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Bai S, Yang L, Haase K, Wolansky J, Zhang Z, Tseng H, Talnack F, Kress J, Andrade JP, Benduhn J, Ma J, Feng X, Hambsch M, Mannsfeld SCB. Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300057. [PMID: 36995051 DOI: 10.1002/advs.202300057] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 02/22/2023] [Indexed: 05/27/2023]
Abstract
Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆Vth ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆Vth responses is reported. Exposure to low intensity light (25.7 µW cm-2 ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 105 ) and memory properties including long retention time (>1.5 × 105 s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.
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Affiliation(s)
- Shaoling Bai
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Lin Yang
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Katherina Haase
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Jakob Wolansky
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Zongbao Zhang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Hsin Tseng
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Felix Talnack
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Joshua Kress
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Jonathan Perez Andrade
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, 01069, Dresden, Germany
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Ji Ma
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
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Wang L, Zhang T, Shen J, Huang J, Li W, Shi W, Huang W, Yi M. Flexibly Photo-Regulated Brain-Inspired Functions in Flexible Neuromorphic Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:13380-13392. [PMID: 36853974 DOI: 10.1021/acsami.2c22754] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
As an attractive prototype for neuromorphic computing, the difficultly attained three-terminal platforms have specific advantages in implementing the brain-inspired functions. Also, in these devices, the most utilized mechanisms are confined to the electrical gate-controlled ionic migrations, which are sensitive to the device defects and stoichiometric ratio. The resultant memristive responses have fluctuant characteristics, which have adverse influences on the neural emulations. Herein, we designed a specific transistor platform with light-regulated ambipolar memory characteristics. Also, based on its gentle processes of charge trapping, we obtain the impressive memristive performances featured by smooth responses and long-term endurable characteristics. The optoelectronic samples were also fabricated on flexible substrates successfully. Interestingly, based on the optoelectronic signals of the flexible devices, we endow the desirable optical processes with the brain-inspired emulations. We can flexibly emulate the light-inspired learning-memory functions in a synapse and further devise the advanced synapse array. More importantly, through this versatile platform, we investigate the mutual regulation of excitation and inhibition and implement their sensitive-mode transformations and the homeostasis property, which is conducive to ensuring the stability of overall neural activity. Furthermore, our flexible optoelectronic platform achieves high classification accuracy when implemented in artificial neural network simulations. This work demonstrates the advantages of the optoelectronic platform in implementing the significant brain-inspired functions and provides an insight into the future integration of visible sensing in flexible optoelectronic transistor platforms.
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Affiliation(s)
- Laiyuan Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Tao Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Junhao Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Jin Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Wei Shi
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
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