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He Y, Zhao F, Huang B, Zhang T, Zhu H. A Review of β-Ga 2O 3 Power Diodes. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1870. [PMID: 38673227 PMCID: PMC11052528 DOI: 10.3390/ma17081870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 04/15/2024] [Accepted: 04/15/2024] [Indexed: 04/28/2024]
Abstract
As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7-4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.
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Affiliation(s)
- Yongjie He
- School of Microelectronics, Fudan University, Shanghai 200433, China; (Y.H.); (F.Z.); (B.H.); (T.Z.)
| | - Feiyang Zhao
- School of Microelectronics, Fudan University, Shanghai 200433, China; (Y.H.); (F.Z.); (B.H.); (T.Z.)
| | - Bin Huang
- School of Microelectronics, Fudan University, Shanghai 200433, China; (Y.H.); (F.Z.); (B.H.); (T.Z.)
| | - Tianyi Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China; (Y.H.); (F.Z.); (B.H.); (T.Z.)
| | - Hao Zhu
- School of Microelectronics, Fudan University, Shanghai 200433, China; (Y.H.); (F.Z.); (B.H.); (T.Z.)
- National Integrated Circuit Innovation Center, Shanghai 201203, China
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Kim B, Kim S, Lee TH, Yang D, Lee D, Sohn W, Yoon E, Park Y, Jang HW. Enhancing Performance of Ultraviolet C Photodetectors Through Single-Domain Epitaxy of Monoclinic β-Ga 2 O 3 Films and Tailored Anti-Reflection Coating. SMALL METHODS 2023:e2300933. [PMID: 37882332 DOI: 10.1002/smtd.202300933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/16/2023] [Indexed: 10/27/2023]
Abstract
Implementing high-performance ultraviolet C photodetectors (UVC PDs) based on β-Ga2 O3 films is challenging owing to the anisotropic crystal symmetry between the epitaxial films and substrates. In this study, highly enhanced state-of-the-art photoelectrical performance is achieved using single-domain epitaxy of monoclinic β-Ga2 O3 films on a hexagonal sapphire substrate. Unlike 3D β-Ga2 O3 films with twin domains, 2D β-Ga2 O3 films exhibit a single domain with a smooth surface and low concentration of point defects, which enable efficient charge separation by suppressing boundary-induced recombination. Furthermore, a tailored anti-reflection coating (ARC) is adopted as a light-absorbing medium to improve charge generation. The tailored nanostructure, which features a gradient refractive index, not only substantially reduces the reflection, but also suppresses the surface leakage current as a passivation layer. This study provides fundamental insights into the single-domain epitaxy of β-Ga2 O3 films and the application of ARC for the development of high-performance UVC PDs.
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Affiliation(s)
- Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Duyoung Yang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Dongyup Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Woonbae Sohn
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Euijoon Yoon
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yongjo Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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Rajabi Kalvani P, Parisini A, Sozzi G, Borelli C, Mazzolini P, Bierwagen O, Vantaggio S, Egbo K, Bosi M, Seravalli L, Fornari R. Interfacial Properties of the SnO/κ-Ga 2O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2O 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:45997-46009. [PMID: 37733937 PMCID: PMC10561148 DOI: 10.1021/acsami.3c08841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 09/07/2023] [Indexed: 09/23/2023]
Abstract
The interfacial properties of a planar SnO/κ-Ga2O3 p-n heterojunction have been investigated by capacitance-voltage (C-V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental C-V data. The doping profile extracted from the C-V data shows a nonuniformity at the junction interface that was attributed to a depletion of subsurface net donors at the n-side of the diode. This attribution was corroborated by doping profiles and carrier distributions in the n and p sides of the heterojunction obtained from the simulation of the measured C-V data by the Synopsys Sentaurus-TCAD suite. Hall effect measurements and Hg-probe C-V investigation on single κ-Ga2O3 layers, either as-grown or submitted to thermal treatments, support the hypothesis of the subsurface donor reduction during the SnO deposition. This study can shed light on the subsurface doping density variation in κ-Ga2O3 due to high-temperature treatment. The investigation of the SnO/κ-Ga2O3 heterointerface provides useful hints for the fabrication of diodes based on κ-Ga2O3. The methodological approach presented here is of general interest for reliable characterization of planar diodes.
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Affiliation(s)
- Payam Rajabi Kalvani
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
| | - Antonella Parisini
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
| | - Giovanna Sozzi
- University
of Parma, Department of Engineering and
Architecture, Parco Area
delle Scienze 181/A, 43124 Parma, Italy
| | - Carmine Borelli
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
| | - Piero Mazzolini
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
- IMEM-CNR,
Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - Oliver Bierwagen
- Paul-Drude-Institut
für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Salvatore Vantaggio
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
| | - Kingsley Egbo
- Paul-Drude-Institut
für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Matteo Bosi
- IMEM-CNR,
Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - Luca Seravalli
- IMEM-CNR,
Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy
| | - Roberto Fornari
- University
of Parma, Department of Mathematical,
Physical and Computer Sciences, Parco Area delle Scienze 7/A, 43124 Parma, Italy
- IMEM-CNR,
Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy
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Zhang Z, Yan P, Song Q, Chen H, Zhang W, Yuan H, Du F, Liu D, Chen D, Zhang Y. Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method. FUNDAMENTAL RESEARCH 2023. [DOI: 10.1016/j.fmre.2023.01.001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/27/2023] Open
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Jamwal NS, Kiani A. Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications. NANOMATERIALS 2022; 12:nano12122061. [PMID: 35745408 PMCID: PMC9229744 DOI: 10.3390/nano12122061] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/11/2022] [Accepted: 06/13/2022] [Indexed: 12/04/2022]
Abstract
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.
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Affiliation(s)
- Nishant Singh Jamwal
- Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada;
- Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G0C5, Canada
| | - Amirkianoosh Kiani
- Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada;
- Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G0C5, Canada
- Correspondence:
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