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Wang X, Chen A, Wu X, Zhang J, Dong J, Zhang L. Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution. NANO-MICRO LETTERS 2024; 16:163. [PMID: 38546814 PMCID: PMC10978568 DOI: 10.1007/s40820-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/17/2024] [Indexed: 04/01/2024]
Abstract
In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
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Affiliation(s)
- Xuan Wang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Akang Chen
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - XinLei Wu
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jiatao Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Leining Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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Wu Y, Xin Z, Zhang Z, Wang B, Peng R, Wang E, Shi R, Liu Y, Guo J, Liu K, Liu K. All-Transfer Electrode Interface Engineering Toward Harsh-Environment-Resistant MoS 2 Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210735. [PMID: 36652589 DOI: 10.1002/adma.202210735] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 01/08/2023] [Indexed: 05/05/2023]
Abstract
Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect-free interfaces are of vital importance for building nanoscale harsh-environment-resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode-channel interfaces. Here, harsh-environment-resistant MoS2 transistors are developed by engineering electrode-channel interfaces with an all-transfer of van der Waals electrodes. The delivered defect-free, graphene-buffered electrodes keep the electrode-channel interfaces intact and robust. As a result, the as-fabricated MoS2 devices have reduced Schottky barrier heights, leading to a very large on-state current and high carrier mobility. More importantly, the defect-free, hydrophobic graphene buffer layer prevents metal diffusion from the electrodes to MoS2 and the intercalation of water molecules at the electrode-MoS2 interfaces. This enables high resistances of MoS2 devices with all-transfer electrodes to various harsh environments, including humid, oxidizing, and high-temperature environments, surpassing the devices with other kinds of electrodes. The work deepens the understanding of the roles of electrode-channel interfaces in nanoscale devices and provides a promising interface engineering strategy to build nanoscale harsh-environment-resistant devices.
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Affiliation(s)
- Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yiqun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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Hashemi R, Shojaei S, Rezaei B, Liu Z. Valley-optical absorption in planar transition metal dichalcogenide superlattices. Sci Rep 2023; 13:5439. [PMID: 37012309 PMCID: PMC10070451 DOI: 10.1038/s41598-023-31950-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 03/20/2023] [Indexed: 04/05/2023] Open
Abstract
In this study, we investigate the optical absorption of a planar superlattice comprising alternatively arranged two-dimensional Transition Metal DiChalcogenide semiconductors. Within a semi-classical model and using the Dirac-like equation in the presence of light interaction as a perturbation, we obtained the governing Hamiltonian. Using this Hamiltonian, we derived a fully analytical relationship for the absorption coefficient of the structure. By calculating the effective mass for different bands and using the Drude-Lorentz model, our approach is able to determine the oscillator strength and the effective refractive index of the structure. We found that the spin-orbit coupling has important effect on the absorption coefficient and energy bands where it reduces the absorption coefficient of the structure from typical value of [Formula: see text]-[Formula: see text], also the valence band experiences a significant blue shift, while the conduction band shows minor changes due to spin orbit coupling. Moreover, the role of incident light angle and light polarization were studied in details at different valleys of [Formula: see text] and [Formula: see text]. The most important finding is that by changing the polarization of incident light, it is possible to increase the absorption coefficients of [Formula: see text] and [Formula: see text] valleys by up to 30 times. For light propagation direction close to perpendicular to the plane of the superlattice, the right-circular polarization is absorbed only by [Formula: see text] valley in contrast to the left-circular polarization, which is absorbed by the [Formula: see text] valley. Our model might be used to design newly developed 2D optovalleytronic devices.
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Affiliation(s)
- R Hashemi
- Faculty of Physics, University of Tabriz, Tabriz, Iran
- Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran
| | - S Shojaei
- Faculty of Physics, University of Tabriz, Tabriz, Iran.
- Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran.
| | - B Rezaei
- Faculty of Physics, University of Tabriz, Tabriz, Iran
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS MATERIALS AU 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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Zhang S, Deng X, Wu Y, Wang Y, Ke S, Zhang S, Liu K, Lv R, Li Z, Xiong Q, Wang C. Lateral layered semiconductor multijunctions for novel electronic devices. Chem Soc Rev 2022; 51:4000-4022. [PMID: 35477783 DOI: 10.1039/d1cs01092a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.
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Affiliation(s)
- Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shishu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China.,Frontier Science Center for Quantum Information, Beijing, 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
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