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Wei Y, Li Z, Chen Z, Gao P, Ma Q, Gao M, Yan C, Chen J, Wu Z, Jiang Y, Yu X, Zhang X, Liu Y, Yang Y, Gao M, Sun W, Pan H. Polymeric Electronic Shielding Layer Enabling Superior Dendrite Suppression for All-Solid-State Lithium Batteries. ACS NANO 2024. [PMID: 38334290 DOI: 10.1021/acsnano.4c00279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
LiBH4 is one of the most promising candidates for use in all-solid-state lithium batteries. However, the main challenges of LiBH4 are the poor Li-ion conductivity at room temperature, excessive dendrite formation, and the narrow voltage window, which hamper practical application. Herein, we fabricate a flexible polymeric electronic shielding layer on the particle surfaces of LiBH4. The electronic conductivity of the primary LiBH4 is reduced by 2 orders of magnitude, to 1.15 × 10-9 S cm-1 at 25 °C, due to the high electron affinity of the electronic shielding layer; this localizes the electrons around the BH4- anions, which eliminates electronic leakage from the anionic framework and leads to a 68-fold higher critical electrical bias for dendrite growth on the particle surfaces. Contrary to the previously reported work, the shielding layer also ensures fast Li-ion conduction due to the fast-rotational dynamics of the BH4- species and the high Li-ion (carrier) concentration on the particle surfaces. In addition, the flexibility of the layer guarantees its structural integrity during Li plating and stripping. Therefore, our LiBH4-based solid-state electrolyte exhibits a high critical current density (11.43 mA cm-2) and long cycling stability of 5000 h (5.70 mA cm-2) at 25 °C. More importantly, the electrolyte had a wide operational temperature window (-30-150 °C). We believe that our findings provide a perspective with which to avoid dendrite formation in hydride solid-state electrolytes and provide high-performance all-solid-state lithium batteries.
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Affiliation(s)
- Yiqi Wei
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhenglong Li
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
| | - Zichong Chen
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Panyu Gao
- Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Qihang Ma
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Mingxi Gao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chenhui Yan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jian Chen
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
| | - Zhijun Wu
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
| | - Yinzhu Jiang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xuebin Yu
- Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Xin Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yongfeng Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yaxiong Yang
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
| | - Mingxia Gao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Wenping Sun
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hongge Pan
- Institute of Science and Technology for New Energy, Xi'an Technological University, Xi'an 710021, China
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
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