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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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Kim S, Jeon Y, Lee EK, Kim YJ, Kim CH, Yoo H. Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction. NANO LETTERS 2024; 24:2025-2032. [PMID: 38295356 DOI: 10.1021/acs.nanolett.3c04671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/02/2024]
Abstract
Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2',3'-f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 × 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior.
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Affiliation(s)
- Seongjae Kim
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Yunchae Jeon
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Eun Kwang Lee
- Department of Chemical Engineering, Pukyong National University, Busan 48513, Republic of Korea
| | - Yeong Jae Kim
- Ceramic Total Solution Center, Korea Institute of Ceramic Engineering and Technology, Icheon 17303, Republic of Korea
| | - Chang-Hyun Kim
- School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, Ontario K1N 6N5, Canada
| | - Hocheon Yoo
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
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Uddin MG, Das S, Shafi AM, Wang L, Cui X, Nigmatulin F, Ahmed F, Liapis AC, Cai W, Yang Z, Lipsanen H, Hasan T, Yoon HH, Sun Z. Broadband miniaturized spectrometers with a van der Waals tunnel diode. Nat Commun 2024; 15:571. [PMID: 38233431 PMCID: PMC10794200 DOI: 10.1038/s41467-024-44702-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 01/02/2024] [Indexed: 01/19/2024] Open
Abstract
Miniaturized spectrometers are of immense interest for various on-chip and implantable photonic and optoelectronic applications. State-of-the-art conventional spectrometer designs rely heavily on bulky dispersive components (such as gratings, photodetector arrays, and interferometric optics) to capture different input spectral components that increase their integration complexity. Here, we report a high-performance broadband spectrometer based on a simple and compact van der Waals heterostructure diode, leveraging a careful selection of active van der Waals materials- molybdenum disulfide and black phosphorus, their electrically tunable photoresponse, and advanced computational algorithms for spectral reconstruction. We achieve remarkably high peak wavelength accuracy of ~2 nanometers, and broad operation bandwidth spanning from ~500 to 1600 nanometers in a device with a ~ 30×20 μm2 footprint. This diode-based spectrometer scheme with broadband operation offers an attractive pathway for various applications, such as sensing, surveillance and spectral imaging.
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Affiliation(s)
- Md Gius Uddin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Abde Mayeen Shafi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Lei Wang
- Key Lab of Education Ministry for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaoqi Cui
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Fedor Nigmatulin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Faisal Ahmed
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Andreas C Liapis
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland
| | - Weiwei Cai
- Key Lab of Education Ministry for Power Machinery and Engineering, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zongyin Yang
- College of Information Science and Electronic Engineering and State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
| | - Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hoon Hahn Yoon
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- Department of Semiconductor Engineering, School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland.
- QTF Centre of Excellence, Aalto University, Aalto, 00076, Finland.
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Jeong Y, Kim T, Cho H, Ahn J, Hong S, Hwang DK, Im S. Negative Photoresponse Switching via Electron-Hole Recombination at The Type III Junction of MoTe 2 Channel/SnS 2 Top Layer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304599. [PMID: 37506305 DOI: 10.1002/adma.202304599] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/24/2023] [Indexed: 07/30/2023]
Abstract
Extensive study on 2D van der Waals (vdW) heterojunctions has primarily focused on PN diodes for fast-switching photodetection, while achieving the same from 2D channel phototransistors is rare despite their other advantages. Here, a high-speed phototransistor featuring a type III junction between p-MoTe2 channel and n-SnS2 top layer is designed. The photodetecting device operates with a basis of negative photoresponse (NPR), which originates from the recombination of photoexcited electrons in n-SnS2 and accumulated holes in the p-MoTe2 channel. For the NPR to occur, high-energy photons capable of exciting SnS2 (band gap ≈2.2 eV) are found to be effective because lower-energy photons simply penetrate the SnS2 top layer only to excite MoTe2 , leading to normal positive photoresponse (PPR) which is known to be slow due to the photogating effects. The NPR transistor showcases 0.5 ms fast photoresponses and a high responsivity over 5000 A W-1 . More essentially, such carrier recombination mechanism is clarified with three experimental evidences. The phototransistor is finally modified with Au contact on n-SnS2 , to be a more practical device displaying voltage output. Three different photo-logic states under blue, near infrared (NIR), and blue-NIR mixed photons are demonstrated using the voltage signals.
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Affiliation(s)
- Yeonsu Jeong
- van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
- Institut de Science et d'Ingénierie Supramoléculaires, University of Strasbourg, UMR 7006, 8 Allée Gaspard Monge, Strasbourg, 67000, France
| | - Taewook Kim
- van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Hyunmin Cho
- van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jongtae Ahn
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Sungjae Hong
- van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Seongil Im
- van der Waals Materials Research Center, Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
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Zhang J, Duan L, Zhou N, Zhang L, Shang C, Xu H, Yang R, Wang X, Li X. Modulating the Function of GeAs/ReS 2 van der Waals Heterojunction with its Potential Application for Short-Wave Infrared and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303335. [PMID: 37154239 DOI: 10.1002/smll.202303335] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Indexed: 05/10/2023]
Abstract
Van der Waals heterojunction (vdWs) of 2D materials with integrated or extended superior characteristics, opening up new opportunities in functional electronic and optoelectric device applications. Exploring methods to achieve multifunctional vdWs heterojunction devices is one of the most promising prospects in this area. Herein, a diverse function of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes are realized in GeAs/ReS2 heterojunction by modulating the doping level of GeAs. The tunneling diode presents an interesting trend forward negative differential resistance (NDR) behavior which may facilitate the application of multi-value logic. More importantly, the GeAs/ReS2 forward rectifying diode exhibits highly sensitive photodetection in the wide-spectrum range up to 1550 nm corresponding to a short-wave infrared (SWIR) region. In addition, as two strong anisotropic 2D materials of GeAs and ReS2 , the heterojunction exhibits strong polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7. This work provides an effective strategy to achieve multifunctional 2D vdW heterojunction devices and develops more possibilities to broaden their functionalities and applications.
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Affiliation(s)
- Jianbin Zhang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Linfan Duan
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Lihui Zhang
- Xi'an Thermal Power Research Institute Co., Ltd., Xi'an, 710054, P. R. China
| | - Conghui Shang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Rusen Yang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Paul C. Lauterbur Research Center for Biomedical Imaging, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
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6
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Kim JH, Kim SG, Kim SH, Han KH, Kim J, Yu HY. Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37339325 DOI: 10.1021/acsami.3c03213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2023]
Abstract
Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.
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Affiliation(s)
- Jong-Hyun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Korea
| | - Kyu-Hyun Han
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
| | - Jiyoung Kim
- Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080-3021, United States
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
- School of Electrical Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea
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Yu Y, Shen T, Long H, Zhong M, Xin K, Zhou Z, Wang X, Liu YY, Wakabayashi H, Liu L, Yang J, Wei Z, Deng HX. Doping Engineering in the MoS 2 /SnSe 2 Heterostructure toward High-Rejection-Ratio Solar-Blind UV Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206486. [PMID: 36047665 DOI: 10.1002/adma.202206486] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Revised: 08/19/2022] [Indexed: 06/15/2023]
Abstract
The intentionally designed band alignment of heterostructures and doping engineering are keys to implement device structure design and device performance optimization. According to the theoretical prediction of several typical materials among the transition metal dichalcogenides (TMDs) and group-IV metal chalcogenides, MoS2 and SnSe2 present the largest staggered band offset. The large band offset is conducive to the separation of photogenerated carriers, thus MoS2 /SnSe2 is a theoretically ideal candidate for fabricating photodetector, which is also verified in the experiment. Furthermore, in order to extend the photoresponse spectrum to solar-blind ultraviolet (SBUV), doping engineering is adopted to form an additional electron state, which provides an extra carrier transition channel. In this work, pure MoS2 /SnSe2 and doped MoS2 /SnSe2 heterostructures are both fabricated. In terms of the photoelectric performance evaluation, the rejection ratio R254 /R532 of the photodetector based on doped MoS2 /SnSe2 is five orders of magnitude higher than that of pure MoS2 /SnSe2 , while the response time is obviously optimized by 3 orders. The results demonstrate that the combination of band alignment and doping engineering provides a new pathway for constructing SBUV photodetectors.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoran Long
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyu Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Hitoshi Wakabayashi
- EE Department, School of Engineering, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
| | - Liyuan Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Yuan Y, Yu H, Podpirka A, Ostdiek P, Srinivasan R, Ramanathan S. Negative Differential Resistance in Oxygen-ion Conductor Yttria-stabilized Zirconia for Extreme Environment Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:40116-40125. [PMID: 35997538 DOI: 10.1021/acsami.2c09944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Oxygen-ion conductors have traditionally been studied in the context of high temperature (≈ 873 to 1773 K) energy conversion and sensor technologies. However, there is growing interest in exploring ion-based electronics for harsh environments (400 to 573 K) that represents an emerging field. Here, we utilize a blocking electrode to modify the interface properties of oxygen-ion conducting yttria-stabilized zirconia (YSZ) thin film electrochemical cells. The modified YSZ cell exhibits negative differential resistance (NDR) in the current-voltage curves at 543 K in the air. A double-sweep method and analysis of the scan-rate dependence of the j-V characteristics clearly suggest that the NDR behavior is formed by the reduction reaction of adsorbed oxygen or platinum oxide at the YSZ/Pt interface. A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect, we demonstrate a proof-of-concept switchable ternary inverter by interfacing with a silicon transistor. Oxygen-ion conductors and their interfaces offer new directions to design electronics for extreme environments.
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Affiliation(s)
- Yifan Yuan
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Adrian Podpirka
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Paul Ostdiek
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Rengaswamy Srinivasan
- Applied Physics Laboratory, Johns Hopkins University, Laurel, Maryland 20723, United States
| | - Shriram Ramanathan
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
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9
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Khan MA, Khan MF, Rehman S, Patil H, Dastgeer G, Ko BM, Eom J. The non-volatile electrostatic doping effect in MoTe 2 field-effect transistors controlled by hexagonal boron nitride and a metal gate. Sci Rep 2022; 12:12085. [PMID: 35840642 PMCID: PMC9287407 DOI: 10.1038/s41598-022-16298-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2022] [Accepted: 07/07/2022] [Indexed: 11/09/2022] Open
Abstract
The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe2, which can be changed to n-type by charging a hexagonal boron nitride (h-BN) substrate through the application of a writing voltage using a metal gate under deep ultraviolet light. The n-type part of MoTe2 can be obtained locally using the metal gate pattern, whereas the other parts remain p-type. Furthermore, we can control the transition rate to n-type by applying a different writing voltage (i.e., − 2 to − 10 V), where the n-type characteristics become saturated beyond a certain writing voltage. Thus, MoTe2 was electrostatically doped by a charged h-BN substrate, and it was found that a thicker h-BN substrate was more efficiently photocharged than a thinner one. We also fabricated a p–n diode using a 0.8 nm-thick MoTe2 flake on a 167 nm-thick h-BN substrate, which showed a high rectification ratio of ~ 10−4. Our observations pave the way for expanding the application of TMD-based FETs to diode rectification devices, along with optoelectronic applications.
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Affiliation(s)
- Muhammad Asghar Khan
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | | | - Shania Rehman
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.,Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea
| | - Harshada Patil
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea.,Department of Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Korea
| | - Ghulam Dastgeer
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Byung Min Ko
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea
| | - Jonghwa Eom
- Department of Physics and Astronomy, and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul, 05006, Korea.
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10
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Wu W, Li D, Xu Y, Zeng XC. Two-Dimensional GeC 2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio. J Phys Chem Lett 2021; 12:11488-11496. [PMID: 34793176 DOI: 10.1021/acs.jpclett.1c03477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we present that 2D tetrahex-GeC2 materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC2 monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC2 monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 105 for the tetrahex-GeC2 monolayer. A striking negative differential conductance arises with the maximum Ipeak/Ivalley on the order of 104 under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC2 monolayer. Overall, the 2D tetrahex-GeC2 monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.
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Affiliation(s)
- Wenjun Wu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Dongze Li
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Yuehua Xu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, Jiangsu China
| | - Xiao Cheng Zeng
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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