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Wu FC, Chen CY, Wang YW, You CB, Wang LY, Ruan J, Chou WY, Lai WC, Cheng HL. Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:41211-41222. [PMID: 39054697 PMCID: PMC11310909 DOI: 10.1021/acsami.4c05966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 06/03/2024] [Accepted: 07/17/2024] [Indexed: 07/27/2024]
Abstract
Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.
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Affiliation(s)
- Fu-Chiao Wu
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Chun-Yu Chen
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Wu Wang
- Institute
of Photonics, National Changhua University
of Education, Changhua 500, Taiwan
| | - Chun-Bin You
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Li-Yun Wang
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Jrjeng Ruan
- Department
of Materials Science and Engineering, National
Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Yang Chou
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Wei-Chih Lai
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Horng-Long Cheng
- Department
of Photonics, Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan
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Pandey U, Pal N, Ghosh A, Suman S, Biring S, Pal BN. Blue sensitive sub-band gap negative photoconductance in SnO 2/TiO 2 NP bilayer oxide transistor. NANOSCALE 2024; 16:8504-8513. [PMID: 38591642 DOI: 10.1039/d4nr00406j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Large negative photoconductance (NPC) of SnO2/TiO2 nanoparticles (NPs) heterostructure has been observed with thin film transistor (TFT) geometry and has been investigated using sub-bandgap light (blue) illumination. This negative photoconduction has been detected both in accumulation and depletion mode operation, which effectively reduces the carrier mobility (μ) of the TFT. Moreover, the threshold voltage (Vth) widely shifted in the positive direction under illumination. The combined effects of the reduction of mobility and Vth shifting led to a faster reduction of On (or Off) state current under illumination. The negative photosensitivity of this system is as high as 3.2 A W-1, which has been rarely reported in the earlier literature. Moreover, the variation of On (or Off) current, μ and Vth shift is linear with low-intensity blue light. This SnO2/TiO2 NP bilayer channel has been deposited on top of an ionic dielectric (Li-Al2O3) that reduces its operating voltage of this TFT within 2 V. Furthermore, the device has achieved a saturation mobility of 0.4 cm2 V-1 s-1 with an on/off ratio of 7.4 × 103 in the dark. An energy band diagram model has been proposed based on the type-II heterostructure formation between SnO2/TiO2 semiconductors to explain this NPC mechanism. According to the energy band diagram model, adsorbed H2O molecules of TiO2 NPs created a depleted layer in the heterostructure that accelerated the recombination process of photo-generated carriers rather than its transport.
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Affiliation(s)
- Utkarsh Pandey
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
| | - Nila Pal
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
| | - Arpan Ghosh
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
| | - Swati Suman
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
- Electronic Materials and Thin Films Lab, Department of Metallurgical and Materials Engineering, Indian Institute of Technology (IIT) Madras, Chennai, India
| | - Sajal Biring
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City, 243, Taiwan.
| | - Bhola N Pal
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi-221005, India.
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Sun C, Liu X, Yao Q, Jiang Q, Xia X, Shen Y, Ye X, Tan H, Gao R, Zhu X, Li RW. A Discolorable Flexible Synaptic Transistor for Wearable Health Monitoring. ACS NANO 2024; 18:515-525. [PMID: 38126328 DOI: 10.1021/acsnano.3c08357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Multifunctional intelligent wearable electronics, providing integrated physiological signal analysis, storage, and display for real-time and on-site health status diagnosis, have great potential to revolutionize health monitoring technologies. Advanced wearable systems combine isolated digital processor, memory, and display modules for function integration; however, they suffer from compatibility and reliability issues. Here, we introduce a flexible multifunctional electrolyte-gated transistor (EGT) that integrates synaptic learning, memory, and autonomous discoloration functionalities for intelligent wearable application. This device exhibits synergistic light absorption coefficient changes during voltage-gated ion doping that modulate the electrical conductance changes for synaptic function implementation. By adaptively changing color, the EGT can differentiate voltage pulse inputs with different frequency, amplitude, and duration parameters, exhibiting excellent reversibility and reliability. We developed a smart wearable monitoring system that incorporates EGT devices and sensors for respiratory and electrocardiogram signal analysis, providing health warnings through real-time and on-site discoloration. This study represents a significant step toward smart wearable technologies for health management, offering health evaluation through intelligent displays.
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Affiliation(s)
- Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Quanxing Yao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Qian Jiang
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiangling Xia
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Youfeng Shen
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- College of Materials Sciences and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto FI-00076, Finland
| | - Runsheng Gao
- National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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