1
|
Mao S, Sun B, Zhou G, Qin J, Yang Y, Rao Z, Liu M, Ke C, Zhao Y. A magnetic field controlled memristor towards the design of an implantable detector. J Colloid Interface Sci 2023; 643:38-46. [PMID: 37044012 DOI: 10.1016/j.jcis.2023.04.027] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/30/2023] [Accepted: 04/05/2023] [Indexed: 04/14/2023]
Abstract
Memristors, which combine the behaviors of memory and resistive switching (RS), have a wide application prospect in information processing and artificial neural networks. The RS memory behaviors of memristors are primarily determined by the functional layer materials, device structure, and working conditions. Herein, a CuMnO2 nanomaterial with the manganese copper ore structure was prepared on a Ti substrate by hydrothermal method, and a memristor with the Ag/CuMnO2/Ti sandwich structure was developed. The RS memory behavior of the as-prepared memristor can be regulated through a low magnetic field (MF), and thus the resistance value of device shows a multi-level resistance states. Compared with other regulation factors, the MF can remotely adjust and control the RS characteristics of memristor, which is a non-invasive and non-destructive regulatory means. The MF regulated memristor can not only be used for multi-level high-density information storage, but also it can protect the health of special populations by identifying the MF intensity of the surrounding environment. When the device is operated in an MF environment, the change of resistance value of the device in both high resistance state (HRS) and low resistance state (LRS) is mainly attributed to the influence of Loren magnetic force on conductive ions.
Collapse
Affiliation(s)
- Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, China
| | - Jiajia Qin
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Yusheng Yang
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Zhaowei Rao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Mingnan Liu
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Chuan Ke
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China; Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education, Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
| |
Collapse
|
2
|
Ma LY, Liu S. Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO_{2}. PHYSICAL REVIEW LETTERS 2023; 130:096801. [PMID: 36930924 DOI: 10.1103/physrevlett.130.096801] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Revised: 08/09/2022] [Accepted: 01/24/2023] [Indexed: 06/18/2023]
Abstract
Defects such as oxygen vacancy are widely considered to be critical for the performance of ferroelectric HfO_{2}-based devices, and yet atomistic mechanisms underlying various exotic effects such as wake-up and fluid imprint remain elusive. Here, guided by a lattice-mode-matching criterion, we systematically study the phase transitions between different polymorphs of hafnia under the influences of neutral and positively charged oxygen vacancies using a first-principles-based variable-cell nudged elastic band technique. We find that the positively charged oxygen vacancy can promote the transition of various nonpolar phases to the polar phase kinetically, enabled by a transient high-energy tetragonal phase and extreme charge-carrier-inert ferroelectricity of the polar Pca2_{1} phase. The intricate coupling between structural polymorphism kinetics and the charge state of the oxygen vacancy has important implications for the origin of ferroelectricity in HfO_{2}-based thin films as well as wake-up, fluid imprint, and inertial switching.
Collapse
Affiliation(s)
- Li-Yang Ma
- Fudan University, Shanghai 200433, China
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| |
Collapse
|