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Zhao H, Zhang Y, Yao J. High performance CsBi 3I 10/PCBM bulk heterojunction perovskite photodetector. APPLIED OPTICS 2024; 63:1258-1264. [PMID: 38437305 DOI: 10.1364/ao.510980] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Accepted: 01/10/2024] [Indexed: 03/06/2024]
Abstract
Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using C s B i 3 I 10/p h e n y l-C 61-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at -2V bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that C s B i 3 I 10/P C B M bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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3
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Zhang F, Shao M, Wang C, Wen W, Shi W, Qin M, Huang H, Wei X, Guo Y, Liu Y. Photoinduced Nonvolatile Memory Transistor Based on Lead-Free Perovskite Incorporating Fused π-Conjugated Organic Ligands. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307326. [PMID: 37849381 DOI: 10.1002/adma.202307326] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 09/20/2023] [Indexed: 10/19/2023]
Abstract
Perovskites field-effect transistors (PeFETs) have been intensively investigated for their application in detector and synapse. However, synapse based on PeFETs is still very difficult to integrate excellent charge carrier transporting ability, photosensitivity, and nonvolatile memory effects into one device, which is very important for developing bionic electronic devices and edge computing. Here, two-dimensional (2D) perovskites are synthesized by incorporating fused π-conjugated pyrene-O-ethyl-ammonium (POE) ligands and a systematic study is conducted to obtain enhanced performance and reliable PeFETs. The optimized (POE)2 SnI4 transistors display the hole mobility over 0.3 cm2 V-1 s-1 , high repeatability, and operational stability. Meanwhile, the derived photo memory devices show remarkable photoresponse, with a switching ratio higher than 105 , high visible light responsivity (>4 × 104 A W-1 ), and stable storage-erase cycles, as well as competitive retention performance (104 s). The photoinduced memory behavior can be benefiting from the insulating nature of quantum-well in 2D perovskite under dark and its excellent light sensitivity. The excellent photo memory behaviors have been maintained after 40 days in a N2 atmosphere. Finally, a 2D perovskite-only transistors with a multi-level memory behavior (16 distinct states) is described by controlling incident light pulse. This work provides broader attention toward 2D perovskite and optoelectronic application.
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Affiliation(s)
- Fan Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Mingchao Shao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Chengyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wei Wen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wenkang Shi
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Mingcong Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haojie Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiaofang Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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Yun X, Nie J, Hu H, Zhong H, Xu D, Shi Y, Li H. Zero-Dimensional Tellurium-Based Organic-Inorganic Hybrid Halide Single Crystal with Yellow-Orange Emission from Self-Trapped Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:46. [PMID: 38202501 PMCID: PMC10780417 DOI: 10.3390/nano14010046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 12/19/2023] [Accepted: 12/21/2023] [Indexed: 01/12/2024]
Abstract
Organic-inorganic hybrid halides and their analogs that exhibit efficient broadband emission from self-trapped excitons (STEs) offers an unique pathway towards realization of highly efficient white light sources for lighting applications. An appropriate dilution of ns2 ions into a halide host is essential to produce auxiliary emissions. However, the realization of ns2 cation-based halides phosphor that can be excited by blue light-emitting diode (LED) is still rarely reported. In this study, a zero-dimensional Te-based single crystal (C8H20N)2TeCl6 was synthesized, which exhibits a yellow-orange emission centered at 600 nm with a full width at half maximum of 130 nm upon excitation under 437 nm. Intense electron-phonon coupling was confirmed in the (C8H20N)2TeCl6 single crystal and the light emitting mechanism is comprehensively discussed. The results of this study are pertinent to the emissive mechanism of Te-based hybrid halides and can facilitate discovery of unidentified metal halides with broadband excitation features.
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Affiliation(s)
- Xiangyan Yun
- Department of Physics, Beijing Technology and Business University, Beijing 100048, China
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jingheng Nie
- Guangdong Rare Earth Photofunctional Materials Engineering Technology Research Center, School of Chemistry and Environment, Jiaying University, Meizhou 514015, China
| | - Hanlin Hu
- Hoffman Institute of Advanced Materials, Shenzhen Polytechnic, Shenzhen 518060, China
| | - Haizhe Zhong
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Denghui Xu
- Department of Physics, Beijing Technology and Business University, Beijing 100048, China
| | - Yumeng Shi
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China;
| | - Henan Li
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China;
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5
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Wang S, Bidinakis K, Haese C, Hasenburg FH, Yildiz O, Ling Z, Frisch S, Kivala M, Graf R, Blom PWM, Weber SAL, Pisula W, Marszalek T. Modification of Two-Dimensional Tin-Based Perovskites by Pentanoic Acid for Improved Performance of Field-Effect Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207426. [PMID: 36908090 DOI: 10.1002/smll.202207426] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 02/17/2023] [Indexed: 06/08/2023]
Abstract
Understanding and controlling the nucleation and crystallization in solution-processed perovskite thin films are critical to achieving high in-plane charge carrier transport in field-effect transistors (FETs). This work demonstrates a simple and effective additive engineering strategy using pentanoic acid (PA). Here, PA is introduced to both modulate the crystallization process and improve the charge carrier transport in 2D 2-thiopheneethylammonium tin iodide ((TEA)2 SnI4 ) perovskite FETs. It is revealed that the carboxylic group of PA is strongly coordinated to the spacer cation TEAI and [SnI6 ]4- framework in the perovskite precursor solution, inducing heterogeneous nucleation and lowering undesired oxidation of Sn2+ during the film formation. These factors contribute to a reduced defect density and improved film morphology, including lower surface roughness and larger grain size, resulting in overall enhanced transistor performance. The reduced defect density and decreased ion migration lead to a higher p-channel charge carrier mobility of 0.7 cm2 V-1 s-1 , which is more than a threefold increase compared with the control device. Temperature-dependent charge transport studies demonstrate a mobility of 2.3 cm2 V-1 s-1 at 100 K due to the diminished ion mobility at low temperatures. This result illustrates that the additive strategy bears great potential to realize high-performance Sn-based perovskite FETs.
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Affiliation(s)
- Shuanglong Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | | | - Constantin Haese
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | | | - Okan Yildiz
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Zhitian Ling
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Sabine Frisch
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Milan Kivala
- Organisch-Chemisches Institut, Ruprecht-Karls-Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Robert Graf
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Paul W M Blom
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Stefan A L Weber
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, Duesbergweg 10-14, 55128, Mainz, Germany
| | - Wojciech Pisula
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, Lodz, 90-924, Poland
| | - Tomasz Marszalek
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
- Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, Lodz, 90-924, Poland
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6
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Chowdhury TH, Reo Y, Yusoff ARBM, Noh Y. Sn-Based Perovskite Halides for Electronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203749. [PMID: 36257820 PMCID: PMC9685468 DOI: 10.1002/advs.202203749] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Indexed: 06/16/2023]
Abstract
Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Towhid H. Chowdhury
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Youjin Reo
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
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7
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Byranvand MM, Zuo W, Imani R, Pazoki M, Saliba M. Tin-based halide perovskite materials: properties and applications. Chem Sci 2022; 13:6766-6781. [PMID: 35774180 PMCID: PMC9200135 DOI: 10.1039/d2sc01914k] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Accepted: 05/23/2022] [Indexed: 11/21/2022] Open
Abstract
Organic-inorganic hybrid halide perovskite materials have attracted considerable research interest, especially for photovoltaics. In addition, their scope has been extended towards light-emitting devices, photodetectors, or detectors. However, the toxicity of lead (Pb) element in perovskite compositions limits their applications. Therefore, a tremendous research effort on replacing is underway. More specifically, tin-based perovskites have shown the highest potential for this purpose. However, many challenges remain before these materials reach the goals of stability, safety, and eventually commercial application. This perspective considers many aspects and the critical development possibilities of tin-based perovskites, including drawbacks and challenges based on their physical properties. Additionally, it provides insights for future device applications that go beyond solar cells. Finally, the existing challenges and opportunities in tin-based perovskites are discussed.
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Affiliation(s)
- Mahdi Malekshahi Byranvand
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
- Helmholtz Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik Forschungszentrum Jülich 52425 Jülich Germany
| | - Weiwei Zuo
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Roghayeh Imani
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Meysam Pazoki
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
| | - Michael Saliba
- Institute for Photovoltaics (ipv), University of Stuttgart Pfafenwaldring 47 70569 Stuttgart Germany
- Helmholtz Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik Forschungszentrum Jülich 52425 Jülich Germany
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8
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Yang Y, Sun H, Zhao X, Xian D, Han X, Wang B, Wang S, Zhang M, Zhang C, Ye X, Ni Y, Tong Y, Tang Q, Liu Y. High-Mobility Fungus-Triggered Biodegradable Ultraflexible Organic Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105125. [PMID: 35257518 PMCID: PMC9069197 DOI: 10.1002/advs.202105125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 02/04/2022] [Indexed: 05/31/2023]
Abstract
Biodegradable organic field-effect transistors (OFETs) have drawn tremendous attention for potential applications such as green electronic skins, degradable flexible displays, and novel implantable devices. However, it remains a huge challenge to simultaneously achieve high mobility, stable operation and controllable biodegradation of OFETs, because most of the widely used biodegradable insulating materials contain large amounts of hydrophilic groups. Herein, it is firstly proposed fungal-degradation ultraflexible OFETs based on the crosslinked dextran (C-dextran) as dielectric layer. The crosslinking strategy effectively eliminates polar hydrophilic groups and improves water and solvent resistance of dextran dielectric layer. The device with spin-coated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor and C-dextran dielectric exhibits the highest mobility up to 7.72 cm2 V-1 s-1 , which is higher than all the reported degradable OFETs. Additionally, the device still maintains high performance regardless of in an environment humidity up to 80% or under the extreme bending radius of 0.0125 mm. After completion of their mission, the device can be controllably biodegraded by fungi without any adverse environmental effects, promoting the natural ecological cycles with the concepts of "From nature, for nature". This work opens up a new avenue for realizing high-performance biodegradable OFETs, and advances the process of the "green" electrical devices in practical applications.
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Affiliation(s)
- Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Hongying Sun
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Da Xian
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xu Han
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Bin Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Cong Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
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9
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Lin CH, Hu L, Guan X, Kim J, Huang CY, Huang JK, Singh S, Wu T. Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108616. [PMID: 34995372 DOI: 10.1002/adma.202108616] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.
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Affiliation(s)
- Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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10
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Liu Y, Chen PA, Qiu X, Guo J, Xia J, Wei H, Xie H, Hou S, He M, Wang X, Zeng Z, Jiang L, Liao L, Hu Y. Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices. iScience 2022; 25:104109. [PMID: 35402868 PMCID: PMC8983347 DOI: 10.1016/j.isci.2022.104109] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Revised: 02/25/2022] [Accepted: 03/14/2022] [Indexed: 11/15/2022] Open
Abstract
Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)2SnI4 by incorporating SnI4 in the precursor solutions. It is observed that Sn4+ produces p-doping effect on the perovskite, which increases the electrical conductivity by 105 times. The dopant SnI4 is also found to improve the film morphology of (PEA)2SnI4, leading to reduced trap states. This doping technique allows us to improve the room temperature mobility of (PEA)2SnI4 field-effect transistors from 0.25 to 0.68 cm2 V-1 s-1 thanks to reduced trapping effects in the doped devices. Moreover, the doping technique enables the characterization and improvement of the thermoelectric performance of (PEA)2SnI4 films, which show a high power factor of 3.92 μW m-1 K-2 at doping ratio of 5 mol %.
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Affiliation(s)
- Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shijin Hou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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Design and Modelling of Eco-Friendly CH3NH3SnI3-Based Perovskite Solar Cells with Suitable Transport Layers. ENERGIES 2021. [DOI: 10.3390/en14217200] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
An ideal n-i-p perovskite solar cell employing a Pb free CH3NH3SnI3 absorber layer was suggested and modelled. A comparative study for different electron transport materials has been performed for three devices keeping CuO hole transport material (HTL) constant. SCAPS-1D numerical simulator is used to quantify the effects of amphoteric defect based on CH3NH3SnI3 absorber layer and the interface characteristics of both the electron transport layer (ETL) and hole transport layer (HTL). The study demonstrates that amphoteric defects in the absorber layer impact device performance significantly more than interface defects (IDL). The cell performed best at room temperature. Due to a reduction in Voc, PCE decreases with temperature. Defect tolerance limit for IL1 is 1013 cm−3, 1016 cm−3 and 1012 cm−3 for structures 1, 2 and 3 respectively. The defect tolerance limit for IL2 is 1014 cm−3. With the proposed device structure FTO/PCBM/CH3NH3SnI3/CuO shows the maximum efficiency of 25.45% (Voc = 0.97 V, Jsc = 35.19 mA/cm2, FF = 74.38%), for the structure FTO/TiO2/CH3NH3SnI3/CuO the best PCE is obtained 26.92% (Voc = 0.99 V, Jsc = 36.81 mA/cm2, FF = 73.80%) and device structure of FTO/WO3/CH3NH3SnI3/CuO gives the maximum efficiency 24.57% (Voc = 0.90 V, Jsc = 36.73 mA/cm2, FF = 74.93%) under optimum conditions. Compared to others, the FTO/TiO2/CH3NH3SnI3/CuO system provides better performance and better defect tolerance capacity.
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