Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers

Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb)2Te3 Thermoelectric Films

Micro thermoelectric devices are expected to further improve the cooling density for the temperature control of electronic devices; nevertheless, the high contact resistivity between metals and semiconductors critically limits their applications, especially in chip cooling with extremely high heat flux. Herein, based on the calculated results, a low specific contact resistivity of ∼10-7 Ω cm2 at the interface is required to guarantee a desirable cooling power density of micro devices. Thus, we developed a generally applicable interfacial modulation strategy via localized surface doping of thermoelectric films, and the feasibility of such a doping approach for both n/p-type (Bi,Sb)2Te3 films was demonstrated, which can effectively increase the surface-majority carrier concentration explained by the charge transfer mechanism. With a proper doping level, ultralow specific contact resistivities at the interfaces are obtained for n-type (6.71 × 10-8 Ω cm2) and p-type (3.70 × 10-7 Ω cm2) (Bi,Sb)2Te3 layers, respectively, which is mainly attributed to the carrier tunneling enhancement with a narrowed interfacial contact barrier width. This work provides an effective scheme to further reduce the internal resistance of micro thermoelectric coolers, which can also be extended as a kind of universal interfacial modification technique for micro semiconductor devices.

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

Tungsten transition metal dichalcogenides (W-TMDs) are intriguing due to their properties and potential for application in next-generation electronic devices. However, strong Fermi level (EF) pinning manifests at the metal/W-TMD interfaces, which could tremendously restrain the carrier injection into the channel. In this work, we illustrate the origins of EF pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. We conclude that the origins of EF pinning at a covalent contact metal/W-TMD interface, such as Ni/W-TMDs, can be attributed to defects, impurities, and interface reaction products. In contrast, for a van der Waals contact metal/TMD system such as Ag/W-TMDs, the primary factor responsible for EF pinning is the electronic modification of the TMDs resulting from the defects and impurities with the minor impact of metal-induced gap states. The potential strategies for carefully engineering the metal deposition approach are also discussed. This work unveils the origins of EF pinning at metal/TMD interfaces experimentally and theoretically and provides guidance on further enhancing and improving the device performance.

DFT Simulation of a Gold Electrode Vapor-Deposition Growth Process and the Effect of Defects on the Electrode Work Function

While two-dimensional (2D) semiconductors are explored as field-effect transistor (FET) channel materials for decreasing the short channel effects, electrical contact with 2D semiconductors is a major issue. Many efforts have been made toward this issue. However, the discrepancy in the contact type and the Schottky barrier height from the same contact is present in experiments. This discrepancy supposedly should be associated with the vapor-deposition electrode structures, on which little attention had been focused. Here, the crystal growth of the gold vapor-deposition electrode is simulated by adding gold atoms to the gold substrate one by one in the framework of density functional theory, and for every step, the spontaneously searching adsorption site method is used to find thermodynamically stable adsorption sites and the climbing nudged elastic band method is used to find kinetically stable ones. Simulation shows that the Au(111) face grows according to the ABC sequence packing, and possible defects are interstitial, vacancy, and the partly filled nascent layer (PFNL). These defects have an unequal effect on the electrode work function. The PFNL may be a non-negligible factor responsible for the discrepancy.

SO2-Driven In Situ Formation of Superstable Hg3Se2Cl2 for Effective Flue Gas Mercury Removal

Flue gas mercury removal is mandatory for decreasing global mercury background concentration and ecosystem protection, but it severely suffers from the instability of traditional demercury products (e.g., HgCl₂, HgO, HgS, and HgSe). Herein, we demonstrate a superstable Hg₃Se₂Cl₂ compound, which offers a promising next-generation flue gas mercury removal strategy. Theoretical calculations revealed a superstable Hg bonding structure in Hg₃Se₂Cl₂, with the highest mercury dissociation energy (4.71 eV) among all known mercury compounds. Experiments demonstrate its unprecedentedly high thermal stability (>400 °C) and strong acid resistance (5% H₂SO₄). The Hg₃Se₂Cl₂ compound could be produced via the reduction of SeO₃^2- to nascent active Se⁰ by the flue gas component SO₂ and the subsequent combination of Se⁰ with Hg⁰ and Cl^- ions or HgCl₂. During a laboratory-simulated experiment, this Hg₃Se₂Cl₂-based strategy achieves >96% removal efficiencies of both Hg⁰ and HgCl₂ enabling nearly zero Hg⁰ re-emission. As expected, real mercury removal efficiency under Se-rich industrial flue gas conditions is much more efficient than Se-poor counterparts, confirming the feasibility of this Hg₃Se₂Cl₂-based strategy for practical applications. This study sheds light on the importance of stable demercury products in flue gas mercury treatment and also provides a highly efficient and safe flue gas demercury strategy.

Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX3 (X = I, Br)/2D Metal Contacts

CrX₃ (X = I, Br) monolayers exhibit outstanding performance in spintronic devices. However, the Schottky barrier at the CrX₃/electrode interface severely impedes the charge injection efficiency. Herein, we propose two-dimensional (2D) metals as electrodes to form van der Waals (vdW) contact with CrX₃ monolayers and systematically explore the contact properties of CrX₃/metal by density functional theory (DFT) calculations. The results demonstrate that the strongly suppressed Fermi level pinning (FLP) effect and the wide-range tunable Schottky barrier can be achieved in CrX₃/metal contacts. Specifically, the n-type and the p-type Schottky contacts can be realized in CrX₃/metal contacts by choosing 2D metal electrodes with different work functions. Importantly, the pinning factors for CrX₃/metal contacts are exceptionally larger than other commonly studied 2D semiconductors, indicating the strongly suppressed FLP in CrX₃/metal contacts, which leads to the wide-range tunable Schottky barrier. Our findings provide guidance to the choice of electrodes and promote the development of CrX₃-based spin devices.