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Wen D, Yuan R, Cao K, Yang F, Chen R. Advancements in atomic-scale interface engineering for flexible electronics: enhancing flexibility and durability. NANOTECHNOLOGY 2024; 35:412501. [PMID: 39025081 DOI: 10.1088/1361-6528/ad64db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Accepted: 07/18/2024] [Indexed: 07/20/2024]
Abstract
Flexible electronics, such as wearable displays, implantable electronics, soft robots, and smart skin, have garnered increasing attention. Despite notable advancements in research, a bottleneck remains at the product level due to the prevalent use of polymer-based materials, requiring encapsulation films for lifespan extension and reliable performance. Multilayer composites, incorporating thin inorganic layers to maintain low permeability towards moisture, oxygen, ions, etc, exhibit potential in achieving highly flexible barriers but encounter challenges stemming from interface instability between layers. This perspective offers a succinct review of strategies and provides atomic-scale interface modulation strategy utilizing atomic layer integration technology focused on enhancing the flexibility of high-barrier films. It delves into bendable multilayers with atomic-scale interface modulation strategies, encompassing internal stress and applied stress modulation, as well as stretchable composite structural designs such as gradient/hybrid, wavy, and island. These strategies showcase significant improvements in flexibility from bendable to stretchable while maintaining high barrier properties. Besides, optimized manufacturing methods, materials, and complex structure design based on atomic-scale interface engineering are provided, better aligning with the future development of flexible electronics. By laying the groundwork for these atomic-scale strategies, this perspective contributes to the evolution of flexible electronics, enhancing their flexibility, durability, and functionality.
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Affiliation(s)
- Di Wen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Ruige Yuan
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Kun Cao
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Fan Yang
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
| | - Rong Chen
- State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, People's Republic of China
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Lin Z, Song C, Liu T, Shao J, Zhu M. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al 2O 3/HfO 2/SiO 2 and HfO 2/Al 2O 3/SiO 2 Trilayers for Ultraviolet Laser Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31756-31767. [PMID: 38837185 DOI: 10.1021/acsami.4c03747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
High-performance thin films combining large optical bandgap Al2O3 and high refractive index HfO2 are excellent components for constructing the next generation of laser systems with enhanced output power. However, the growth of low-defect plasma-enhanced-atomic-layer-deposited (PEALD) Al2O3 for high-power laser applications and its combination with HfO2 and SiO2 materials commonly used in high-power laser thin films still face challenges, such as how to minimize defects, especially interface defects. In this work, substrate-layer interface defects in Al2O3 single-layer thin films, layer-layer interface defects in Al2O3-based bilayer and trilayer thin films, and their effects on the laser-induced damage threshold (LIDT) were investigated via capacitance-voltage (C-V) measurements. The experimental results show that by optimizing the deposition parameters, specifically the deposition temperature, precursor exposure time, and plasma oxygen exposure time, Al2O3 thin films with low defect density and high LIDT can be obtained. Two trilayer anti-reflection (AR) thin film structures, Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2, were then prepared and compared. The trilayer AR thin film with Al2O3/HfO2/SiO2 structure exhibits a lower interface defect density, better interface bonding performance, and an increase in LIDT by approximately 2.8 times. We believe these results provide guidance for the control of interface defects and the design of thin film structures and will benefit many thin film optics for laser applications.
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Affiliation(s)
- Zesheng Lin
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Song
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Tianbao Liu
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianda Shao
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- CAS Center for Excellence in Ultra-intense Laser Science, Shanghai 201800, China
| | - Meiping Zhu
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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Gerold K, Beladiya V, Paul P, Kästner D, Saarniheimo M, Niiranen K, Schröder S, Szeghalmi A. Conformal antireflection coatings for optical dome covers by atomic layer deposition. APPLIED OPTICS 2023; 62:B92-B96. [PMID: 37132891 DOI: 10.1364/ao.477069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Complex 3D-shaped optics are difficult to coat with conventional technologies. In this research, large top-open optical glass cubes with a 100 mm side length were functionalized to simulate large dome-shaped optics. Antireflection coatings for the visible range (420-670 nm) and for a single wavelength (550 nm) were applied by atomic layer deposition simultaneously on two and six demonstrators, respectively. Reflectance measurements on both the inner and outer glass surfaces confirm a conformal AR coating with a residual reflectance significantly below 0.3% for visible wavelengths and 0.2% for single wavelengths on nearly the entire surface of the cubes.
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