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Yang F, Hu P, Yang FF, Chen B, Yin F, Sun R, Hao K, Zhu F, Wang K, Yin Z. Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300952. [PMID: 37178366 PMCID: PMC10375142 DOI: 10.1002/advs.202300952] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 04/18/2023] [Indexed: 05/15/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most transition metal compounds do not possess room-temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high-quality monolayers to multilayers.
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Affiliation(s)
- Fan Yang
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Ping Hu
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Fairy Fan Yang
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Bo Chen
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Fei Yin
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Ruiyan Sun
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Ke Hao
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Fei Zhu
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Kuaishe Wang
- School of Metallurgy Engineering, State Local Joint Engineering Research Center for Functional Materials Processing, Xi'an University of Architecture and Technology, Xi'an, 710055, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, ACT 2601, Australia
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Yu H, Shao Z, Tao Y, Jiang X, Dong Y, Zhang J, Liu Y, Yang X, Chen D. Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons. Phys Chem Chem Phys 2022; 24:3451-3459. [PMID: 35076037 DOI: 10.1039/d1cp04895c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after they were proposed more than forty years ago. Here, an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on B vacancy h-NB nanoribbons has been proposed firstly, and the transport properties have been studied using density functional theory combined with the nonequilibrium Green's function method. Due to its unique structural characteristics, the tunneling magnetoresistance (TMR) ratio can be tuned and the maximum TMR can reach 1.86 × 105. The potential applications of the IDB-MTJ in magnetic random-access memories and logical computation have also been discussed. We find that the IDB-MTJs have great potential in magnetic random-access memories and logical computation applications.
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Affiliation(s)
- Hailin Yu
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China. .,The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
| | - Zhenguang Shao
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Yongmei Tao
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Xuefan Jiang
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Yaojun Dong
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Jie Zhang
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Yushen Liu
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Xifeng Yang
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China.
| | - Dunjun Chen
- The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
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