Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications

Recent Progress of 2D Materials-Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.

Vacancy Engineering in 2D Transition Metal Chalcogenide Photocatalyst: Structure Modulation, Function and Synergy Application

Transition metal chalcogenides (TMCs) are widely used in photocatalytic fields such as hydrogen evolution, nitrogen fixation, and pollutant degradation due to their suitable bandgaps, tunable electronic and optical properties, and strong reducing ability. The unique 2D malleability structure provides a pre-designed platform for customizable structures. The introduction of vacancy engineering makes up for the shortcomings of photocorrosion and limited light response and provides the greatest support for TMCs in terms of kinetics and thermodynamics in photocatalysis. This work reviews the effect of vacancy engineering on photocatalytic performance based on 2D semiconductor TMCs. The characteristics of vacancy introduction strategies are summarized, and the development of photocatalysis of vacancy engineering TMCs materials in energy conversion, degradation, and biological applications is reviewed. The contribution of vacancies in the optical range and charge transfer kinetics is also discussed from the perspective of structure manipulation. Vacancy engineering not only controls and optimizes the structure of the TMCs, but also improves the optical properties, charge transfer, and surface properties. The synergies between TMCs vacancy engineering and atomic doping, other vacancies, and heterojunction composite techniques are discussed in detail, followed by a summary of current trends and potential for expansion.

Mo4+-Doped CuS Nanosheet-Assembled Hollow Spheres for CO2 Electroreduction to Ethanol in a Flow Cell

Electrocatalytic CO2 reduction reaction (CO2RR) to ethanol has been widely researched for potential commercial application. However, it still faces limited selectivity at a large current density. Herein, Mo4+-doped CuS nanosheet-assembled hollow spheres are constructed to address this issue. Mo4+ ion doping modifies the local electronic environments and diversifies the binding sites of CuS, which increases the coverage of linear *COL and produces bridge *COB for subsequent *COL-*COH coupling toward ethanol production. The optimal Mo9.0%-CuS can electrocatalyze CO2 to ethanol with a faradaic efficiency of 67.5% and a partial current density of 186.5 mA cm-2 at -0.6 V in a flow cell. This work clarifies that doping high valence transition metal ions into Cu-based sulfides can regulate the coverage and configuration of related intermediates for ethanol production during the CO2RR in a flow cell.

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Fast near-infrared photodetectors from p-type SnSe nanoribbons

Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light-matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performance photodetectors so far. In this work, we successfully synthesized high-quality p-type SnSe NRs by chemical vapor deposition and then fabricated near-infrared photodetectors. The SnSe NR photodetectors show a high responsivity of 376.71 A W^-1, external quantum efficiency of 5.65 × 10⁴%, and detectivity of 8.66 × 10¹¹Jones. In addition, the devices show a fast response time with rise and fall time of up to 43μs and 57μs, respectively. Furthermore, the spatially resolved scanning photocurrent mapping shows very strong photocurrent at the metal-semiconductor contact regions, as well as fast generation-recombination photocurrent signals. This work demonstrated that p-type SnSe NRs are promising material candidates for broad-spectrum and fast-response optoelectronic devices.

Direct Z-Scheme SnSe2/SnSe Heterostructure Passivated by Al2O3 for Highly Stable and Sensitive Photoelectrochemical Photodetectors

To mimic the natural photosynthesis system, a Z-scheme heterostructure is proposed as a viable and effective strategy for efficient solar energy utilization such as photocatalysis and photoelectrochemical (PEC) water splitting due to the high carrier separation efficiency, fast charge transport, strong redox, and wide light absorption. However, it remains a huge challenge to form a direct Z-scheme heterostructure due to the internal electric-field restriction and vital band-alignment at the interface. Herein, the van der Waals heterostructure based on the allotrope SnSe₂ and SnSe is designed and synthesized by a two-step vapor phase deposition method to overcome the limitation in the formation of the Z-scheme heterostructure for the first time. The Z-scheme heterostructure of SnSe₂/SnSe is confirmed by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, PEC measurement, density functional theory calculations, and water splitting. Strikingly, the PEC photodetectors based on the Z-scheme heterostructure show a synergistic effect of superior stability from SnSe and fast photoresponse from SnSe₂. As such, the SnSe₂/SnSe Z-scheme heterostructure shows a good photodetection performance in the ultraviolet to visible wavelength range. Furthermore, the photodetector shows a faster response/recovery time of 13/14 ms, a higher photosensitivity of 529.13 μA/W, and a higher detectivity of 4.94 × 10⁹ Jones at 475 nm compared with those of single components. Furthermore, the photodetection stability of the SnSe₂/SnSe is also greatly improved by a-thin-Al₂O₃-layer passivation. The results imply the promising rational design of a direct Z-scheme heterostructure with efficient charge transfer for high performance of optoelectronic devices.

Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W^-1 at -0.1 V and 3.5 mAW^-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 10⁹ Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm^-2  h^-1 and ≈14.320 µmol cm^-2  h^-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.

Size-tunable bismuth quantum dots for self-powered photodetectors under ambient conditions

Although black phosphorus analogue, bismuthene, has been extensively investigated in recent years, yet the investigation into the photoelectronic devices is still in its infancy. In this contribution, uniform zero-dimensional (0D) bismuth (Bi) quantum dots (QDs) with different sizes were successfully synthesized by a simple solvothermal method. The as-synthesized 0D Bi QDs serve as working electrode materials by a direct deposition for photoelectrochemical (PEC)-type photodetection. The PEC results demonstrate that the as-fabricated 0D Bi QD-based electrode not only possess suitable self-powered broadband photoresponse, but also displays excellent photodetection performance. Under simulated light, the photocurrent density and photoresponsivity of the as-fabricated 0D Bi QD-based electrode can reach 2690 nA cm^-2, and 22.0μA W^-1, respectively. In addition, the as-prepared Bi QDs with the average diameter of 17 nm exhibit the best PEC photoresponse behavior in the studied size range of Bi QDs, mainly ascribed to the synergistic effect of suitable band gap and accessible active sites. It is anticipated that the uniform Bi QDs can be served as building blocks for a variety of photoelectronic devices, further expanding the application prospects of bismuthene, and can provide in-depth acknowledge on the performance optimization of monoelement Bi-based optical devices.

Tin Oxide (SnO2) Nanoparticles: Facile Fabrication, Characterization, and Application in UV Photodetectors

Tin oxide (SnO2) nanomaterials are of great interest in many fields such as catalytic, electrochemical, and biomedical applications, due to their low cost, suitable stability characteristics, high photosensitivity, etc. In this contribution, SnO2 NPs were facilely fabricated by calcination of tin (II) oxalate in air, followed by a liquid-phase exfoliation (LPE) method. Size-selected SnO2 NPs were easily obtained using a liquid cascade centrifugation (LCC) technique. The as-obtained SnO2 NPs displayed strong absorption in the UV region (~300 nm) and exhibited narrower absorption characteristics with a decrease in NP size. The as-fabricated SnO2 NPs were, for the first time, directly deposited onto a poly(ethylene terephthalate) (PET) film with a regular Ag lattice to fabricate a flexible working electrode for a photoelectrochemical (PEC)-type photodetector. The results demonstrated that the SnO2-NP-based electrode showed the strongest photoresponse signal in an alkaline electrolyte compared with those in neutral and acidic electrolytes. The maximum photocurrent density reached 14.0 μA cm−2, significantly outperforming black phosphorus nanosheets and black phosphorus analogue nanomaterials such as tin (II) sulfide nanosheets and tellurene. The as-fabricated SnO2 NPs with relatively larger size had better self-powered photoresponse performance. In addition, the as-fabricated SnO2-NP-based PEC photodetector exhibited strong cycling stability for on/off switching behavior under ambient conditions. It is anticipated that SnO2 nanostructures, as building blocks, can offer diverse availabilities for high-performance self-powered optoelectronic devices to realize a carbon-neutral or carbon-free environment.

Self-driven SnS1-xSex alloy/GaAs heterostructure based unique polarization sensitive photodetectors

With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS_1-xSe_x (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS_0.5Se_0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS_1-xSe_x is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W^-1, high detectivity of 4.8 × 10¹² Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of ∼1.25 at 405 nm and ∼1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS_0.5Se_0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS_0.5Se_0.5/GaAs heterostructure for high-performance photodetection devices.

Anisotropic to Isotropic Transition in Monolayer Group-IV Tellurides

Monolayer group-IV tellurides with phosphorene-derived structures are attracting increasing research interest because of their unique properties. Here, we systematically studied the quasiparticle electronic and optical properties of two-dimensional group-IV tellurides (SiTe, GeTe, SnTe, PbTe) using the GW and Bethe-Salpeter equation method. The calculations revealed that all group-IV tellurides are indirect bandgap semiconductors except for monolayer PbTe with a direct gap of 1.742 eV, while all of them are predicted to have prominent carrier transport ability. We further found that the excitonic effect has a significant impact on the optical properties for monolayer group-IV tellurides, and the predicted exciton binding energy is up to 0.598 eV for SiTe. Interestingly, the physical properties of monolayer group-IV tellurides were subject to an increasingly isotropic trend: from SiTe to PbTe, the differences of the calculated quasiparticle band gap, optical gap, and further exciton binding energy along different directions tended to decrease. We demonstrated that these anisotropic electronic and optical properties originate from the structural anisotropy, which in turn is the result of Coulomb repulsion between non-bonding electron pairs. Our theoretical results provide a deeper understanding of the anisotropic properties of group-IV telluride monolayers.