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Inaba S, Lu W, Shima A, Ii S, Takahashi M, Yamanaka Y, Hattori Y, Kubota K, Huang K, Iwaya M, Takeuchi T, Kamiyama S. Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs. NANOSCALE ADVANCES 2024; 6:2306-2318. [PMID: 38694475 PMCID: PMC11059487 DOI: 10.1039/d3na01101a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2023] [Accepted: 02/10/2024] [Indexed: 05/04/2024]
Abstract
Significant attention has been directed toward core-shell GaInN/GaN multiple-quantum shell (MQS) nanowires (NWs) in the context of high-efficiency micro light-emitting diodes (micro-LEDs). These independent three-dimensional NWs offer the advantage of reducing the impact of sidewall etching regions. Furthermore, the emitting plane on the sidewalls demonstrates either nonpolar or semipolar orientation, while the dislocation density is exceptionally low. In this study, we assessed how changes in the NW morphology are affected by GaInN/GaN superlattice (SL) structures grown at varying growth temperatures, as well as control of the emission plane via the p-GaN shell and emission sizes. The SL growth rate was enhanced at elevated growth temperatures, accompanied by the shrinkage of the (0001)-plane and expansion of the (11̄01)-plane on the NWs. The samples exhibited a higher light output when the SLs were grown at elevated temperatures compared to those grown with lower temperatures. A similar trend was observed for the samples with a gradual temperature transition during the growth. These findings indicate that the dimensions of the (0001)-plane can be controlled through SL growth, which in turn influences the emission properties of NW-LEDs. In addition, the emission properties of NW-LEDs with different growth time p-GaN shells and different emission sizes were investigated. Based on the NW-LED characteristics, it was revealed that the weak emission of the (0001)-plane was the dominant factor for the limited light output, and the most effective way to realize high efficiency devices is to suppress current injection into the apex or minimize the grown (0001)-plane region. Overall, it is one promising way to control the emission planes of NWs, which holds significant relevance for the potential application of NW-LEDs in the realm of micro-LEDs.
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Affiliation(s)
- Soma Inaba
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Weifang Lu
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University Xiamen 361005 China
- Future Display Institute in Xiamen Xiamen 361005 China
| | - Ayaka Shima
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Shiori Ii
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Mizuki Takahashi
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Yuki Yamanaka
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Yuta Hattori
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Kosei Kubota
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Kai Huang
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University Xiamen 361005 China
- Future Display Institute in Xiamen Xiamen 361005 China
| | - Motoaki Iwaya
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Tetsuya Takeuchi
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Satoshi Kamiyama
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
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Bangolla HK, Siao MD, Huang YH, Chen RS, Žukauskaitė A, Palisaitis J, Persson POÅ, Hultman L, Birch J, Hsiao CL. Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy. NANOSCALE ADVANCES 2022; 4:4886-4894. [PMID: 36381504 PMCID: PMC9642355 DOI: 10.1039/d2na00456a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (In x Al1-x N) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned In x Al1-x N NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.
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Affiliation(s)
- Hemanth Kumar Bangolla
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Ming-Deng Siao
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Yi-Hua Huang
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Ruei-San Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Agnė Žukauskaitė
- Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP Dresden 01277 Germany
| | - Justinas Palisaitis
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Per O Å Persson
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Lars Hultman
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Jens Birch
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Ching-Lien Hsiao
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
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Inaba S, Lu W, Ito K, Katsuro S, Nakayama N, Shima A, Jinno Y, Yamamura S, Sone N, Huang K, Iwaya M, Takeuchi T, Kamiyama S. Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50343-50353. [PMID: 36302205 DOI: 10.1021/acsami.2c13648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Core-shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to the minimized etching region on their sidewall, nonpolar or semipolar emission planes, and ultralow density of dislocations. In this study, we evaluated the changes in NW morphologies and the corresponding device properties induced by GaInN/GaN superlattice (SL) structures. The cathodoluminescence intensities of the samples with 20 and 40 pairs of SLs were about 2.2 and 3.4 times higher, respectively, than that of the sample without SLs. The high-resolution scanning transmission electron microscopy (STEM) inspection confirmed that the high growth temperature of SLs prevented growth in the semipolar plane region close to the n-GaN core. A similar phenomenon was also observed for the GaN quantum barriers of the semipolar MQS region under a high growth temperature of 810 °C. This phenomenon was ascribed to the passivation of the semipolar plane surface by hydrogen atoms and the high probability of decomposition through NH3 or N-H-related bonds. Although no clear SL grew on the semipolar plane near the n-core region, the top area of the nonpolar plane SL was expected to adequately suppress the point defects propagating from the n-GaN core to the semipolar plane MQS. The electroluminescence (EL) spectra and light output curves demonstrated a clear enhancement of more than 3-folds compared to the fabricated micro-LEDs without SL structures, which was associated with the improved crystalline quality of the MQS and enlarged area of the semipolar planes. Moreover, by increasing the growth time of GaN quantum barriers, the EL emission intensity of the micro-LED devices exhibited a 4-fold improvement owing to the reduced carrier overflow in the thickened GaN barriers on the semipolar (11̅01) planes. Thus, the results verified the possibility of realizing highly efficient NW-based micro-LEDs by optimizing the NW morphology using SL structures.
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Affiliation(s)
- Soma Inaba
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Weifang Lu
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Kazuma Ito
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Sae Katsuro
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Nanami Nakayama
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Ayaka Shima
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Yukimi Jinno
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Shiori Yamamura
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Naoki Sone
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Kai Huang
- Future Display Institute in Xiamen, Xiamen 361005, China
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, China
| | - Motoaki Iwaya
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Tetsuya Takeuchi
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
| | - Satoshi Kamiyama
- Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
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Ito K, Lu W, Katsuro S, Okuda R, Nakayama N, Sone N, Mizutani K, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs. NANOSCALE ADVANCES 2021; 4:102-110. [PMID: 36132962 PMCID: PMC9419305 DOI: 10.1039/d1na00299f] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Accepted: 10/13/2021] [Indexed: 05/06/2023]
Abstract
Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for LED processes were selectively grown on patterned commercial GaN/sapphire substrates using metal-organic chemical vapor deposition. Three electroluminescence (EL) emission peaks (440, 540, and 630 nm) were observed, which were primarily attributed to the nonpolar m-planes, semipolar r-planes, and the polar c-plane tips of nanowire arrays. A modified epitaxial growth sequence with improved crystalline quality for MQSs was used to effectively narrow the EL emission peaks. Specifically, nanowire-based LEDs manifested a clear redshift from 430 nm to 520 nm upon insertion of AlGaN spacers after the growth of each GaInN quantum well. This demonstrates the feasibility of lengthening the EL emission wavelength since an AlGaN spacer can suppress In decomposition of the GaInN quantum wells during ramping up the growth temperature for GaN barriers. EL spectra showed stable emission peaks as a function of the injection current, verifying the critical feature of the non-polarization of GaN/GaInN MQSs on nanowires. In addition, by comparing EL and photoluminescence spectra, the yellow-red emission linked to the In-fluctuation and point defects in the c-plane MQS was verified by varying the activation annealing time and lowering the growth temperature of the GaInN quantum wells. Therefore, optimization of MQS nanowire growth with a high quality of c-planes is considered critical for improving the luminous efficiency of nanowire-based micro-LEDs/white LEDs.
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Affiliation(s)
- Kazuma Ito
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Weifang Lu
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Sae Katsuro
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Renji Okuda
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Nanami Nakayama
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Naoki Sone
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
- Koito Manufacturing Co., LTD. Tokyo 108-8711 Japan
| | | | - Motoaki Iwaya
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Tetsuya Takeuchi
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Satoshi Kamiyama
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
| | - Isamu Akasaki
- Department of Materials Science and Engineering, Meijo University 1-501 Shiogamaguchi, Tenpaku-ku Nagoya 468-8502 Japan
- Akasaki Research Center, Nagoya University Furo-cho, Chikusa-ku Nagoya 460-8601 Japan
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