Low-Temperature Co-hydroxylated Cu/SiO2 Hybrid Bonding Strategy for a Memory-Centric Chip Architecture

Ultrastable 3D Heterogeneous Integration via N-Heterocyclic Carbene Self-Assembled Nanolayers

The commercialization of 3D heterogeneous integration through hybrid bonding has accelerated, and accordingly, Cu-polymer bonding has gained significant attention as a means of overcoming the limitations of conventional Cu-SiO2 hybrid bonding, offering high compatibility with other fabrication processes. Polymers offer robust bonding strength and a low dielectric constant, enabling high-speed signal transmission with high reliability, but suffer from low thermomechanical stability. Thermomechanical stability of polymers was not achieved previously because of thermal degradation and unstable anchoring. To overcome these limitations, wafer-scale Cu-polymer bonding via N-heterocyclic carbene (NHC) nanolayers was presented for 3D heterogeneous integration, affording ultrastable packing density, crystallinity, and thermal properties. NHC nanolayers were deposited on copper electrodes via electrochemical deposition, and wafer-scale 3D heterogeneous integration was achieved by adhesive bonding at 170 °C for 1 min. Ultrastable conductivity and thermomechanical properties were observed by the spatial mapping of conductivity, work function, and force-distance curves. With regard to the characterization of NHC nanolayers, low-temperature bonding, robust corrosion inhibition, enhanced electrical conductivity, back-end-of-line process compatibility, and fabrication process reduction, NHC Cu/polymer bonding provides versatile advances in 3D heterogeneous integration, indicating that NHC Cu/polymer bonding can be utilized as a platform for future 3D vertical chip architectures.

Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers

Cu/SiO2 hybrid bonding presents a promising avenue for achieving high-density interconnects by obviating the need for microbumps and underfills. Traditional copper bonding methods often demand temperatures exceeding 400 °C, prompting recent endeavors to mitigate bonding temperatures through investigations into metal passivation bonding. In this study, we scrutinized the diffusion behavior associated with various metal passivation layers (Platinum, Titanium, Tantalum, and Chromium) in the context of low-temperature direct copper bonding and delved into the essential bonding mechanisms. We observed a deviation from conventional metal-metal bonding factors, such as surface roughness and grain size, in the diffusion behavior. Remarkably, our analysis revealed a pronounced correlation between the crystallinity of the metal passivation layers and diffusion behavior, surpassing the influence of other experimental factors. Subsequent post-bonding examinations corroborated consistent diffusion behavior in Pt and Cr passivation samples with disparate crystallinities, reinforcing the significance of crystallinity in the bonding process. Our findings underscore crystallinity as a pivotal factor governing diffusion behavior, even under varied bonding conditions. These insights are instrumental in achieving exceptional bonding characteristics at lower temperatures in Cu/SiO2 hybrid bonding. Implications of this study extend to the prospect of advancing highly integrated systems through die-to-wafer bonding, marking a substantial stride toward future applications.

Improvement of Solder Joint Shear Strength under Formic Acid Atmosphere at A Low Temperature

With the continuous reduction of chip size, fluxless soldering has brought attention to high-density, three-dimensional packaging. Although fluxless soldering technology with formic acid (FA) atmosphere has been presented, few studies have examined the effect of the Pt catalytic, preheating time, and soldering pad on FA soldering for the Sn-58Bi solder. The results have shown that the Pt catalytic can promote oxidation-reduction and the formation of a large pore in the Sn-58Bi/Cu solder joint, which causes a decrease in shear strength. ENIG (electroless nickel immersion gold) improves soldering strength. The shear strength of Sn-58Bi/ENIG increases under the Pt catalytic FA atmosphere process due to the isolation of the Au layer on ENIG. The Au layer protects metal from corrosion and provides a good contact surface for the Sn-58Bi solder. The shear strength of the Sn-58Bi/ENIG joints under a Pt catalytic atmosphere improved by 44.7% compared to using a Cu pad. These findings reveal the improvement of the shear strength of solder joints bonded at low temperatures under the FA atmosphere.

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.

Low-Temperature Transient Liquid Phase Bonding Technology via Cu Porous-Sn58Bi Solid-Liquid System under Formic Acid Atmosphere

This study proposes a low-temperature transient liquid phase bonding (TLPB) method using Sn58Bi/porous Cu/Sn58Bi to enable efficient power-device packaging at high temperatures. The bonding mechanism is attributed to the rapid reaction between porous Cu and Sn58Bi solder, leading to the formation of intermetallic compounds with high melting point at low temperatures. The present paper investigates the effects of bonding atmosphere, bonding time, and external pressure on the shear strength of metal joints. Under formic acid (FA) atmosphere, Cu₆Sn₅ forms at the porous Cu foil/Sn58Bi interface, and some of it transforms into Cu₃Sn. External pressure significantly reduces the micropores and thickness of the joint interconnection layer, resulting in a ductile fracture failure mode. The metal joint obtained under a pressure of 10 MPa at 250 °C for 5 min exhibits outstanding bonding mechanical performance with a shear strength of 62.2 MPa.

Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management

Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems.