low toxicity. This review presents the progress of research on crystal structure/morphology, photophysics/optical properties and applications of copper-based metal halides. We also discuss the challenges of copper-based metal halides with a perspective of their future research directions.

Cs3Cu2I5/ZnO Heterostructure for Flexible Visible-Blind Ultraviolet Photodetection

Wearable, portable, and biocompatible optoelectronic devices made of all-green and abundant materials and fabricated by low-temperature solution method are the key point in the development of next generation of intelligent optoelectronics. However, this is usually limited by the weaknesses of mono-component materials, such as non-adjustable photoresponse region, high carrier recombination rate, high signal-to-noise ratio, as well as the weak mechanical flexibility of bulk films. In this work, the Cs₃Cu₂I₅/ZnO heterostructure flexible photodetectors were constructed by a low-temperature solution method combined with spin-coating technique. The heterostructure combines the low dark current and strong deep ultraviolet absorption of Cs₃Cu₂I₅ quantum dots with the high carrier mobility of ZnO quantum dots as well as the efficient charge separation of the vertical p-n junction, to improve the photodetection performance. The heterostructure shows enhanced light/dark current ratio and ultraviolet-to-visible rejection ratios. Under an illumination of 280 nm light, an optical detectivity as high as 1.26 × 10¹¹ Jones was obtained; the optical responsivity and response time are much better than those of control devices. After 300 times of 180° bending cycles, the photocurrent had no obvious change. The results demonstrate that the Cs₃Cu₂I₅/ZnO heterostructure has great potential in wearable and portable visible-blind ultraviolet optoelectronic devices.

An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector

Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO₂) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on-off ratio of 2.49 × 10⁵, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO₂ heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light-dark ratio was increased by 8.40 × 10⁵ times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.

A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure

Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu₂I₃/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu₂I₃ dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu₂I₃/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.

Polymer additive engineering of K2CuBr3 nanocrystalline films to achieve efficient and stable deep-blue emission

Recently, non-toxic alternatives to lead-halide perovskites have been greatly sought after in optoelectronics applications. Deep-blue luminescent material is mainly required for fabricating white light source and expanding the color gamut of full-color displays. However, the synthesis of high-performance lead-free perovskite films with efficient blue emission is still a critical challenge currently, limiting their further practical applications. Here, a novel strategy is reported to prepare non-toxic and deep-blue-emitting K2CuBr3 nanocrystalline films by introducing polymer poly(methyl methacrylate) (PMMA) additives into the anti-solvent. It is found that the PMMA additives could effectively reduce the grain size and improve the crystallinity of K2CuBr3 films, resulting in an enhanced radiative recombination by defect passivation and confinement of excitons in the nanograins. As a result, the PMMA-treated K2CuBr3 films achieve a bright deep-blue light with color coordinates at (0.155, 0.042), and the photoluminescence quantum yield obtained is about 3.3 times that of the pristine sample. Moreover, the treated K2CuBr3 films exhibit a substantially enhanced stability under harsh environmental conditions, maintaining >70% of their initial performances in high humidity environment (50%–70% humidity, 190 h) or under uninterrupted ultraviolet light radiation (254 nm, 3.4 mW cm−2, 150 h). These findings pave a promising strategy for achieving efficient and stable deep-blue metal halide films, showing their potential applications in optoelectronic devices.

Antisolvent-Processed One-Dimensional Ternary Rubidium Copper Bromine Microwires for Sensitive and Flexible Ultraviolet Photodetectors

Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb₂CuBr₃ single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb₂CuBr₃ MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 10¹¹ Jones, responsivity of 113.64 mA W^-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb₂CuBr₃ for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.