Efficiency Improvement of Bournonite CuPbSbS3 Solar Cells via Crystallinity Enhancement

Synthesis of Phase Junction Cadmium Sulfide Photocatalyst under Sulfur-Rich Solution System for Efficient Photocatalytic Hydrogen Evolution

Photocatalyst with excellent semiconductor properties is the key point to realize the efficient photocatalytic hydrogen evolution (PHE). As a representative binary metal sulfide (BMS) semiconductor, cadmium sulfide (CdS) possesses suitable bandgap of 2.4 eV and negative conduction band potential, which has a great potential to realize efficient visible-light PHE performance. In this work, CdS with unique cubic/hexagonal phase junction is facilely synthesized through a sulfur-rich butyldithiocarbamate acid (BDCA) solution process. The results illustrate that the phase junction can efficiently enhance the separation and transfer of photogenerated electron-hole pairs, resulting in an excellent PHE performance. In addition, the sulfur-rich property of BDCA solution leads to the absence of additional sulfur sources during the synthesis of CdS photocatalyst, which greatly simplifies the fabrication process. The optimal PHE rate of the BDCA-synthesized phase junction CdS photocatalyst is 7.294 mmol g^-1  h^-1 and exhibits a favorable photostability. Moreover, density function theory calculations indicated that the apparent redistribution of charge density in the cubic/hexagonal phase junction regions gives a suitable hydrogen adsorption capacity, which is responsible for the enhanced PHE activity.

Spiers Memorial Lecture: Next generation chalcogenide-based absorbers for thin-film solar cells

Inorganic-based thin-film photovoltaics (TFPV) represents an important component of the growing low-carbon energy market and plays a vital role in the drive toward lower cost and increased penetration of solar energy. Yet, commercialized thin-film absorber technologies suffer from some non-ideal characteristics, such as toxic or non-abundant element use (e.g., CdTe and Cu(In,Ga)(S,Se)₂, which bring into question their suitability for terawatt deployment. Numerous promising chalcogenide, halide, pnictide and oxide semiconductors are being pursued to bridge these concerns for TFPV and several promising paths have emerged, both as prospective replacements for the entrenched technologies, and to serve as partner (i.e., higher bandgap) absorbers for tandem junction devices-e.g., to be used with a lower bandgap Si bottom cell. The current perspective will primarily focus on emerging chalcogenide-based technologies and provide both an overview of absorber candidates that have been of recent interest and a deeper dive into an exemplary Cu₂BaSnS₄-related family. Overall, considering the combined needs of high-performance, low-cost, and operational stability, as well as the experiences gained from existing commercialized thin-film absorber technologies, chalcogenide-based semiconductors represent a promising direction for future PV development and also serve to highlight common themes and needs among the broader TFPV materials family.

Molecular Precursor Route to Bournonite (CuPbSbS3) Thin Films and Powders

Quaternary metal chalcogenides have attracted attention as candidates for absorber materials for inexpensive and sustainable solar energy generation. One of these materials, bournonite (orthorhombic CuPbSbS3), has attracted much interest of late for its properties commensurate with photovoltaic energy conversion. This paper outlines the synthesis of bournonite for the first time by a discrete molecular precursor strategy. The metal dithiocarbamate complexes bis(diethyldithiocarbamato)copper (II) (Cu(S2CNEt2)2, (1)), bis(diethyldithiocarbamato)lead (II) (Pb(S2CNEt2)2, (2)), and bis(diethyldithiocarbamato)antimony (III) (Sb(S2CNEt2)3, (3)) were prepared, characterized, and employed as molecular precursors for the synthesis of bournonite powders and the thin film by solvent-less pyrolysis and spray-coat-pyrolysis techniques, respectively. The polycrystalline powders and thin films were characterized by powder X-ray diffraction (p-XRD), which could be indexed to orthorhombic CuPbSbS3. The morphology of the powder at the microscale was studied using scanning electron microscopy (SEM). Energy-dispersive X-ray spectroscopy (EDX) was used to elucidate an approximately 1:1:1:3 Cu/Pb/Sb/S elemental ratio. An optical band gap energy of 1.55 eV was estimated from a Tauc plot, which is close to the theoretical value of 1.41 eV.