Enhanced Weak-Light Detection of Perovskite Photodetectors through Perovskite/Hole-Transport Material Interface Treatment

2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging

2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.

2D/3D Perovskite Photodetectors with High Response Frequency and Improved Stability Based on Thiophene-2-ethylamine and Dual Additives

Organic-inorganic lead halide perovskite materials have received great attention in recent years. However, the poor stability of these materials severely limits the commercial application of perovskite devices. Here, we used thiophene-2-ethylammonium iodide (TEAI) material as the organic spacer NH₄SCN and NH₄Cl as the dual additives to realize high-stability two-dimensional (2D)/three-dimensional (3D) perovskite thin films for perovskite photodetectors. Then, we investigated different effects of the dual additives on the orientation and crystallinity of the perovskite films. At room temperature, the optimized 2D/3D perovskite photodetectors exhibit good performance with high external quantum efficiency (EQE) (72%), large responsivity (0.36 A/W), high detectivity (2.46 × 10¹² Jones at the bias of 0 V), high response frequency (1.7 MHz), and improved stability (retains 90% photocurrent after 2000 h storage in RT and 10% RH conditions). Based on these devices, a dual-channel optical transport system and a light-intensity adder are achieved. The results of this study indicate that, with a simple process, the TEAI and dual-additives based 2D/3D perovskite photodetectors have promising applications in light-intensity adder and optical communication systems.

Incorporating an Aromatic Diammonium To Assemble Bilayered Dion-Jacobson Perovskite Crystals for Weak Light Detection

Two-dimensional (2D) Dion-Jacobson (DJ) hybrid perovskites with exceptional stability and enhanced out-of-plane carrier transport are regarded as one of the competive candidates for constructing next-generation photodetectors. However, the studies of DJ hybrid perovskites on weak light detection remain scarce, and the devices based on them usually show relatively poor weak light detection ability, with a detection limit of around μW/cm². Herein, a new DJ hybrid perovskite (3AMPY)(MA)Pb₂Br₇ [3AMPY is 3-(aminomethyl)pyridinium, and MA is methylammonium] with short interlayer spacing and more lattice rigidity is obtained. The devices based on (3AMPY)(MA)Pb₂Br₇ crystals exhibit an ultrahigh sensibility to weak light at 377 and 405 nm, with an extremely low detection limit of ∼70 nW/cm². Moreover, the on/off ratios and detectivity of the devices can reach ∼10³ and ∼10¹² Jones at both 377 and 405 nm, respectively. This work highlights great potential of DJ hybrid perovskites toward weak light detection.

Air-Stable Flexible Photodetector Based on MXene-Cs3Bi2I9 Microplate Schottky Junctions for Weak-Light Detection

Weak-light detection technology is widely used in various fields, including industry, high-energy physics, precision analysis, and reflection imaging. Metal-semiconductor-metal (MSM) photodetectors demonstrate high detectivity and high response speed and are one of the suitable structures for the preparation of weak-light detectors. However, traditional MSM photodetectors tend to exhibit high dark currents, which are not conducive to performance improvement. Here, a MXene-Cs₃Bi₂I₉-MXene weak-light detector is proposed. Based on the MXene-Cs₃Bi₂I₉ Schottky junctions, the dark current is reduced by 2 orders of magnitude and the responsivity is significantly improved compared with the traditional Cr/Au-Cs₃Bi₂I₉-Cr/Au MSM photodetector. The device demonstrates excellent photodetection capacity with a photoresponsivity of 6.45 A W^-1, a specific detectivity of 9.45 × 10¹¹ Jones, and a fast response speed of 0.27/2.32 ms. Especially, the device yielded a superior weak-light detectable limit of 10.66 nW cm^-2 and demonstrated excellent optical communication capability. Moreover, such a flexible device shows little degradation in photodetection performance after extreme bending for 4500 cycles, proving remarkable bending endurance and flexibility. The obtained results highlight the great potential of such Cs₃Bi₂I₉/MXene devices as a stable and environmentally friendly candidate for weak-light detection.

High-Efficiency and Stable Perovskite Photodetectors with an F4-TCNQ-Modified Interface of NiOx and Perovskite Layers

Nickel oxide (NiO_x), a typical p-type semiconductor, is emerging as the most promising hole transport layer material. However, the inferior interfacial contact of the NiO_x/perovskite interface has limited the improvement of the performance of photodetectors (PDs). In this work, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is introduced to modify the NiO_x/perovskite interface to prepare high-performance PDs. This study shows that the F4-TCNQ layer interacts with the NiO_x/perovskite layers. It can increase the Ni³⁺/Ni²⁺ ratio and then enhance the hole extraction and charge carrier mobility; on the contrary, it can form a new Lewis adduct and passivate the undercoordinated Pb²⁺ ions. Furthermore, with the F4-TCNQ modification, the perovskite film exhibits good thermal stability and photostability. The PDs demonstrate excellent photoelectric properties and long-term stability in the atmosphere. This finding provides a simple and efficient way to further develop the NiO_x/perovskite interface.

Fully Scalable and Stable CsPbI2Br Solar Cells Realized by an All-Spray-Coating Process

Spray-coating is a scalable and time-efficient technique for the development of large-area metal halide perovskite (MHP) solar cells. However, a bottleneck still exists toward the development of fully scalable n-i-p-type MHP solar cells particularly on spray-coating the hole transporting layer (HTL). Here, we present a reliable strategy of spray-coating the HTL by using MoO₂ nanoparticles with small amounts of poly(triarylamine) (PTAA) binders to ensure uniform coverage and efficient charge extraction. By spray-coating all layers except the Au electrode, we achieve high and scalable efficiencies of 14.26 and 13.88% for CsPbI₂Br unit cells (0.12 cm²) and submodules (25 cm²), respectively. We then extend toward an all-spray-coating process by spray-coating carbon black as the top counter electrode, resulting in a submodule efficiency of 10.08%. Finally, we also demonstrate good long-term stability of the submodules under damp heat conditions (85 °C/85% relative humidity) over 1000 h.

Antisolvent-Processed One-Dimensional Ternary Rubidium Copper Bromine Microwires for Sensitive and Flexible Ultraviolet Photodetectors

Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb₂CuBr₃ single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb₂CuBr₃ MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 10¹¹ Jones, responsivity of 113.64 mA W^-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb₂CuBr₃ for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.