Effects of Oxygen Vacancies and Cation Valence States on the Triboelectric Property of Substoichiometric Oxide Films

Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.

Human Machine Interface with Wearable Electronics Using Biodegradable Triboelectric Films for Calligraphy Practice and Correction

Letter handwriting, especially stroke correction, is of great importance for recording languages and expressing and exchanging ideas for individual behavior and the public. In this study, a biodegradable and conductive carboxymethyl chitosan-silk fibroin (CSF) film is prepared to design wearable triboelectric nanogenerator (denoted as CSF-TENG), which outputs of V_oc ≈ 165 V, I_sc ≈ 1.4 μA, and Q_sc ≈ 72 mW cm^-2. Further, in vitro biodegradation of CSF film is performed through trypsin and lysozyme. The results show that trypsin and lysozyme have stable and favorable biodegradation properties, removing 63.1% of CSF film after degrading for 11 days. Further, the CSF-TENG-based human-machine interface (HMI) is designed to promptly track writing steps and access the accuracy of letters, resulting in a straightforward communication media of human and machine. The CSF-TENG-based HMI can automatically recognize and correct three representative letters (F, H, and K), which is benefited by HMI system for data processing and analysis. The CSF-TENG-based HMI can make decisions for the next stroke, highlighting the stroke in advance by replacing it with red, which can be a candidate for calligraphy practice and correction. Finally, various demonstrations are done in real-time to achieve virtual and real-world controls including writing, vehicle movements, and healthcare.