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Raffaelle P, Wang GT, Shestopalov AA. Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55139-55149. [PMID: 37965814 PMCID: PMC10694808 DOI: 10.1021/acsami.3c13269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Revised: 10/26/2023] [Accepted: 10/30/2023] [Indexed: 11/16/2023]
Abstract
The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.
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Affiliation(s)
- Patrick
R. Raffaelle
- Department
of Chemical Engineering, Hajim School of Engineering and Applied Sciences, University of Rochester, Rochester, New York 14627, United States
| | - George T. Wang
- Sandia
National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Alexander A. Shestopalov
- Department
of Chemical Engineering, Hajim School of Engineering and Applied Sciences, University of Rochester, Rochester, New York 14627, United States
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Mameli A, Teplyakov AV. Selection Criteria for Small-Molecule Inhibitors in Area-Selective Atomic Layer Deposition: Fundamental Surface Chemistry Considerations. Acc Chem Res 2023. [PMID: 37463289 DOI: 10.1021/acs.accounts.3c00221] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
ConspectusAtomically precise and highly selective surface reactions are required for advancing microelectronics fabrication. Advanced atomic processing approaches make use of small molecule inhibitors (SMI) to enable selectivity between growth and nongrowth surfaces. The selectivity between growth and nongrowth substrates is eventually lost for any known combinations, because of defects, new defect formation, and simply because of a Boltzmann distribution of molecular reactivities on surfaces. The selectivity can then be restored by introducing etch-back correction steps. Most recent developments combine the design of highly selective combinations of growth and nongrowth substrates with atomically precise cycles of deposition and etching methods. At that point, a single additional step is often used to passivate the unwanted defects or selected surface chemical sites with SMI. This step is designed to chemically passivate the reactive groups and defects of the nongrowth substrates both before and/or during the deposition of material onto the growth substrate. This approach requires applications of the fundamental knowledge of surface chemistry and reactivity of small molecules to effectively block deposition on nongrowth substrates and to not substantially affect deposition on the growth surface. Thus, many of the concepts of classical surface chemistry that had been developed over several decades can be applied to design such small molecule inhibitors. This article will outline the approaches for such design.This is especially important now, since the ever-increasing number of applications of this concept still rely on trial-and-error approaches in selecting SMI. At the same time, there is a very substantial breadth of surface chemical reactivity analysis that can be put to use in this process that will relate the effectiveness of a potential SMI on any combination of surfaces with the following: selectivity; chemical stability of a molecule on a specific surface; volatility; steric hindrance, geometry, packing, and precursor of choice for material deposition; strength of adsorption as detailed by interdisplacement to determine the most stable SMI; fast attachment reaction kinetics; and minimal number of various binding modes.The down-selection of the SMI from the list of chemicals that satisfy the preliminary criteria will be decided based on optimal combinations of these requirements. Although the specifics of SMI selection are always affected by the complexity of the overall process and will depend drastically on the materials and devices that are or will be needed, this roadmap will assist in choosing the potential effective SMIs based on quite an exhaustive set of "SMI families" in connection with general types of target surfaces.
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Affiliation(s)
- Alfredo Mameli
- TNO-Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands
| | - Andrew V Teplyakov
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
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Bonvalot M, Vallée C, Mannequin C, Jaffal M, Gassilloud R, Possémé N, Chevolleau T. Area selective deposition using alternate deposition and etch super-cycle strategies. Dalton Trans 2021; 51:442-450. [PMID: 34878446 DOI: 10.1039/d1dt03456a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Area selective deposition (ASD) is a bottom-up process leading to a uniform deposition in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever the strategy used to develop selective deposition by atomic layer deposition, there always comes a time when selectivity becomes defective and growth in undesired substrate areas must be corrected. This leads to the design of ASD by super-cycle alternating deposition and etch. Recent examples from the literature show a great diversity in the design of the etching step and indicate that the optimization of selective deposition by super-cycles is only possible through a careful optimization of the etching step parameters (chemistry, frequency, duration, etc.). In this paper, we discuss how to optimize this step and we show that different approaches can be developed to optimize the overall ASD process throughput, while simultaneously limiting process drift and contamination. We also show that complementary selective properties can prove a valuable leverage enabling ASD processes based on super-cycles, such as structure selective deposition, whereby a difference in thin film morphology in growth and non-growth areas can be smartly taken advantage of during the etching step.
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Affiliation(s)
- Marceline Bonvalot
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France. .,Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Christophe Vallée
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France. .,SUNY POLY, CNSE, Albany, New York 12203, USA.
| | - Cédric Mannequin
- Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Moustapha Jaffal
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France.
| | | | | | - Thierry Chevolleau
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France.
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