1
|
Huang YC, Wang TY, Huang ZH, Santiago SRMS. Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27576-27586. [PMID: 38722948 DOI: 10.1021/acsami.4c01466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.
Collapse
Affiliation(s)
- Yu-Ching Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Biochemical Technology R&D Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Tai-Yuan Wang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Zhi-Hao Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | | |
Collapse
|
2
|
Kim TH, Lee JH, Jang MH, Lee GM, Shim ES, Oh S, Saeed MA, Lee MJ, Yu BS, Hwang DK, Park CW, Lee SY, Jo JW, Shim JW. Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403647. [PMID: 38708960 DOI: 10.1002/adma.202403647] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 04/23/2024] [Indexed: 05/07/2024]
Abstract
The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fA cm⁻2 at V → -0.1 V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow of JD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization.
Collapse
Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Ji Hyeon Lee
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Min Ho Jang
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Gyeong Min Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Eun Soo Shim
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Seunghyun Oh
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min Jong Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byoung-Soo Yu
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Chae Won Park
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Sae Youn Lee
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jea Woong Jo
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| |
Collapse
|
3
|
Huang YT, Nodari D, Furlan F, Zhang Y, Rusu M, Dai L, Andaji-Garmaroudi Z, Darvill D, Guo X, Rimmele M, Unold T, Heeney M, Stranks SD, Sirringhaus H, Rao A, Gasparini N, Hoye RLZ. Fast Near-Infrared Photodetectors Based on Nontoxic and Solution-Processable AgBiS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310199. [PMID: 38063859 DOI: 10.1002/smll.202310199] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 11/17/2023] [Indexed: 05/03/2024]
Abstract
Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, it is rare to find photodetectors with >300 kHz cut-off frequencies, especially in the NIR region, and many of the emerging inorganic materials explored are comprised of toxic elements, such as lead. Herein, solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination are developed. These high cut-off frequencies are due to the short transit distances of charge-carriers in the ultrathin photoactive layer of AgBiS2 photodetectors, which arise from the strong light absorption of this material, such that film thicknesses well below 120 nm are sufficient to absorb >65% of NIR to visible light. It is also revealed that ion migration plays a critical role in the photo-response speed of these devices, and its detrimental effects can be mitigated by finely tuning the thickness of the photoactive layer, which is important for achieving low dark current densities as well. These outstanding characteristics enable the realization of air-stable, real-time heartbeat sensors based on NIR AgBiS2 photodetectors, which strongly motivates their future integration in high-throughput systems.
Collapse
Affiliation(s)
- Yi-Teng Huang
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
| | - Davide Nodari
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, London, W12 0BZ, UK
| | - Francesco Furlan
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, London, W12 0BZ, UK
| | - Youcheng Zhang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
| | - Marin Rusu
- Struktur und Dynamik von Energiematerialien, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109, Berlin, Germany
| | - Linjie Dai
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
| | | | - Daniel Darvill
- Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
| | - Xiaoyu Guo
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Martina Rimmele
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Thomas Unold
- Struktur und Dynamik von Energiematerialien, Helmholtz-Zentrum Berlin für Materialien und Energie, 14109, Berlin, Germany
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, London, W12 0BZ, UK
- KAUST Solar Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Samuel D Stranks
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - Henning Sirringhaus
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, White City Campus, London, W12 0BZ, UK
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
- Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
| |
Collapse
|
4
|
Lou Z, Tao J, Wei B, Jiang X, Cheng S, Wang Z, Qin C, Liang R, Guo H, Zhu L, Müller‐Buschbaum P, Cheng H, Xu X. Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304174. [PMID: 37991135 PMCID: PMC10754100 DOI: 10.1002/advs.202304174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 10/05/2023] [Indexed: 11/23/2023]
Abstract
In the fast-evolving landscape of decentralized and personalized healthcare, the need for multimodal biosensing systems that integrate seamlessly with the human body is growing rapidly. This presents a significant challenge in devising ultraflexible configurations that can accommodate multiple sensors and designing high-performance sensing components that remain stable over long periods. To overcome these challenges, ultraflexible organic photodetectors (OPDs) that exhibit exceptional performance under near-infrared illumination while maintaining long-term stability are developed. These ultraflexible OPDs demonstrate a photoresponsivity of 0.53 A W-1 under 940 nm, shot-noise-limited specific detectivity of 3.4 × 1013 Jones, and cut-off response frequency beyond 1 MHz at -3 dB. As a result, the flexible photoplethysmography sensor boasts a high signal-to-noise ratio and stable peak-to-peak amplitude under hypoxic and hypoperfusion conditions, outperforming commercial finger pulse oximeters. This ensures precise extraction of blood oxygen saturation in dynamic working conditions. Ultraflexible OPDs are further integrated with conductive polymer electrodes on an ultrathin hydrogel substrate, allowing for direct interface with soft and dynamic skin. This skin-integrated sensing platform provides accurate measurement of photoelectric and biopotential signals in a time-synchronized manner, reproducing the functionality of conventional technologies without their inherent limitations.
Collapse
Affiliation(s)
- Zirui Lou
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
- School of Advanced MaterialsPeking University Shenzhen Graduate SchoolShenzhen518055China
| | - Jun Tao
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Binbin Wei
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Xinyu Jiang
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
| | - Simin Cheng
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Zehao Wang
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Chao Qin
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Rong Liang
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Haotian Guo
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Liping Zhu
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Peter Müller‐Buschbaum
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
- Heinz Maier‐Leibnitz‐Zentrum (MLZ)Technische Universität MünchenLichtenbergstr. 185748GarchingGermany
| | - Hui‐Ming Cheng
- Institute of Technology for Carbon Neutrality & Faculty of Materials Science and Energy EngineeringShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang110016China
| | - Xiaomin Xu
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| |
Collapse
|
5
|
Kim H, Kang J, Kim MI, Jeong W, Baek S, Ahn H, Chung DS, Jung IH. Development of n-Type Small-Molecule Acceptors for Low Dark Current Density and Fast Response Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38032313 DOI: 10.1021/acsami.3c11174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Suppressing the dark current density (Jd) while maintaining sufficient charge transport is important for improving the specific detectivity (D*) and dynamic characteristics of organic photodetectors (OPDs). In this study, we synthesized three novel small-molecule acceptors (SMAs) densely surrounded by insulating alkyl side chains to minimize the Jd in OPDs. Introducing trialkylated N-annulated perylene diimide as a terminal moiety to the alkylated π-conjugated core structure was highly efficient in suppressing Jd in the devices, resulting in an extremely low Jd of 4.60 × 10-11 A cm-2 and 10-100 times improved D* values in the devices. In addition, SMAs with a geometrically aligned backbone structure exhibited better intermolecular ordering in the blended films, resulting in 3-10 times as high responsivity (R) values in the OPDs. Outstanding OPD performances with a D* of 8.09 × 1012 Jones, -3 dB cutoff frequency of 205.2 kHz, and rising response time of 16 μs were achieved under a 530 nm illumination in photoconductive mode. Geometrically aligned core-terminal SMAs densely surrounded by insulating alkyl side chains are promising for improving the static and dynamic properties of OPDs.
Collapse
Affiliation(s)
- Hyeokjun Kim
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - Jinhyeon Kang
- Light/Display Convergence R&BD Division, Cheorwon Plasma Research Institute, 7194 Geumgang-ro, Seo-myeon, Cheorwon-gun, Gangwon-do 24062, Republic of Korea
| | - Myeong In Kim
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - WonJo Jeong
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - Seyeon Baek
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37363, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37363, Republic of Korea
| | - In Hwan Jung
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| |
Collapse
|
6
|
Huang J, Luong HM, Lee J, Chae S, Yi A, Qu ZZ, Du Z, Choi DG, Kim HJ, Nguyen TQ. Green-Solvent-Processed High-Performance Broadband Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37748-37755. [PMID: 37505202 DOI: 10.1021/acsami.3c09391] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/29/2023]
Abstract
Solution-processed organic photodetectors with broadband activity have been demonstrated with an environmentally benign solvent, ortho-xylene (o-xylene), as the processing solvent. The organic photodetectors employ a wide band gap polymer donor PBDB-T and a narrow band gap small-molecule non-fullerene acceptor CO1-4F, both dissolvable in o-xylene at a controlled temperature. The o-xylene-processed devices have shown external quantum efficiency of up to 70%, surpassing the counterpart processed with chlorobenzene. With a well-suppressed dark current, the device can also present a high specific detectivity of over 1012 Jones at -2 V within practical operation frequencies and is applicable for photoplethysmography with its fast response. These results further highlight the potential of green-solvent-processed organic photodetectors as a high-performing alternative to their counterparts processed in toxic chlorinated solvents without compromising the excellent photosensing performance.
Collapse
Affiliation(s)
- Jianfei Huang
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Hoang Mai Luong
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Jaewon Lee
- Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon 34134, South Korea
| | - Sangmin Chae
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Ahra Yi
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Department of Organic Material Science and Engineering, School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Zhong-Ze Qu
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Zhifang Du
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
| | - Dylan G Choi
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
| | - Hyo Jung Kim
- Department of Organic Material Science and Engineering, School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Thuc-Quyen Nguyen
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| |
Collapse
|
7
|
Siddik AB, Georgitzikis E, Hermans Y, Kang J, Kim JH, Pejovic V, Lieberman I, Malinowski PE, Kadashchuk A, Genoe J, Conard T, Cheyns D, Heremans P. Interface-Engineered Organic Near-Infrared Photodetector for Imaging Applications. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37326205 DOI: 10.1021/acsami.3c03708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on a silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of the origin of dark current is obtained using an elaborate set of characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and transient photovoltage decay measurements. These characterization results are complemented by energy band structures deduced from ultraviolet photoelectron spectroscopy. The presence of trap states and a strong dependency of activation energy on the applied reverse bias voltage point to a dark current mechanism based on trap-assisted field-enhanced thermal emission (Poole-Frenkel emission). We significantly reduce this emission by introducing a thin interfacial layer between the donor: acceptor blend and the a-IGZO ETL and obtain a dark current as low as 125 pA/cm2 at an applied reverse bias of -1 V. Thanks to the use of high-mobility metal-oxide transport layers, a fast photo response time of 639 ns (rise) and 1497 ns (fall) is achieved, which, to the best of our knowledge, is among the fastest reported for NIR OPDs. Finally, we present an imager integrating the NIR OPD on a complementary metal oxide semiconductor read-out circuit, demonstrating the significance of the improved dark current characteristics in capturing high-quality sample images with this technology.
Collapse
Affiliation(s)
- Abu Bakar Siddik
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
| | | | | | - Jubin Kang
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology, 44919 Ulsan, South Korea
| | | | - Vladimir Pejovic
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
| | | | | | - Andriy Kadashchuk
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauky 46, 03028 Kyiv, Ukraine
| | - Jan Genoe
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
| | | | | | - Paul Heremans
- IMEC, Kapeldreef 75, 3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
| |
Collapse
|
8
|
Malinowski PE, Pejović V, Lieberman I, Kim JH, Siddik AB, Georgitzikis E, Lim MJ, Moreno Hagelsieb L, Hermans Y, Pintor Monroy I, Song W, Basak S, Gehlhaar R, De Roose F, Siskos A, Papadopoulos N, Thijs S, Vershooten T, Chandrasekaran N, Li Y, Soussan P, Genoe J, Heremans P, Lee J, Cheyns D. Image sensors using thin-film absorbers. APPLIED OPTICS 2023; 62:F21-F30. [PMID: 37707127 DOI: 10.1364/ao.485552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 02/26/2023] [Indexed: 09/15/2023]
Abstract
Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions of devices annually. Such high volumes are possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at the core of CMOS image sensors, are perfectly suited to replicate human vision. Thin-film absorbers are an alternative family of photoactive materials, distinguished by the layer thickness comparable with or smaller than the wavelength of interest. They allow design of imagers with functionalities beyond Si-based sensors, such as transparency or detectivity at wavelengths above Si cutoff (e.g., short-wave infrared). Thin-film image sensors are an emerging device category. While intensive research is ongoing to achieve sufficient performance of thin-film photodetectors, to our best knowledge, there have been few complete studies on their integration into advanced systems. In this paper, we will describe several types of image sensors being developed at imec, based on organic, quantum dot, and perovskite photodiode and show their figures of merit. We also discuss the methodology for selecting the most appropriate sensor architecture (integration with thin-film transistor or CMOS). Application examples based on imec proof-of-concept sensors are demonstrated to showcase emerging use cases.
Collapse
|
9
|
Ollearo R, Ma X, Akkerman HB, Fattori M, Dyson MJ, van Breemen AJ, Meskers SC, Dijkstra W, Janssen RA, Gelinck GH. Vitality surveillance at distance using thin-film tandem-like narrowband near-infrared photodiodes with light-enhanced responsivity. SCIENCE ADVANCES 2023; 9:eadf9861. [PMID: 36800431 PMCID: PMC9937568 DOI: 10.1126/sciadv.adf9861] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Accepted: 01/13/2023] [Indexed: 06/09/2023]
Abstract
Remote measurement of vital sign parameters like heartbeat and respiration rate represents a compelling challenge in monitoring an individual's health in a noninvasive way. This could be achieved by large field-of-view, easy-to-integrate unobtrusive sensors, such as large-area thin-film photodiodes. At long distances, however, discriminating weak light signals from background disturbance demands superior near-infrared (NIR) sensitivity and optical noise tolerance. Here, we report an inherently narrowband solution-processed, thin-film photodiode with ultrahigh and controllable NIR responsivity based on a tandem-like perovskite-organic architecture. The device has low dark currents (<10-6 mA cm-2), linear dynamic range >150 dB, and operational stability over time (>8 hours). With a narrowband quantum efficiency that can exceed 200% at 850 nm and intrinsic filtering of other wavelengths to limit optical noise, the device exhibits higher tolerance to background light than optically filtered silicon-based sensors. We demonstrate its potential in remote monitoring by measuring the heart rate and respiration rate from distances up to 130 cm in reflection.
Collapse
Affiliation(s)
- Riccardo Ollearo
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Xiao Ma
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Hylke B. Akkerman
- TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, Netherlands
| | - Marco Fattori
- Integrated Circuits, Departments of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Matthew J. Dyson
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | | | - Stefan C. J. Meskers
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Wijnand Dijkstra
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - René A. J. Janssen
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven, Netherlands
| | - Gerwin H. Gelinck
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, Netherlands
| |
Collapse
|
10
|
Ma X, Bin H, van Gorkom BT, van der Pol TPA, Dyson MJ, Weijtens CHL, Fattori M, Meskers SCJ, van Breemen AJJM, Tordera D, Janssen RAJ, Gelinck GH. Identification of the Origin of Ultralow Dark Currents in Organic Photodiodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209598. [PMID: 36482790 DOI: 10.1002/adma.202209598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Revised: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Organic bulk heterojunction photodiodes (OPDs) attract attention for sensing and imaging. Their detectivity is typically limited by a substantial reverse bias dark current density (Jd ). Recently, using thermal admittance or spectral photocurrent measurements, Jd has been attributed to thermal charge generation mediated by mid-gap states. Here, the temperature dependence of Jd in state-of-the-art OPDs is reported with Jd down to 10-9 mA cm-2 at -0.5 V bias. For a variety of donor-acceptor bulk-heterojunction blends it is found that the thermal activation energy of Jd is lower than the effective bandgap of the blends, by ca. 0.3 to 0.5 eV, but higher than expected for mid-gap states. Ultra-sensitive sub-bandgap photocurrent spectroscopy reveals that the minimum photon energy for optical charge generation in OPDs correlates with the dark current thermal activation energy. The dark current in OPDs is attributed to thermal charge generation at the donor-acceptor interface mediated by intra-gap states near the band edges.
Collapse
Affiliation(s)
- Xiao Ma
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Haijun Bin
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Bas T van Gorkom
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Tom P A van der Pol
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Matthew J Dyson
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Christ H L Weijtens
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Marco Fattori
- Integrated Circuits, Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Stefan C J Meskers
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | | | - Daniel Tordera
- TNO/Holst Centre, High Tech Campus 31, Eindhoven, 5656 AE, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, C/ Catedrático J. Beltrán 2, Paterna, 46980, Spain
| | - René A J Janssen
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
- Dutch Institute for Fundamental Energy Research, De Zaale 20, Eindhoven, 5612 AJ, The Netherlands
| | - Gerwin H Gelinck
- Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
- TNO/Holst Centre, High Tech Campus 31, Eindhoven, 5656 AE, The Netherlands
| |
Collapse
|
11
|
Shan T, Hou X, Yin X, Guo X. Organic photodiodes: device engineering and applications. FRONTIERS OF OPTOELECTRONICS 2022; 15:49. [PMID: 36637681 PMCID: PMC9763529 DOI: 10.1007/s12200-022-00049-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 08/09/2022] [Indexed: 06/17/2023]
Abstract
Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.
Collapse
Affiliation(s)
- Tong Shan
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiao Hou
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaokuan Yin
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaojun Guo
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
| |
Collapse
|
12
|
Ollearo R, Caiazzo A, Li J, Fattori M, van Breemen AJJM, Wienk MM, Gelinck GH, Janssen RAJ. Multidimensional Perovskites for High Detectivity Photodiodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2205261. [PMID: 36000490 DOI: 10.1002/adma.202205261] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Revised: 07/19/2022] [Indexed: 06/15/2023]
Abstract
Low-dimensional perovskites attract increasing interest due to tunable optoelectronic properties and high stability. Here, it is shown that perovskite thin films with a vertical gradient in dimensionality result in graded electronic bandgap structures that are ideal for photodiode applications. Positioning low-dimensional, vertically-oriented perovskite phases at the interface with the electron blocking layer increases the activation energy for thermal charge generation and thereby effectively lowers the dark current density to a record-low value of 5 × 10-9 mA cm-2 without compromising responsivity, resulting in a noise-current-based specific detectivity exceeding 7 × 1012 Jones at 600 nm. These multidimensional perovskite photodiodes show promising air stability and a dynamic range over ten orders of magnitude, and thus represent a new generation of high-performance low-cost photodiodes.
Collapse
Affiliation(s)
- Riccardo Ollearo
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Alessandro Caiazzo
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Junyu Li
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Marco Fattori
- Integrated Circuits, Department of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | | | - Martijn M Wienk
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
| | - Gerwin H Gelinck
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
- TNO at Holst Centre, High Tech Campus 31, Eindhoven, 5656 AE, The Netherlands
| | - René A J Janssen
- Molecular Materials and Nanosystems and Institute of Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB, The Netherlands
- Dutch Institute for Fundamental Energy Research, De Zaale 20, Eindhoven, 5612 AJ, The Netherlands
| |
Collapse
|
13
|
Cao H, Si Y, Chen Y, Liang Q, Wu H. Double-Side Selective Spectral Response Organic Photodetectors for Demultiplexing Optical Signals. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34926-34936. [PMID: 35866512 DOI: 10.1021/acsami.2c07924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Selective spectral response photodetectors (PDs) capable of accurately capturing the color of images have broad applications in industry and academia. Here, we demonstrate filter-free, wavelength-selective detection organic photodetectors (OPDs) with two distinct response ranges and having the planar bilayer heterojunction device structure by employing either a (semi-)transparent anode or a cathode as the incident light window. The resultant OPDs exhibit a responsivity of 51 mA W-1 in the range 300-650 nm and 11 mA W-1 in the range 650-850 nm under top illumination condition. Similarly, the devices show a responsivity of 2 mA W-1 for the short-wavelength region and 131 mA W-1 for the long-wavelength region when under bottom illumination condition, indicating a high responsivity ratio that meets the requirements for selective detection. Hence, our individual device not only works in either visible or NIR range but also provides narrowband detection with spectral widths down to 100 nm in the NIR range. The working mechanism of spectral selectivity is identified through quantitative analysis of the external quantum efficiency (EQE) spectra using optical modeling when compared to the OPDs with bulk heterojunction structure, thus clarifying the general validity of the device design concept. Finally, our OPDs can demultiplex intermixed optical signals from the light-communication system successfully. Our results should inspire new studies on the device design concept and new applications of OPDs.
Collapse
Affiliation(s)
- Huan Cao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Yichuan Si
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Yihui Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Quanbin Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Hongbin Wu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| |
Collapse
|
14
|
Kim J, Kang J, Jung IH. Synthesis and characterization of a copper(
II
) phthalocyanine‐based dye for organic photodetectors. B KOREAN CHEM SOC 2022. [DOI: 10.1002/bkcs.12595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Junho Kim
- Department of Energy Engineering Hanyang University Seoul Republic of Korea
| | - Jinhyeon Kang
- Department of Organic and Nano Engineering, and Human‐Tech Convergence Program Hanyang University Seoul Republic of Korea
| | - In Hwan Jung
- Department of Organic and Nano Engineering, and Human‐Tech Convergence Program Hanyang University Seoul Republic of Korea
| |
Collapse
|
15
|
Song Y, Zhong Z, He P, Yu G, Xue Q, Lan L, Huang F. Doping Compensation Enables High-Detectivity Infrared Organic Photodiodes for Image Sensing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201827. [PMID: 35561337 DOI: 10.1002/adma.202201827] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 04/16/2022] [Indexed: 06/15/2023]
Abstract
Infrared organic photodiodes have gained increasing attention due to their great application potentials in night vision, optical communication, and all-weather imaging. However, the commonly occurring high dark current and low detectivity impede infrared photodetectors from portable applications at room temperature. Herein, an efficient and generic doping compensation strategy is developed to improve the detectivity of infrared organic photodiodes. A series of n-type organic semiconductors is investigated, and it is found that doping compensation strategy not only reduces the trap density of states and dark currents, but also restrains the nonradiative recombination with improved charge transport and collection. As a result, an ultralow noise spectral density of 8 × 10-15 A Hz-1/2 as well as a high specific detectivity over 1013 Jones in 780-1070 nm is achieved at room temperature. More importantly, the high-performance infrared organic photodiodes can be successfully applied in high-pixel-density image arrays without patterning sensing layers. These findings provide important compensation design insights that will be crucial to further improve the performance of infrared organic photodiodes in the future.
Collapse
Affiliation(s)
- Yu Song
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Zhiming Zhong
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Penghui He
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Gang Yu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Qifan Xue
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Linfeng Lan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Fei Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| |
Collapse
|
16
|
Eun HJ, Lee H, Shim Y, Seo GU, Lee AY, Park JJ, Heo J, Park S, Kim JH. Strain-durable dark current in near-infrared organic photodetectors for skin-conformal photoplethysmographic sensors. iScience 2022; 25:104194. [PMID: 35479416 PMCID: PMC9035714 DOI: 10.1016/j.isci.2022.104194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Revised: 03/02/2022] [Accepted: 03/30/2022] [Indexed: 12/04/2022] Open
Abstract
Sensitive detection of near-infrared (NIR) light is applicable to variety of optical, chemical, and biomedical sensors. Of these diverse applications, NIR photodetectors have been used as a key component for photoplethysmography (PPG) sensors. In particular, because NIR organic photodetectors (OPDs) enable fabrication of stretchable and skin-conformal PPG sensors, they are attaining tremendously increasing interest in both academia and industry. Herein, we report strain-durable and highly sensitive NIR OPDs using an organic bulk heterojunction (BHJ) layer. For effective suppression of dark current, we employed BHJ combination consisting of PTB7-Th:Y6 which forms high energy barrier against transport-injected holes. The optimized OPDs exhibited high specific detectivity up to 2.2 × 1012 Jones at 800 nm. By constructing the devices on the parylene substrates, we successfully demonstrated stretchable NIR OPDs and high-performance skin-conformal PPG sensors. Significant reduction of dark current was achieved from PTB7-Th:Y6 NIR OPDs The developed OPD exhibited strain-durable dark current OPDs efficiently operated on ultra-thin substrates Skin-conformal PPG sensors were demonstrated based on the developed OPDs
Collapse
Affiliation(s)
- Hyeong Ju Eun
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
| | - Hanbee Lee
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Yeongseok Shim
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Gyeong Uk Seo
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
| | - Ah Young Lee
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
| | - Jong Jin Park
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
| | - Junseok Heo
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
- Corresponding author
| | - Jong H. Kim
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
- Corresponding author
| |
Collapse
|
17
|
Yu YY, Peng YC, Chiu YC, Liu SJ, Chen CP. Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1378. [PMID: 35458086 PMCID: PMC9027253 DOI: 10.3390/nano12081378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 04/11/2022] [Accepted: 04/13/2022] [Indexed: 02/05/2023]
Abstract
With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM-based OPDs with a broad bandwidth (350-950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC71BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC71BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10-9 A cm-2) under reverse bias at -1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W-1, at -1.5 V), and high detectivity (1.10 × 1013 Jones, under a reverse bias of -1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.
Collapse
Affiliation(s)
- Yang-Yen Yu
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan;
| | - Yan-Cheng Peng
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan;
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei City 106335, Taiwan;
| | - Song-Jhe Liu
- Taiwan Thompson Painting Equipment Co., Ltd., New Taipei City 25169, Taiwan;
| | - Chih-Ping Chen
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan;
| |
Collapse
|
18
|
Ollearo R, Wang J, Dyson MJ, Weijtens CHL, Fattori M, van Gorkom BT, van Breemen AJJM, Meskers SCJ, Janssen RAJ, Gelinck GH. Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation. Nat Commun 2021; 12:7277. [PMID: 34907190 PMCID: PMC8671406 DOI: 10.1038/s41467-021-27565-1] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Accepted: 11/26/2021] [Indexed: 11/12/2022] Open
Abstract
Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBL-perovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10-8 mA cm-2 and 2 × 10-14 A Hz-1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.
Collapse
Affiliation(s)
- Riccardo Ollearo
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Junke Wang
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Matthew J. Dyson
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Christ H. L. Weijtens
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Marco Fattori
- grid.6852.90000 0004 0398 8763Integrated Circuits, Departments of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Bas T. van Gorkom
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Albert J. J. M. van Breemen
- grid.500333.60000 0004 0581 2681TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
| | - Stefan C. J. Meskers
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - René A. J. Janssen
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ,grid.434188.20000 0000 8700 504XDutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven, The Netherlands
| | - Gerwin H. Gelinck
- grid.6852.90000 0004 0398 8763Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ,grid.500333.60000 0004 0581 2681TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
| |
Collapse
|
19
|
Lan Z, Zhu F. Electrically Switchable Color-Selective Organic Photodetectors for Full-Color Imaging. ACS NANO 2021; 15:13674-13682. [PMID: 34319066 DOI: 10.1021/acsnano.1c04908] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The present full-color imaging techniques rely on the use of broadband inorganic photodetectors with dedicated color filters, which is one of the practical challenges for large-area, flexible, and high-solution imaging applications. The development of high-performance color-selective photodetectors is one of the key solutions to overcome this challenge. In this work, an electrically switchable color-selective organic photodetector (OPD) comprising a double organic bulk heterojunction structure has been developed for full-color imaging. The color-selective sensing capability over the visible spectrum ranges can be realized by controlling the bias across the OPD, achieving a high responsivity of ∼200 mA/W, a large linear dynamic range of 122 dB, a viewing angle of 120°, and a -3 dB cutoff frequency of >50 kHz. A full-color imaging function has been demonstrated using electrically switchable red-, green-, and blue-color selective OPD sensors with an excellent operational stability. The results of this work provide a practical solution for applications in high-resolution full-color imaging and artificial vision.
Collapse
Affiliation(s)
- Zhaojue Lan
- Department of Physics, Research Centre of Excellence for Organic Electronics, Institute of Advanced Materials, and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China
| | - Furong Zhu
- Department of Physics, Research Centre of Excellence for Organic Electronics, Institute of Advanced Materials, and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China
| |
Collapse
|
20
|
Ma R, Alifu N, Du Z, Chen S, Heng Y, Wang J, Zhu L, Ma C, Zhang X. Indocyanine Green-Based Theranostic Nanoplatform for NIR Fluorescence Image-Guided Chemo/Photothermal Therapy of Cervical Cancer. Int J Nanomedicine 2021; 16:4847-4861. [PMID: 34305398 PMCID: PMC8297555 DOI: 10.2147/ijn.s318678] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Accepted: 06/30/2021] [Indexed: 12/18/2022] Open
Abstract
Purpose Indocyanine green (ICG) is a favorable fluorescence nanoprobe for its strong NIR-I fluorescence emission and good photothermal capabilities. However, the stability and tumor targeting ability of ICG is poor, which limits its further applications. To further improve the photothermal and therapeutic efficiency of ICG, bovine serum albumin (BSA) was utilized to encapsulate the ICG and the chemotherapeutic drug doxorubicin (DOX) was loaded to form the BSA@ICG-DOX theranostic nanoplatform. Methods In this study, ICG-loaded BSA nanoparticles (NPs) and the BSA@ICG-DOX NPs were fabricated using reprecipitation methods. Next, the tumour inhibition ability and biocompatibility of the NPs were evaluated. A subcutaneous xenografted nude mice model was established and imaging guided synergetic therapy was performed with the assistance of BSA@ICG-DOX NPs under 808 nm laser irradiation. Results The BSA@ICG NPs exhibited strong NIR-I fluorescence emission, excellent photothermal properties, biocompatibility, and tumor targeting ability. To further improve the therapeutic efficiency, the chemotherapeutic drug doxorubicin (DOX) was loaded into the BSA@ICG NPs to form the BSA@ICG-DOX theranostic nanoplatform. The BSA@ICG-DOX NPs were spherical with an average size of ~194.7 nm. The NPs had high encapsulation efficiency (DOX: 19.96% and ICG: 60.57%), and drug loading content (DOX: 0.95% and ICG: 3.03%). Next, excellent NIR-I fluorescence and low toxicity of the BSA@ICG-DOX NPs were verified. Targeted NIR-I fluorescence images were obtained after intravenous injection of the NPs into the subcutaneous cervical tumors of the mice. Conclusion To improve the anti-tumor efficiency of the ICG@BSA NPs, the chemotherapeutic drug DOX was loaded into the BSA@ICG NPs. The NIR excitation/emission and targeted BSA@ICG-DOX NPs enables high-performance diagnosis and chemo/photothermal therapy of subcutaneous cervical tumors, providing a promising approach for further biomedical applications.
Collapse
Affiliation(s)
- Rong Ma
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Nuernisha Alifu
- State Key Laboratory of Pathogenesis, Prevention and Treatment of High Incidence Diseases in Central Asia School of Medical Engineering and Technology, Xinjiang Medical University, Urumqi, People's Republic of China
| | - Zhong Du
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Shuang Chen
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Youqiang Heng
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Jing Wang
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Lijun Zhu
- State Key Laboratory of Pathogenesis, Prevention and Treatment of High Incidence Diseases in Central Asia School of Medical Engineering and Technology, Xinjiang Medical University, Urumqi, People's Republic of China
| | - Cailing Ma
- State Key Laboratory of Pathogenesis, Prevention, and Treatment of High Incidence Diseases in Central Asia/Department of Gynecology, The First Affiliated Hospital of Xinjiang Medical University, Urumqi, People's Republic of China
| | - Xueliang Zhang
- State Key Laboratory of Pathogenesis, Prevention and Treatment of High Incidence Diseases in Central Asia School of Medical Engineering and Technology, Xinjiang Medical University, Urumqi, People's Republic of China
| |
Collapse
|