Hot Injection-Based Synthesized Colloidal CdSe Quantum Dots Embedded in Poly(4-vinylpyridine) (PVP) Matrix Form a Nanoscale Heterostructure for a High On-Off Ratio Memory-Switching Device

Trivial positional isomerism in ligands triggering different properties in Fe(II)-metallopolymers; design, synthesis, and characterization

The tunable molecular scaffold of organic moieties in metallopolymers generates variation in their properties, but what could be the minimal change that can produce variation in the properties of these macromolecules is still untouched. This research has meticulously explored the trivial change in the molecular scaffold of the ligand capable of making a mammoth difference in the nonvolatile memory and coordination pattern in two metallopolymers. The significance of this research lies in the fact that it demonstrates how a slight change in the organic building block can significantly alter the memristive and fluorescence properties of iron(II) metallopolymers, opening up new possibilities for their design and synthesis. Two novel positional isomeric ligands and their corresponding iron(II)-polymers were synthesized and thoroughly characterized using NMR, XRD, ATR-IR, FESEM, AFM and other techniques. Bright orange solid and solution state fluorescence was observed both in the solid and solution states for ligand L2 (3,3'-bis((E)-(pyridin-3-ylimino)methyl)-[1,1'-biphenyl]-4,4'-diol), while ligand L1 (3,3'-bis((E)-(pyridin-2-ylimino)methyl)-[1,1'-biphenyl]-4,4'-diol) showed blue fluorescence in the solution state only. A robust memristive property for Fe(II)-L1-poly with a high current ON/OFF ratio of 104, remarkable random access behaviour, and a long retention time greater than 35 000 seconds was observed while its counterpart was entirely silent. Both polymers showed solution-state electrochromism. These synthesised metallopolymers also showed good specific capacitance in the range of 50-60 F g-1 with a remarkable retention of 98% of the initial value even after 5000 charge-discharge cycles. The AFM and FESEM micrographs revealed the formation of long polymer nano-rods, which correlates with the NMR, ATR-IR, and XRD results. The difference in the properties of polymers generated by such a slight change in the organic building block forces different coordination patterns of these two ligands around the same central metal ion, and this is also evident in all the characterization methods.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.

Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr₃ (TAZ-H⁺ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr₃/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr₃@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (10^5.9: 10^3.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr₃)_n^n- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr₃@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr₃)_n^n- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)_nⁿ⁺ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.

Charge trapped CdS quantum dot embedded polymer matrix for a high speed and low power memristor

The data storage requirement in the digital world is increasing day by day with the advancement of the internet of things. In this respect, nonvolatile resistive random-access memory is an option that provides high density and low power data storage capabilities. In this work, zero-dimensional colloidal CdS quantum dots and a polymer composite at an appropriate ratio were used to fabricate a memristive device. Comparison with a pristine CdS quantum dot-based device reveals that a surrounding matrix around the quantum dots is needed for observing memristive behavior. The quantum dots embedded in the polymer matrix device showed extremely stable electrical switching behavior that can be operated for more than 300 cycles and 60 000 seconds. Moreover, the device needs extremely low power to operate at a very high speed. The smooth surface morphology dictates a charge trapping mechanism for the switching phenomenon; however, an interplay between different charge transport mechanisms leads to the fast switching and high on-off ratio of the device.

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity

The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:10^4.2:10^1.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV-vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.