Selective Hydration of Rutile TiO2 as a Strategy for Site-Selective Atomic Layer Deposition

Enhanced photoelectrochemical performance of NiS-modified TiO2 nanorods with a surface charge accumulation facet

Photoelectrochemical (PEC) water splitting for hydrogen production technology is considered as one of the most promising solutions to energy shortage and environmental remediation. TiO2/NiS nanorod arrays were successfully prepared using hydrothermal deposition followed by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and photoluminescence (PL) spectra characterization studies indicate the successful deposition of NiS on TiO2 NRs. The NiS deposition on TiO2 was optimized by controlling the impregnation cycle. The optimal sample exhibits a photocurrent density of 1.16 mA cm-2 at 0.6 V vs. Ag/AgCl, which is a 1.9-fold enhancement over that of pristine TiO2 nanorod arrays. The enhanced photoelectrochemical performance can be attributed to two aspects. On the one hand, the (101) crystal plane of rutile TiO2 is the facet where photogenerated holes accumulate and is an efficient active plane for the oxygen evolution reaction; on the other hand, NiS is a narrow band gap semiconductor, and its deposition on TiO2 nanorods can further promote the separation and transport of photogenerated charge carriers.

Resolving the Heat Generated from ZrO2 Atomic Layer Deposition Surface Reactions

In situ pyroelectric calorimetry and spectroscopic ellipsometry were used to investigate surface reactions in atomic layer deposition (ALD) of zirconium oxide (ZrO₂ ). Calibrated and time-resolved in situ ALD calorimetry provides new insights into the thermodynamics and kinetics of saturating surface reactions for tetrakis(dimethylamino)zirconium(IV) (TDMAZr) and water. The net ALD reaction heat ranged from 0.197 mJ cm^-2 at 76 °C to 0.155 mJ cm^-2 at 158 °C, corresponding to an average of 4.0 eV/Zr at all temperatures. A temperature dependence for reaction kinetics was not resolved over the range investigated. The temperature dependence of net reaction heat and distribution among metalorganic and oxygen source exposure is attributed to factors including growth rate, equilibrium surface hydroxylation, and the extent of the reaction. ZrO₂ -forming surface reactions were investigated computationally using DFT methods to better understand the influence of surface hydration on reaction thermodynamics.

Resolving the Heat of Trimethylaluminum and Water Atomic Layer Deposition Half-Reactions

Atomic layer deposition (ALD) is a surface synthesis technique that is characterized by self-limiting reactions between gas-phase precursors and a solid substrate. Although ALD processes have been demonstrated that span the periodic table, a greater understanding of the surface chemistry that affords ALD is necessary to enable greater precision, including area- and site-selective growth. We offer new insight into the thermodynamics and kinetics of the trimethylaluminum (TMA) and H₂O ALD half-reactions with calibrated and time-resolved in situ pyroelectric calorimetry. The half-reactions produce 3.46 and 2.76 eV/Al heat, respectively, which is greater than the heat predicted by computational models based on crystalline Al₂O₃ substrates and closely aligned with the heat predicted by standard heats of formation. The pyroelectric thin-film calorimeter offers submillisecond temporal resolution that uniquely and clearly resolves precursor delivery and reaction kinetics. Both half-reactions are observed to exhibit multiple kinetic rates, with average TMA half-reaction rates at least 2 orders of magnitude faster than the H₂O half-reaction kinetics. Comparing the experimental heat with published computational literature and additional first-principles modeling highlights the need to refine our models and mechanistic understanding of even the most ubiquitous ALD reactions.