1
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Tan C, Yang Z, Wu H, Yang Y, Yang L, Wang Z. Electrically tunable interlayer recombination and tunneling behavior in WSe 2/MoS 2 heterostructure for broadband photodetector. NANOSCALE 2024; 16:6241-6248. [PMID: 38449431 DOI: 10.1039/d3nr06144b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Electrically tunable band structure and light-matter interaction are of great importance in designing novel devices and constructing high-integrated and high-performance photodetector systems in the future. However, tunable mechanisms on the layered semiconductor, especially the heterojunction, are still unclear. Herein, the WSe2/MoS2 phototransistor with dual-gated configuration is fabricated, and its electrical and photoelectrical conversion has been studied to show large tunability. It was found that conduction and rectification characteristics can be tuned by dual gates showing four states, p-i, p-n, i-n, and n-n, as a result of the charging and depletion of WSe2 and MoS2. The rectifying ratio can be modulated across a large range from 102.5 to 10-3.2. Its photoelectronic characteristics were observed to exhibit bipolar and wavelength-dependent behaviors. The interlayer recombination of charge carriers dominates the photoresponse of the device under the illumination of visible light, while it is dominated by interlayer tunneling under the illumination of near-infrared wavelengths. This bipolar photoresponse is associated with different states of band alignment, which can be switched by dual-gating modulation. Finally, by tuning the gate voltage, responsivities reach 27 445 A W-1 and 2827 A W-1 at wavelengths of 400 and 1010 nm at room temperature, respectively, which directly extends the response region from visible light to near-infrared.
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Affiliation(s)
- Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Haijuan Wu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Yong Yang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
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2
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Long PX, Lai YY, Kang PH, Chuang CH, Cheng YJ. High photoresponsivity MoS 2phototransistor through enhanced hole trapping HfO 2gate dielectric. NANOTECHNOLOGY 2023; 35:025204. [PMID: 37816338 DOI: 10.1088/1361-6528/ad01c2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Accepted: 10/09/2023] [Indexed: 10/12/2023]
Abstract
Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.
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Affiliation(s)
- Pei-Xuan Long
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yung-Yu Lai
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Pei-Hao Kang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Chi-Huang Chuang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yuh-Jen Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
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3
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Liu W, Luo S, Qi X, Guo G, Li J, Tang H, Li X, Huang X, Tang Z, Zhong J. Inversion Symmetry and Exotic Interlayer Exciton Behavior in Twisted Trilayer MoS 2 Produced by Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4724-4732. [PMID: 36629832 DOI: 10.1021/acsami.2c18687] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Two-dimensional materials (2DMs) that are stacked vertically with a certain twist angle provide new degrees of freedom for designing novel physical properties. Twist-related properties of homogeneous bilayer and heterogeneous bilayer 2DMs, such as excitons and phonons, have been described in many pioneering works. However, twist-related properties of homogeneous trilayer 2DMs have been rarely reported. In this work, trilayer MoS2 with the twisted angle of 12° by optimized vapor deposition rather than the conventional mechanical stacking method was successfully fabricated. The inversion symmetry of trilayer MoS2 is changed by twist. Phonons and excitons produced by twist have an enormous influence on the interlayer interaction of trilayer MoS2, making trilayer MoS2 appear to have exotic optical properties. Compared with monolayer MoS2, the phonon vibration and photoluminescence intensity of trilayer MoS2 with one-interlayer-twisted are significantly improved, and the second harmonic generation response in the non-twist region of trilayer MoS2 is ∼3 times that of monolayer MoS2. In addition, interlayer coupling, inversion symmetry, and exciton behavior of the twist region show regional differences. This work provides a new way for designing twist and exploring the influence of twist on the structures of 2DMs with few layers.
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Affiliation(s)
- Weiyang Liu
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Siwei Luo
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Gencai Guo
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Jun Li
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Han Tang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Xu Li
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Xixi Huang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Zhiyuan Tang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
| | - Jianxin Zhong
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China
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4
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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5
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Tan C, Tao R, Yang Z, Yang L, Huang X, Yang Y, Qi F, Wang Z. Tune the photoresponse of monolayer MoS2 by decorating CsPbBr3 perovskite nanoparticles. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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6
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He L, Xie Z, Long X, Zhang C, He C, Zhao B, Qi F, Zhang N. Charge transport properties of SARS-CoV-2 Delta variant (B.1.617.2). Process Biochem 2022; 121:656-660. [PMID: 35965635 PMCID: PMC9364919 DOI: 10.1016/j.procbio.2022.08.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 07/21/2022] [Accepted: 08/08/2022] [Indexed: 11/21/2022]
Abstract
The B.1.617.2 (Delta) variant of concern is causing a new wave of infections in many countries. In order to better understand the changes of the SARS-CoV-2 mutation at the genetic level, we selected six mutations in the S region of the Delta variant compared with the native SARS-CoV-2 and get the conductance information of these six short RNA oligonucleotides groups by construct RNA: DNA hybrids. The electronic characteristics are investigated by the combination of density functional theory and non-equilibrium Green's function formulation with decoherence. We found that conductance is very sensitive to small changes in virus sequence. Among the 6 mutations in the Delta S region, D950N shows the largest change in relative conductance, reaching a surprising 4104.75%. These results provide new insights into the Delta variant from the perspective of its electrical properties. This may be a new method to distinguish virus variation and possess great research prospects.
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Affiliation(s)
- Lijun He
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Zhiyang Xie
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xing Long
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Chaopeng Zhang
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Chengyun He
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Boyang Zhao
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Fei Qi
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Nan Zhang
- The School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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7
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Suleman M, Lee S, Kim M, Nguyen VH, Riaz M, Nasir N, Kumar S, Park HM, Jung J, Seo Y. NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS 2 Crystals Using Confined-Space CVD. ACS OMEGA 2022; 7:30074-30086. [PMID: 36061644 PMCID: PMC9434612 DOI: 10.1021/acsomega.2c03108] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2022] [Accepted: 08/10/2022] [Indexed: 06/15/2023]
Abstract
Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS2) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS2 remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS2 in a controlled manner. Herein, we report the large-scale growth of MoS2 with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS2 are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS2 are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS2 show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS2 and opens the way for its various optoelectronic and electronic applications.
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Affiliation(s)
- Muhammad Suleman
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Sohee Lee
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Minwook Kim
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Van Huy Nguyen
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Muhammad Riaz
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Naila Nasir
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Sunil Kumar
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Hyun Min Park
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Jongwan Jung
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
| | - Yongho Seo
- Department of Nanotechnology
and Advanced Materials Engineering, and HMC, Sejong University, 05006 Seoul, South Korea
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8
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Shen Z, Zhang C, Meng Y, Wang Z. Highly Tunable, Broadband, and Negative Photoresponse MoS 2 Photodetector Driven by Ion-Gel Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32412-32419. [PMID: 35816428 DOI: 10.1021/acsami.2c08341] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Revealing the light-matter interaction of molybdenum disulfide (MoS2) and further improving its tunability facilitate the construction of highly integrated optoelectronics in communication and wearable healthcare, but it still remains a significant challenge. Herein, polyvinylidene fluoride and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (PVDF-EMIM-TFSI) ion-gel are employed to replace the oxide to fabricate a MoS2-based phototransistor. The high capacitance enables a large tunability of the carrier concentration that results in ambipolar transport of MoS2. It is found that the photoelectrical effect of the MoS2 ion-gel phototransistor can be greatly tuned by the gate voltage including its photoresponsivity, detectivity, and response wavelength. An abnormal negative photoelectrical effect in both the electron branch and the hole branch is observed which is due to the adsorption/desorption of the C2F6NO4S2- ion. By tuning the carrier concentration, the photoresponse can be extended from the visible region to the short infrared region. At 1200 nm, the photoresponse and detectivity can be tuned as large as 0.90 A/W and 1.88 × 1011 Jones, respectively. Ultimately, by combining the tunability of gate voltage and wavelength, it is demonstrated that the photoelectrical effect is dominated by the photogating effect in the hole carrier, while it is coregulated by a photogating and photothermal effect in electron carrier. This study provides new insights for developing a highly tunable broadband photodetector with low consumption.
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Affiliation(s)
- Zhenzhen Shen
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Chunchi Zhang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Yajing Meng
- Mental Health Center and Psychiatric Laboratory, the State Key Laboratory of Biotherapy, West China Hospital of Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
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9
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Study on high-speed atomic force microscope system with ultra-short mechanical loop. APPLIED NANOSCIENCE 2022. [DOI: 10.1007/s13204-022-02534-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
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10
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Chang Y, Zhou Y, Wang J, Zhai W. Constructing a High-Quality t-Se/Si Interface Via In Situ Light Annealing of a-Se for a Self-Powered Image Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201714. [PMID: 35599380 DOI: 10.1002/smll.202201714] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Revised: 04/13/2022] [Indexed: 06/15/2023]
Abstract
The quality of the interface, e.g., the semiconductor-semiconductor or metal-semiconductor interface, is the main factor restricting the photodetection performance of a heterojunction. In this study, a high-quality Se/Si interface is constructed via in situ directional transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate via light annealing. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the t-Se/Si heterojunction exhibits an extremely high responsivity and detectivity of 583.33 mA W-1 and 8.52 × 1012 Jones at 760 nm, respectively. In addition, the device exhibits an ultrafast rise time of 183 µs and a decay time of 405 µs. Furthermore, an image sensor fabricated via local light annealing successfully recognizes patterns of "N," "P," and "U." This study provides valuable guidance for the construction of high-quality interfaces and the design of self-powered image sensors.
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Affiliation(s)
- Yu Chang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yingcai Zhou
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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