X-Ray-Induced Modification of the Photophysical Properties of MAPbBr3 Single Crystals

The model of sub-bandgap light induced all-optical luminescence switching of lead-halide perovskite microcrystals

The phenomenon of sub-bandgap light induced luminescence switching for lead tribromide perovskite microcrystals with excess lead was recently discovered by Wan et al., Adv. Mater. 35, 2209851 (2023). It was found that the photoluminescence caused by the high energy excitation light is suppressed by the control light, the photon energy of which is less than the bandgap of the crystal, and is restored after switching off the control light. We propose an original model of this phenomenon, taking into account the spatially distributed kinetics of charge carrier recombination and the creation/annihilation of trap states induced by both light sources. The model successfully reproduces the main features of light induced luminescence switching.

Structural Modifications due to Bi-Doping in MAPbBr3 Single Crystals and Their Impact on Electronic Transport and Stability

Doping strategy in lead halide perovskites is essential to enhance its optoelectrical properties and expand the potential applications. In this work, the mechanisms, for how dopants affect the overall structural, optical, electrical, and chemical properties and stability of lead halide perovskite materials, are investigated. This is done by specifically considering various bismuth (Bi) doping concentrations in MAPbBr3 single crystals grown using the inverse temperature crystallization method. The resultant doped single crystals exhibit a saturation point when Bi concentration exceeds 0.063% which is considered an optimum doping point. The highest thermal stability is also achieved at this doping concentration among the doped single crystals. This study clearly identifies how Bi doping affects the properties of MAPbBr3 and extends to consider stability, which has not been fully considered for MA-based perovskites previously. This will provide a clear understanding of evaluating doped perovskite materials for enhanced material properties, device performance, and stability.

Photophysical Properties of Submicrometer Ultrathin Perovskite Single-Crystal Films

Organic-inorganic hybrid perovskite (OIHP) has attracted a great deal of interest with respect to diverse optoelectronic devices. However, the photophysical properties of the OIHP require further understanding because most of the investigations have been conducted with polycrystalline perovskites, which contain high-density structural defects. Here, diverse photophysical properties, including structural characterization, spectroscopic features, and photoexcited products, are studied in submicrometer CH3NH3PbBr3 ultrathin single-crystal (UTSC) films. Unlike polycrystalline films and large single crystals, the UTSC film provides a unique platform for studying spectroscopic characteristics of single-crystal perovskites. Compared with the polycrystalline film, the UTSC film presents an atomically flat morphology and near-perfect lattice with a lower defect density, leading to an isotropic system that can be applied in the construction of high-performance optoelectronic devices. Furthermore, a long lifetime emissive channel assigned to the trion is indicated, which is scarcely found in perovskite polycrystalline films. Our results profoundly improve our understanding of their photophysical properties and expand the horizons for perovskite materials in photonic applications.

Composition dependence of X-ray stability and degradation mechanisms at lead halide perovskite single crystal surfaces

The multiple applications of lead halide perovskite materials and the extensive use of X-ray based techniques to characterize them highlight a need to understand their stability under X-ray irradiation. Here, we present a study where the X-ray stability of five different lead halide perovskite compositions (MAPbI3, MAPbCl3, MAPbBr3, FAPbBr3, CsPbBr3) was investigated using photoelectron spectroscopy. To exclude effects of thin film formation on the observed degradation behaviors, we studied clean surfaces of single crystals. Different X-ray resistance and degradation mechanisms were observed depending on the crystal composition. Overall, perovskites based on the MA+ cation were found to be less stable than those based on FA+ or Cs+. Metallic lead formed most easily in the chloride perovskite, followed by bromide, and only very little metallic lead formation was observed for MAPbI3. MAPbI3 showed one main degradation process, which was the radiolysis of MAI. Multiple simultaneous degradation processes were identified for the bromide compositions. These processes include ion migration towards the perovskite surface and the formation of volatile and solid products in addition to metallic lead. Lastly, CsBr formed as a solid degradation product on the surface of CsPbBr3.

Ionic Field Screening in MAPbBr3 Crystals Revealed from Remnant Sensitivity in X-ray Detection

Research on metal halide perovskites as absorbers for X-ray detection is an attractive subject due to the optimal optoelectronic properties of these materials for high-sensitivity applications. However, the contact degradation and the long-term instability of the current limit the performance of the devices, in close causality with the dual electronic-ionic conductivity of these perovskites. Herein, millimeter-thick methylammonium-lead bromide (MAPbBr₃) single and polycrystalline samples are approached by characterizing their long-term dark current and photocurrent under X-ray incidence. It is shown how both the dark current and the sensitivity of the detectors follow similar trends at short-circuit (V = 0 V) after biasing. By performing drift-diffusion numerical simulations, it is revealed how large ionic-related built-in fields not only produce relaxations to equilibrium lasting up to tens of hours but also continue to affect the charge kinetics under homogeneous low photogeneration rates. Furthermore, a method is suggested for estimating the ionic mobility and concentration by analyzing the initial current at short-circuit and the characteristic diffusion times.

Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon

Perovskite (PVK) films deposited directly on n-type crystalline Si substrates were investigated by two operating modes of the surface photovoltage (SPV) method: (i) the metal-insulator-semiconductor (MIS) mode and (ii) the Kelvin probe force microscopy (KPFM). By scanning from 900 to 600 nm in the MIS mode, we consecutively studied the relatively fast processes of carrier generation, transport, and recombination first in Si, then on both sides of the PVK/Si interface, and finally in the PVK layer and its surface. The PVK optical absorption edge was observed in the range of 1.61-1.65 eV in good agreement with the band gap of 1.63 eV found from photoluminescence spectra. Both SPV methods evidenced an upward energy band bending at the PVK/n-Si interface generating positive SPV. Drift-diffusion modeling allowed us to analyze the shape of the wavelength dependence of the SPV. It was also observed that the intense illumination in the KPFM measurements induces slow SPV transients which were explained by the creation and migration of negative ions and their trapping at the PVK surface. Finally, aging effects were studied by measuring again SPV spectra after one-year storage in air, and an increase in the concentration of shallow defect states at the PVK/n-Si interface was found.

Recent Development of Halide Perovskite Materials and Devices for Ionizing Radiation Detection

Ionizing radiation such as X-rays and γ-rays has been extensively studied and used in various fields such as medical imaging, radiographic nondestructive testing, nuclear defense, homeland security, and scientific research. Therefore, the detection of such high-energy radiation with high-sensitivity and low-cost-based materials and devices is highly important and desirable. Halide perovskites have emerged as promising candidates for radiation detection due to the large light absorption coefficient, large resistivity, low leakage current, high mobility, and simplicity in synthesis and processing as compared with commercial silicon (Si) and amorphous selenium (a-Se). In this review, we provide an extensive overview of current progress in terms of materials development and corresponding device architectures for radiation detection. We discuss the properties of a plethora of reported compounds involving organic-inorganic hybrid, all-inorganic, all-organic perovskite and antiperovskite structures, as well as the continuous breakthroughs in device architectures, performance, and environmental stability. We focus on the critical advancements of the field in the past few years and we provide valuable insight for the development of next-generation materials and devices for radiation detection and imaging applications.