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Wen D, Yuan R, Cao K, Yang F, Chen R. Advancements in atomic-scale interface engineering for flexible electronics: enhancing flexibility and durability. NANOTECHNOLOGY 2024; 35:412501. [PMID: 39025081 DOI: 10.1088/1361-6528/ad64db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Accepted: 07/18/2024] [Indexed: 07/20/2024]
Abstract
Flexible electronics, such as wearable displays, implantable electronics, soft robots, and smart skin, have garnered increasing attention. Despite notable advancements in research, a bottleneck remains at the product level due to the prevalent use of polymer-based materials, requiring encapsulation films for lifespan extension and reliable performance. Multilayer composites, incorporating thin inorganic layers to maintain low permeability towards moisture, oxygen, ions, etc, exhibit potential in achieving highly flexible barriers but encounter challenges stemming from interface instability between layers. This perspective offers a succinct review of strategies and provides atomic-scale interface modulation strategy utilizing atomic layer integration technology focused on enhancing the flexibility of high-barrier films. It delves into bendable multilayers with atomic-scale interface modulation strategies, encompassing internal stress and applied stress modulation, as well as stretchable composite structural designs such as gradient/hybrid, wavy, and island. These strategies showcase significant improvements in flexibility from bendable to stretchable while maintaining high barrier properties. Besides, optimized manufacturing methods, materials, and complex structure design based on atomic-scale interface engineering are provided, better aligning with the future development of flexible electronics. By laying the groundwork for these atomic-scale strategies, this perspective contributes to the evolution of flexible electronics, enhancing their flexibility, durability, and functionality.
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Affiliation(s)
- Di Wen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Ruige Yuan
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Kun Cao
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Fan Yang
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Rong Chen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
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Luo P, Imran T, Ren DL, Zhao J, Wu KW, Zeng YJ, Su ZH, Fan P, Zhang XH, Liang GX, Chen S. Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd-Free Sb 2 Se 3 Thin-Film Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306516. [PMID: 37715101 DOI: 10.1002/smll.202306516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 08/28/2023] [Indexed: 09/17/2023]
Abstract
Antimony selenide (Sb2 Se3 ) is a highly promising photovoltaic material thanks to its outstanding optoelectronic properties, as well as its cost-effective and eco-friendly merits. However, toxic CdS is widely used as an electron transport layer (ETL) in efficient Sb2 Se3 solar cells, which largely limit their development toward market commercialization. Herein, an effective green Cd-free ETL of SnOx is introduced and deposited by atomic layer deposition method. Additionally, an important post-annealing treatment is designed to further optimize the functional layers and the heterojunction interface properties. Such engineering strategy can optimize SnOx ETL with higher nano-crystallinity, higher carrier density, and less defect groups, modify Sb2 Se3 /SnOx heterojunction with better interface performance and much desirable "spike-like" band alignment, and also improve the Sb2 Se3 light absorber layer quality with passivated bulk defects and prolonged carrier lifetime, and therefore to enhance carrier separation and transport while suppressing non-radiative recombination. Finally, the as-fabricated Cd-free Mo/Sb2 Se3 /SnOx /ITO/Ag thin-film solar cell exhibits a stimulating efficiency of 7.39%, contributing a record value for Cd-free substrate structured Sb2 Se3 solar cells reported to date. This work provides a viable strategy for developing and broadening practical applications of environmental-friendly Sb2 Se3 photovoltaic devices.
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Affiliation(s)
- Ping Luo
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Tahir Imran
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Dong-Lou Ren
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, Guangxi, 530004, China
| | - Jun Zhao
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Ke-Wen Wu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Yu-Jia Zeng
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Zheng-Hua Su
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Xiang-Hua Zhang
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes), UMR 6226, Université de Rennes, Rennes, F-35000, France
| | - Guang-Xing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
| | - Shuo Chen
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China
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Li Z, Wang Z, Chen Z, Feng J, Wang J, Fan S, Sun H, Duan Y. Complete stress release in monolayer ALD-Al 2O 3 films based on mechanical equilibrium homeostasis to realize a bending radius of 1 mm. SOFT MATTER 2022; 18:4756-4766. [PMID: 35703537 DOI: 10.1039/d2sm00486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Low-temperature-deposited, transparent, high-barrier-performance atomic layer deposition (ALD) Al2O3 films are widely utilized to protect organic optoelectronic devices. However, because the internal compression residual stresses result in poor mechanical properties, these films are unable to realize independent encapsulation. In this work, we propose a pre-bending and substrate thermal expansion process to fabricate low-residual-stress ALD-Al2O3 films by multistep adjustment of mechanical equilibrium homeostasis, compare and analyze the key properties of the films to determine the optimal processing conditions, and adjust the surface area differences between the film and the substrate to acquire a flat-bottom encapsulation substrate. Therefore, fewer cracks form in ALD-Al2O3 deposited at 40 °C, and no significant increase in the water-vapor-transmission rate (WVTR) occurred after multiple bending processes at a 3 mm radius. Furthermore, both the bending radius for the first crack generation and crack saturation density were optimal, resulting in excellent mechanical stability, and a bending radius of 1 mm was achieved. Finally, we confirm the feasibility of the monolayer ALD-Al2O3 prepared by our process for applications in OLEDs. The encapsulated OLED maintained 94% of its initial efficiency after 10 days of bending in a harsh environment at 30 °C and 90% relative humidity.
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Affiliation(s)
- Ze Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Zhenyu Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Ziqiang Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Jing Feng
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Jintao Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Siyu Fan
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
| | - Hongbo Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing 100084, China
| | - Yu Duan
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
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