Designing Efficient Si Quantum Dots and LEDs by Quantifying Ligand Effects

Size-Tunable Band Structure and Optical Properties of Colloidal Silicon Nanocrystals Synthesized via Thermal Disproportionation of Hydrogen Silsesquioxane Polymers

Dodecane-capped silicon nanocrystals (NCs) were synthesized by using a low-temperature (800-1100 °C) polymer variant of traditional hydrogen silsesquioxane thermal disproportionation. Highly crystalline Si NCs having tunable diameters (3.0-6.7 nm) and thus photoluminescence (PL) peaks (1.68-1.29 eV) were attained via changes in the maximum annealing temperature. Modifications in the NC band structure with diameter were explored by comparison of emission with absorption spectra obtained from diffuse reflectance spectroscopy. Large apparent energy shifts between onsets and PL were noted, being significant for smaller NCs (≤∼4.0 nm). This, along with comparatively "softer" onsets, is commensurate with density of states elongation around PL peaks associated with increasing confinement predicted for indirect semiconductor nanostructures. Tauc analyses of absorption additionally revealed three distinguishable optical transitions in all NCs: attributed to indirect Γ25'-Δ1 in lower energy ranges (likely the emission progenitor), indirect Γ25'-L1 overtaken by quasi-direct Γ-X wave function mixing for NC diameters ≤∼4.0 nm within the midenergy regime, and direct Γ25'-Γ15 transitions at energies nearing and above ∼3 eV.

Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications

Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.

Cost-Effective Ultrabright Silicon Quantum Dots and Highly Efficient LEDs from Low-Carbon Hydrogen Silsesquioxane Polymers

Cost-effective methods of synthesizing bright colloidal silicon quantum dots (SiQDs) for use as heavy-metal-free QDs, which have applications as light sources in biomedicine and displays, are required. We report simple protocols for synthesizing ultrabright colloidal SiQDs and fabricating SiQD LEDs based on hydrogen silsesquioxane (HSQ) polymer synthesis. Red photoluminescence with a quantum yield (PLQY) of 60-80% and LEDs with an external quantum efficiency (EQE) of >10% were obtained at 1/3600th of the cost of existing methods. This was achieved by using HSiCl3 and a low-polarity solvent to prepare the HSQ polymer and by optimizing the LED hole-injection layer thickness. A stochastic analysis of 31 SiQD syntheses revealed that SiQDs with the highest PLQYs were obtained from a hard, low-carbon HSQ polymer precursor containing many Si-H groups and cage structures. Notably, simple FTIR measurements predicted whether a HSQ polymer would yield high-PLQY SiQDs and high-EQE LEDs. These straightforward, cost-effective protocols should lead to advances in SiQD synthesis and LED fabrication methods.

Luminescent Mechanism and Anti-Counterfeiting Application of Hydrophilic, Undoped Room-Temperature Phosphorescent Silicon Nanocrystals

Silicon nanocrystals (SiNCs) have attracted extensive attention in many advanced applications due to silicon's high natural abundance, low toxicity, and impressive optical properties. However, these applications are mainly focused on fluorescent SiNCs, little attention is paid to SiNCs with room-temperature phosphorescence (RTP) and their relative applications, especially water-dispersed ones. Herein, this work presents water-dispersible RTP SiNCs (UA-SiNCs) and their optical applications. The UA-SiNCs with a uniform particle size of 2.8 nm are prepared by thermal hydrosilylation between hydrogen-terminated SiNCs (H-SiNCs) and 10-undecenoic acid (UA). Interestingly, the resultant UA-SiNCs can exhibit tunable long-lived RTP with an average lifetime of 0.85 s. The RTP feature of the UA-SiNCs is confirmed to the n-π* transitions of their surface C═O groups. Subsequently, new dual-modal emissive UA-SiNCs-based ink is fabricated by blending with sodium alginate (SA) as the binder. The customized anticounterfeiting labels are also prepared on cellulosic substrates by screen-printing technique. As expected, UA-SiNCs/SA ink exhibits excellent practicability in anticounterfeiting applications. These findings will trigger the rapid development of RTP SiNCs, envisioning enormous potential in future advanced applications such as high-level anti-counterfeiting, information encryption, and so forth.

The luminescence mechanism of ligand-induced interface states in silicon quantum dots

Over decades of research on photoluminescence (PL) of silicon quantum dots (Si-QDs), extensive exploratory experiments have been conducted to find ways to improve the photoluminescence quantum yield. However, the complete physical picture of Si-QD luminescence is not yet clear and needs to be studied in depth. In this work, which considers the quantum size effect and surface effect, the optical properties of Si-QDs with different sizes and surface terminated ligands were calculated based on first principles calculations. The results show that there are significant differences in the emission wavelength and emission intensity of Si-QD interface states connected by different ligands, among which the emission of silicon-oxygen double bonds is the strongest. When the size of the Si-QD increases, the influence of the surface effect weakens, and only the silicon-oxygen double bonds still localize the charge near the ligand, maintaining a high-intensity luminescence. In addition, the presence of surface dangling bonds also affects luminescence. This study deepens the understanding of the photoluminescence mechanism of Si-QDs, and provides a direction for both future improvement of the photoluminescence quantum efficiency of silicon nanocrystals and for fabricating silicon-based photonic devices.

Silicon nanoparticles as a fluorometric probe for sensitive detection of cyanide ion and its application in C. elegans bio-imaging

In recent years, silicon nanoparticles (Si NPs) have been explored as a promising alternative to traditional organic fluorophores in optical sensing and bioimaging applications owing to their exceptional optical properties and negligible toxicity. In this study, water-dispersible Si NPs were prepared from a 3-aminopropyl trimethoxysilane precursor using a facile one-pot process. The as-prepared Si NPs exhibited excitation-wavelength-dependent fluorescence properties and bright green fluorescence at 530 nm upon excitation at 420 nm. The fluorescence properties of Si NPs remained unperturbed under various physiological conditions, such as varying pH, ionic strength, and incubation time. A sensitive fluorometric turn-off sensor for cyanide ion (CN^-) detection was devised based on the unique fluorescence properties of Si NPs. The Si NPs-based detection assay showed a good linear response toward CN^- ranging between 0 and 33 μM, with a limit of detection as low as 0.90 nM. Caenorhabditis elegans is used as a model organism to evaluate the in vivo toxicity and molecular imaging capability of Si NPs.

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO₂) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO₂ (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron-hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Achieving High-Efficiency Large-Area Luminescent Solar Concentrators

Luminescent solar concentrators (LSCs) are semitransparent windows that are able to generate electricity from sunlight absorption. LSCs have shown huge promise for realizing building-integrated photovoltaics (BIPV). Unfortunately, to date, the power conversion efficiency (PCE) of LSCs is still very low which dramatically hampers their practical applications. In this Perspective, We summarize and review the latest developments of LSCs by looking at different structures. Among others, we focus more on the next developments in the field of LSCs, i.e., the possibility of high PCE, large area, mass production, and durability needed for future industrial development. We hope to promote the application of uniform testing standards and to draw attention to industrial development, toxicity, and durability. Then, we will provide a critical assessment of the field of LSCs. Finally, the challenge and solution will be discussed.

Postproduction Approach to Enhance the External Quantum Efficiency for Red Light-Emitting Diodes Based on Silicon Nanocrystals

Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high quantum yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, their low optical absorbance character inhibits the bright emission from the SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, a strong electroluminescence is potentially given by serving SiQDs as an emissive layer of current-driven LEDs with (Si-QLEDs) because the charged carriers are supplied from electrodes unlike absorption of light. Herein, we report that the external quantum efficiency (EQE) of Si-QLED was enhanced up to 12.2% by postproduction effect which induced by continuously applied voltage at 5 V for 9 h. The active layer consisted of SiQDs with a diameter of 2.0 nm. Observation of the cross-section of the multilayer QLEDs device revealed that the interparticle distance between adjacent SiQDs in the emissive layer is reduced to 0.95 nm from 1.54 nm by “post-electric-annealing”. The shortened distance was effective in promoting charge injection into the emission layer, leading improvement of the EQE.