1
|
Wang J, Ba G, Meng J, Yang S, Tian S, Zhang M, Huang F, Zheng K, Pullerits T, Tian J. Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs. NANO LETTERS 2024; 24:8894-8901. [PMID: 38990690 DOI: 10.1021/acs.nanolett.4c01648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.
Collapse
Affiliation(s)
- Junfeng Wang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Guohang Ba
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Jie Meng
- Chemical Physics and Nano, Lund University, Lund 22100, Sweden
| | - Shixu Yang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Shuyu Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Mengqi Zhang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Fei Huang
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Kaibo Zheng
- Chemical Physics and Nano, Lund University, Lund 22100, Sweden
| | - Tõnu Pullerits
- Chemical Physics and Nano, Lund University, Lund 22100, Sweden
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China
| |
Collapse
|
2
|
Lee JE, Lee CJ, Lee SJ, Jeong UH, Park JG. Potassium Iodide Doping for Vacancy Substitution and Dangling Bond Repair in InP Core-Shell Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1055. [PMID: 38921931 PMCID: PMC11206699 DOI: 10.3390/nano14121055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Revised: 06/11/2024] [Accepted: 06/18/2024] [Indexed: 06/27/2024]
Abstract
This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In0.53P0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; VIn-) within the bulk of the core QD and inhibit the formation of InPOx at the core QD-Zn0.6Se0.4 shell interfaces. The photoluminescence quantum yield (PLQY) of ~97% and full width at half maximum (FWHM) of ~40 nm were achieved for In0.53P0.47/Zn0.6Se0.4/Zn0.6Se0.1S0.3/Zn0.5S0.5 core/multi-shell QDs emitting red light, which is essential for a quantum-dot organic light-emitting diode (QD-OLED) without red, green, and blue crosstalk. KI doping eliminated VIn- in the core QD bulk by forming K+-VIn- substitutes and effectively inhibited the formation of InPO4(H2O)2 at the core QD-Zn0.6Se0.4 shell interface through the passivation of phosphorus (P)-dangling bonds by P-I bonds. The elimination of vacancies in the core QD bulk was evidenced by the decreased relative intensity of non-radiative unpaired electrons, measured by electron spin resonance (ESR). Additionally, the inhibition of InPO4(H2O)2 formation at the core QD and shell interface was confirmed by the absence of the {210} X-ray diffraction (XRD) peak intensity for the core/multi-shell QDs. By finely tuning the doping concentration, the optimal level was achieved, ensuring maximum K-VIn- substitution, minimal K+ and I- interstitials, and maximum P-dangling bond passivation. This resulted in the smallest core QD diameter distribution and maximized optical properties. Consequently, the maximum PLQY (~97%) and minimum FWHM (~40 nm) were observed at 3% KI doping. Furthermore, the color gamut of a QD-OLED display using R-, G-, and B-QD functional color filters (i.e., ~131.1%@NTSC and ~98.2@Rec.2020) provided a nearly perfect color representation, where red-light-emitting KI-doped QDs were applied.
Collapse
Affiliation(s)
- Ji-Eun Lee
- Department of Information Display Engineering, Hanyang University, Seoul 04763, Republic of Korea;
| | - Chang-Jin Lee
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea; (C.-J.L.); (S.-J.L.); (U.-H.J.)
| | - Seung-Jae Lee
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea; (C.-J.L.); (S.-J.L.); (U.-H.J.)
- Samsung Electronics, 130 Samsung-ro, Suwon 16678, Republic of Korea
| | - Ui-Hyun Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea; (C.-J.L.); (S.-J.L.); (U.-H.J.)
| | - Jea-Gun Park
- Department of Information Display Engineering, Hanyang University, Seoul 04763, Republic of Korea;
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea; (C.-J.L.); (S.-J.L.); (U.-H.J.)
| |
Collapse
|
3
|
Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
Collapse
Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| |
Collapse
|
4
|
Hu R, He F, Hou R, Wu Z, Zhang X, Shen H. The Narrow Synthetic Window for Highly Homogenous InP Quantum Dots toward Narrow Red Emission. Inorg Chem 2024; 63:3516-3524. [PMID: 38316130 DOI: 10.1021/acs.inorgchem.3c04358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Low-toxicity InP-based quantum dots (QDs) exhibit potential for replacing Cd/Pb-containing QDs in the visible and near-infrared regions. Despite advancements, further improvement relies on synthesizing homogeneous InP QDs to achieve a high color purity. In a commonly employed two-step "seed-mediated" synthetic approach, we demonstrate the high sensitivity of InP seed sizes and size distribution to the quantities of trioctylphosphine (TOP) and tris(trimethylsilyl)phosphine [(TMS)3P], attributed to the process of "self-focusing of size distribution" and enhanced reactivity of In-oleate through coordination with TOP. During growth, the processes of size focusing and defocusing are modulated by the accumulation of oleic acid and TOP molecules, as well as the amount of (TMS)3P in the growth precursor, which may relate to the dissolution process of InP magic size clusters. Through precise control, the best valley/depth ratio of InP QDs was 0.52 at the first absorption peak at 571 nm, resulting in luminescence with a full width at half-maximum of 35 at 620 nm with an absolute photoluminescence quantum yield around 90% after heteroepitaxial growth with ZnSe and ZnS shells.
Collapse
Affiliation(s)
- Ranran Hu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| | - Fengkai He
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| | - Ruixue Hou
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| | - Zhenghui Wu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| | - Xiangtong Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| | - Huaibin Shen
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-Efficiency Display and Lighting Technology, School of Materials and Engineering, Collaborative Innovation Centre of Nano Functional Materials and Applications, Henan University, Kaifeng 475000, China
| |
Collapse
|
5
|
Yu P, Cao S, Wang Y, Zhao J. Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes. J Phys Chem Lett 2024; 15:201-211. [PMID: 38157217 DOI: 10.1021/acs.jpclett.3c03137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.
Collapse
Affiliation(s)
- Peng Yu
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou 215123, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University, Nanning 530004, China
| |
Collapse
|
6
|
Wei X, Zhang Q, Cui Z, Yang D, Mei S, Zhang W, Xie H, Yu K, Guo R, Wei W. Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation. Inorg Chem 2023; 62:15258-15266. [PMID: 37671490 DOI: 10.1021/acs.inorgchem.3c02455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Understanding the electronic structure of doped InP quantum dots (QDs) is essential to optimize the material for specific optoelectronic applications. However, current synthesis approaches are often tedious and unfavorable for rational tunning. Herein, a combination of experimental and computational studies was conducted to address the doping mechanism and surface passivation of InP QDs. The successful dopant introduction requires low Cu doping concentration and heavy Mn doping, while the Ag doping amount is relatively moderate. This may correspond to the theoretical doping formation energy presented as Cu (-2.52 eV) < Ag (-1.76 eV) < Mn (-0.38 eV). As for surface passivation, inorganic ions and shell-like ZnS are unraveled through simulational investigation. Chloride ion promotes oriented growth toward tetrahedron morphology while nitrate-passivated InP QDs exhibit blurry transmission electron microscope (TEM) morphology. Correspondingly, the binding energy of chloride ion with (111) facet is -2.13 eV significantly lower than those of (110) and (100) facets. Further, the additional Zn 3d bands are more involved in the formation of conduction band, which optimized the Mn-doped InP with a 0.32 eV bandgap. These experimental and model results provide more microscopic details of doped InP, which can motivate theoretically exact control of guest ion stoichiometry with optimized characteristics for electrical devices.
Collapse
Affiliation(s)
- Xian Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qi Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongjie Cui
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Dan Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Shiliang Mei
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Wanlu Zhang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Haijiao Xie
- Hangzhou Yanqu Information Technology Co., Ltd., Y2, 2nd Floor, Building 2, Xixi Legu Creative Pioneering Park, No. 712 Wen'er West Road, Hangzhou 310003, China
| | - Kehan Yu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
- Zhongshan-Fudan Joint Innovation Center, Zhongshan 528437, China
- Yiwu Research Institute of Fudan University, Yiwu 322000, China
| | - Wei Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| |
Collapse
|
7
|
Li SN, Pan JL, Yu YJ, Zhao F, Wang YK, Liao LS. Advances in Solution-Processed Blue Quantum Dot Light-Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101695. [PMID: 37242111 DOI: 10.3390/nano13101695] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 05/12/2023] [Accepted: 05/18/2023] [Indexed: 05/28/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs) have been identified as a next-generation display technology owing to their low-cost manufacturing, wide color gamut, and electrically driven self-emission properties. However, the efficiency and stability of blue QLEDs still pose a significant challenge, limiting their production and potential application. This review aims to analyse the factors leading to the failure of blue QLEDs and presents a roadmap to accelerate their development based on the progress made in the synthesis of II-VI (CdSe, ZnSe) quantum dots (QDs), III-V (InP) QDs, carbon dots, and perovskite QDs. The proposed analysis will include discussions on material synthesis, core-shell structures, ligand interactions, and device fabrication, providing a comprehensive overview of these materials and their development.
Collapse
Affiliation(s)
- Sheng-Nan Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Jia-Lin Pan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Yan-Jun Yu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Feng Zhao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Ya-Kun Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
| | - Liang-Sheng Liao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
| |
Collapse
|
8
|
Motomura G, Uematsu T, Kuwabata S, Kameyama T, Torimoto T, Tsuzuki T. Quantum-Dot Light-Emitting Diodes Exhibiting Narrow-Spectrum Green Electroluminescence by Using Ag-In-Ga-S/GaS x Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8336-8344. [PMID: 36732881 DOI: 10.1021/acsami.2c21232] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Quantum dots (QDs), which have high color purity, are expected to be applied as emitting materials to wide-color-gamut displays. To enable their use as an alternative to Cd-based QDs, it is necessary to improve the properties of QDs composed of low-toxicity materials. Although multielement QDs such as Ag-In-Ga-S are prone to spectrally broad emission from defect sites, a core/shell structure covered with a GaSx shell is expected to enable sharp emission from band-edge transitions. Here, QD light-emitting diodes (QD-LEDs) embedded with Ag-In-Ga-S/GaSx core/shell QDs (AIGS QDs) were fabricated, and their electroluminescence (EL) was observed. The EL spectra from the AIGS QD-LEDs were found to contain a large defect-related emission component not observed in the photoluminescence (PL) spectra of the AIGS QD films. This defect-related emission was caused by electrons injected into defect sites in the QDs. Therefore, the AIGS QDs and the electron injection layer (EIL) of ZnMgO were treated with Ga compounds such as gallium chloride (GaCl3) and gallium tris(N,N'-diethyldithiocarbamate) (Ga(DDTC)3) to improve the luminescence properties of the QD-LEDs. The added Ga compounds effectively compensated for defect sites on the surface of the QDs and suppressed direct electron injection from the EIL into defect sites. As a result, the defect-related emission components in the EL were successfully suppressed, and the EL exhibited a color purity comparable to the PL of the AIGS QD films. The QD-LEDs exhibited EL spectra with a full width at half-maximum of 33 nm, which is extremely sharp for a low-toxicity QD, and the chromaticity coordinates (0.260, 0.695) for green EL were achieved.
Collapse
Affiliation(s)
- Genichi Motomura
- Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo 157-8510, Japan
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Taro Uematsu
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Susumu Kuwabata
- Department of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
| | - Tatsuya Kameyama
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8603, Japan
| | - Tsukasa Torimoto
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Aichi 464-8603, Japan
| | - Toshimitsu Tsuzuki
- Science & Technology Research Laboratories, Japan Broadcasting Corporation (NHK), Tokyo 157-8510, Japan
| |
Collapse
|
9
|
Burkitt-Gray M, Casavola M, Clark PCJ, Fairclough SM, Flavell WR, Fleck RA, Haigh SJ, Ke JCR, Leontiadou M, Lewis EA, Osiecki J, Qazi-Chaudhry B, Vizcay-Barrena G, Wichiansee W, Green M. Structural investigations into colour-tuneable fluorescent InZnP-based quantum dots from zinc carboxylate and aminophosphine precursors. NANOSCALE 2023; 15:1763-1774. [PMID: 36601869 DOI: 10.1039/d2nr02803d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Fluorescent InP-based quantum dots have emerged as valuable nanomaterials for display technologies, biological imaging, and optoelectronic applications. The inclusion of zinc can enhance both their emissive and structural properties and reduce interfacial defects with ZnS or CdS shells. However, the sub-particle distribution of zinc and the role this element plays often remains unclear, and it has previously proved challenging to synthesise Zn-alloyed InP-based nanoparticles using aminophosphine precursors. In this report, we describe the synthesis of alloyed InZnP using zinc carboxylates, achieving colour-tuneable fluorescence from the unshelled core materials, followed by a one-pot ZnS or CdS deposition using diethyldithiocarbamate precursors. Structural analysis revealed that the "core/shell" particles synthesised here were more accurately described as homogeneous extended alloys with the constituent shell elements diffusing through the entire core, including full-depth inclusion of zinc.
Collapse
Affiliation(s)
- Mary Burkitt-Gray
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
- Centre for Ultrastructural Imaging, King's College London, New Hunt's House, London, SE1 1UL, UK
| | - Marianna Casavola
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
| | - Pip C J Clark
- The Photon Science Institute, School of Physics and Astronomy, University of Manchester, Schuster Building, Oxford Road, Manchester, M13 9PL, UK
| | - Simon M Fairclough
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
| | - Wendy R Flavell
- The Photon Science Institute, School of Physics and Astronomy, University of Manchester, Schuster Building, Oxford Road, Manchester, M13 9PL, UK
| | - Roland A Fleck
- Centre for Ultrastructural Imaging, King's College London, New Hunt's House, London, SE1 1UL, UK
| | - Sarah J Haigh
- Department of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Jack Chun-Ren Ke
- The Photon Science Institute, School of Physics and Astronomy, University of Manchester, Schuster Building, Oxford Road, Manchester, M13 9PL, UK
| | - Marina Leontiadou
- The Photon Science Institute, School of Physics and Astronomy, University of Manchester, Schuster Building, Oxford Road, Manchester, M13 9PL, UK
| | - Edward A Lewis
- Department of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Jacek Osiecki
- MAX IV Laboratory, Lund University, Box 118, 221 00 Lund, Sweden
| | - Basma Qazi-Chaudhry
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
| | - Gema Vizcay-Barrena
- Centre for Ultrastructural Imaging, King's College London, New Hunt's House, London, SE1 1UL, UK
| | - Wijittra Wichiansee
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
| | - Mark Green
- Department of Physics, King's College London, The Strand, London, WC2R 2LS, UK.
| |
Collapse
|