Unraveling the Atomic Structure of Bulk Binary Ga-Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications

Supercritical Gallium Trichloride in Oxidative Metal Recycling: Ga2Cl6 Dimers vs GaCl3 Monomers and Rheological Behavior

Oxidative recycling of metals is crucial for a circular economy, encompassing the preservation of natural resources, the reduction of energy consumption, and the mitigation of environmental impacts and greenhouse gas emissions associated with traditional mining and processing. Low-melting gallium trichloride appears to be a promising oxidative solvent for rare-earth metals, transuranium elements, platinum, pnictogens, and chalcogens. Typically, oxidative dissolution with GaCl3 occurs at relatively low temperatures over a few days, assuming the presence of tetrahedral Ga-Cl entities. While supercritical gallium trichloride holds the potential for advanced recycling, little is known about its structure and viscosity. Using high-energy X-ray diffraction and multiscale modeling, which includes first-principles simulations, we have revealed a dual molecular nature of supercritical gallium trichloride, consisting of tetrahedral dimers and flat trigonal monomers. The molecular geometry can be precisely tuned by adjusting the temperature and pressure, optimizing the recycling process for specific metals. The derived viscosity, consistent with the reported results in the vicinity of melting, decreases by a factor of 100 above the critical temperature, enabling fast molecular diffusion, and efficient recycling kinetics.

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Neuromorphic computing, reconfigurable optical metamaterials that are operational over a wide spectral range, holographic and nonvolatile displays of extremely high resolution, integrated smart photonics, and many other applications need next-generation phase-change materials (PCMs) with better energy efficiency and wider temperature and spectral ranges to increase reliability compared to current flagship PCMs, such as Ge₂Sb₂Te₅ or doped Sb₂Te. Gallium tellurides are favorable compounds to achieve the necessary requirements because of their higher melting and crystallization temperatures, combined with low switching power and fast switching rate. Ga₂Te₃ and non-stoichiometric alloys appear to be atypical PCMs; they are characterized by regular tetrahedral structures and the absence of metavalent bonding. The sp³ gallium hybridization in cubic and amorphous Ga₂Te₃ is also different from conventional p-bonding in flagship PCMs, raising questions about its phase-change mechanism. Furthermore, gallium tellurides exhibit a number of unexpected and highly unusual phenomena, such as nanotectonic compression and viscosity anomalies just above their melting points. Using high-energy X-ray diffraction, supported by first-principles simulations, we will elucidate the atomic structure of amorphous Ga₂Te₅ PLD films, compare it with the crystal structure of tetragonal gallium pentatelluride, and investigate the electrical, optical, and thermal properties of these two materials to assess their potential for memory applications, among others.

GeTe2 Phase Change Material for Terahertz Devices with Reconfigurable Functionalities Using Optical Activation

The phenomenon of phase change transition has been a fascinating research subject over decades due to a possibility of dynamically controlled materials properties, allowing the creation of optical devices with unique features. The present paper unravels the optical characteristics and terahertz (THz) dielectric permittivity of a novel phase change material (PCM), GeTe2, prepared by pulsed laser deposition (PLD) and their remarkable contrast in crystalline and amorphous states, in particular, a difference of 7 orders of magnitude in conductivity. The THz spectra were analyzed using the harmonic oscillator and Drude term. Using GeTe2 PLD films, we designed and prepared a THz metasurface in the form of periodic structure and revealed a possibility of tuning the THz resonance either by a thermal control or light-induced crystallization response, thus achieving the dynamic and tunable functionality of the metastructure. We propose controlling the state of metasurface by observing the intensity characteristics of the Raman peak of 155 cm-1. Density functional theory (DFT) modeling demonstrates that in the process of crystallization the mode intensity of 155 cm-1 assigned to Te-Te stretching in amorphous chain fragments decreases and disappears at full crystallization.

Transient Mesoscopic Immiscibility, Viscosity Anomaly, and High Internal Pressure at the Semiconductor-Metal Transition in Liquid Ga2Te3

Gallium tellurides appear to be promising phase-change materials (PCMs) of the next generation for brain-inspired computing and reconfigurable optical metasurfaces. They are different from the benchmark PCMs because of sp³ gallium hybridization in both cubic Ga₂Te₃ and amorphous pulsed laser deposition (PLD) films. Liquid Ga₂Te₃ also shows a viscosity η(T) anomaly just above melting when η(T) first increases and only then starts decreasing. We used high-energy X-ray diffraction to observe a transient mesoscopic immiscibility that suggested dense metallic liquid droplets in a semiconducting melt. The η(T) shape was consistent with this finding. A vanishing first sharp diffraction peak that also shifts to a higher Q indicates a high internal pressure in the metallic melt, which produces a remarkable asymmetry of the Ga-Te nearest neighbor distances and is reminiscent of high-pressure rhombohedral Ga₂Te₃. The observed phenomena provide a realistic scenario for a fast, multilevel SET-RESET response, which also unravels similar trends in the purported density-driven liquid polyamorphism of water, phosphorus, sulfur, and other materials.

Deciphering Fast Ion Transport in Glasses: A Case Study of Sodium and Silver Vitreous Sulfides

High-capacity solid-state batteries are promising future products for large-scale energy storage and conversion. Sodium fast ion conductors including glasses and glass ceramics are unparalleled materials for these applications. Rational design and tuning of advanced sodium sulfide electrolytes need a deep insight into the atomic structure and dynamics in relation with ion-transport properties. Using pulsed neutron diffraction and Raman spectroscopy supported by first-principles simulations, we show that preferential diffusion pathways in vitreous sodium and silver sulfides are related to isolated sulfur S_iso, that is, the sulfur species surrounded exclusively by mobile cations with a typical stoichiometry of M/S_iso ≈ 2. The S_iso/S_tot fraction appears to be a reliable descriptor of fast ion transport in glassy sulfide systems over a wide range of ionic conductivities and cation diffusivities. The S_iso fraction increases with mobile cation content x, tetrahedral coordination of the network former and, in case of thiogermanate systems, with germanium disulfide metastability and partial disproportionation, GeS₂ → GeS + S, leading to the formation of additional sulfur, transforming into S_iso. A research strategy enabling to achieve extended and interconnected pathways based on isolated sulfur would lead to glassy electrolytes with superior ionic diffusion.

Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors

As with all stylish 2D functional materials, tellurene and tellurides possessing excellent physical and chemical properties such as high environmental stability, tunable narrow bandgap, and lower thermal conductivity, have aroused the great interest of the researchers. These properties of such materials also form the basis for relatively newfangled scholarly fields involving advanced topics, especially for broadband photodetectors. Integrating the excellent properties of many 2D materials, tellurene/telluride-based photodetectors show great flexibility, higher frequency response or faster time response, high signal-to-noise ratio, and so on, which make them leading the frontier of photodetector research. To fully understand the excellent properties of tellurene/tellurides and their optoelectronic applications, the recent advances in tellurene/telluride-based photodetectors are maximally summarized. Benefiting from the solid research in this field, the challenges and opportunities of tellurene/tellurides for future optoelectronic applications are also discussed in this review, which might provide possibilities for the realization of state-of-the-art high-performance tellurene/telluride-based devices.