Highly Efficient Red Quantum Dot Light-Emitting Diodes by Balancing Charge Injection and Transport

Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods

Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).

Solution-processed colloidal quantum dots for internet of things

Colloidal quantum dots (CQDs) have been a hot research topic ever since they were successfully fabricated in 1993 via the hot injection method. The Nobel Prize in Chemistry 2023 was awarded to Moungi G. Bawendi, Louis E. Brus and Alexei I. Ekimov for the discovery and synthesis of quantum dots. The Internet of Things (IoT) has also attracted a lot of attention due to the technological advancements and digitalisation of the world. This review first aims to give the basics behind QD physics. After that, the history behind CQD synthesis and the different methods used to synthesize most widely researched CQD materials (CdSe, PbS and InP) are revisited. A brief introduction to what IoT is and how it works is also mentioned. Then, the most widely researched CQD devices that can be used for the main IoT components are reviewed, where the history, physics, the figures of merit (FoMs) and the state-of-the-art are discussed. Finally, the challenges and different methods for integrating CQDs into IoT devices are discussed, mentioning the future possibilities that await CQDs.

High-performance near-infrared OLEDs maximized at 925 nm and 1022 nm through interfacial energy transfer

Using a transfer printing technique, we imprint a layer of a designated near-infrared fluorescent dye BTP-eC9 onto a thin layer of Pt(II) complex, both of which are capable of self-assembly. Before integration, the Pt(II) complex layer gives intense deep-red phosphorescence maximized at ~740 nm, while the BTP-eC9 layer shows fluorescence at > 900 nm. Organic light emitting diodes fabricated under the imprinted bilayer architecture harvest most of Pt(II) complex phosphorescence, which undergoes triplet-to-singlet energy transfer to the BTP-eC9 dye, resulting in high-intensity hyperfluorescence at > 900 nm. As a result, devices achieve 925 nm emission with external quantum efficiencies of 2.24% (1.94 ± 0.18%) and maximum radiance of 39.97 W sr-1 m-2. Comprehensive morphology, spectroscopy and device analyses support the mechanism of interfacial energy transfer, which also is proved successful for BTPV-eC9 dye (1022 nm), making bright and far-reaching the prospective of hyperfluorescent OLEDs in the near-infrared region.

High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing

Quantum dot light-emitting diodes (QLEDs) have attracted increasing attention due to their excellent electroluminescent properties and compatibility with inkjet printing processes, which show great potential in applications of pixelated displays. However, the relatively low resolution of the inkjet printing technology limits its further development. In this paper, high-resolution QLEDs were successfully fabricated by electrohydrodynamic (EHD) printing. A pixelated quantum dot (QD) emission layer was formed by printing an insulating Teflon mesh on a spin-coated QD layer. The patterned QLEDs show a high resolution of 2540 pixels per inch (PPI), with a maximum external quantum efficiency (EQE) of 20.29% and brightness of 35816 cd/m2. To further demonstrate its potential in full-color display, the fabrication process for the QD layer was changed from spin-coating to EHD printing. The as-printed Teflon effectively blocked direct contact between the hole transport layer and the electron transport layer, thus preventing leakage currents. As a result, the device showed a resolution of 1692 PPI with a maximum EQE of 15.40%. To the best of our knowledge, these results represent the highest resolution and efficiency of pixelated QLEDs using inkjet printing or EHD printing, which demonstrates its huge potential in the application of high-resolution full-color displays.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes

Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.

Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Ultrathin (∼10 nm) insulating polymer films are commonly employed as an interfacial modification layer (IML) to improve charge balance and suppress interfacial exciton quenching in quantum dot light-emitting diodes (QLEDs). However, because the thickness is smaller than the energy transfer distance, interfacial exciton quenching is only partially suppressed, leading to the degrading of device performance. In this work, a thick (35 nm) inorganic CdS film is developed to serve as the IML of CdSe quantum-dot-based QLED. Benefiting from relatively low electron mobility and well-matched energy level, the CdS IML can effectively improve charge balance. In addition, because the thickness is larger than the energy transfer distance, interfacial exciton quenching can be completely blocked. As a result, the QLEDs with CdS IML exhibit a maximum EQE of 21.2% and a peak current efficiency of 24.2 cd A-1, which are about 1.32- and 1.4-fold higher than 16.1% and 17.3 cd A-1 of the devices without CdS IML, respectively. Our work offers an efficient method to completely block interfacial exciton quenching, which may open a new avenue for developing higher-performance QLEDs.

Phosphorescent-Dye-Sensitized Quantum-Dot Light-Emitting Diodes with 37% External Quantum Efficiency

Exciton harvesting is of paramount importance for quantum-dot light-emitting diodes (QLEDs). Direct exciton harvesting by the quantum dots (QDs) emitting layer suffers from poor hole injection due to the low conduction bands and valence bands of QDs, leading to unbalanced electron-hole injection and recombination. To address this issue, here, an exciton sensitizing approach is reported, where excitons form on a phosphorescent-dye-doped layer, which then transfer their energies to adjacent QDs layer for photon emission. Due to the very efficient exciton formation and energy-transfer processes, higher device performance can be achieved. To demonstrate the above strategy, red QLEDs with a phosphorescent dye, iridium (III) bis(2-methyldibenzo-[f,h]quinoxaline) (acetylacetonate), Ir(MDQ)2 (acac), doped hole-transporting layer are fabricated and studied. At a doping concentration of 10 wt%, the best device achieves record high current efficiency, power efficiency, and external quantum efficiency (EQE) of 37.3 cd A-1 , 41 lm W-1 , and 37%, respectively. Simultaneously, the efficiency roll-off characteristic is greatly improved, in that 35% EQE can be well retained at a high luminance level of 450 000 cd m-2 . Moreover, the devices also exhibit good stability and reproducibility.

Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics

Mn-doped CdTe (Mn-CdTe) quantum dot (QD) as well as quantum dot solid (QD solid) nanostructures are formed and the established structures are confirmed through HR-TEM analysis. The dynamics of charge carriers in both doped & undoped QD and QD solid structures were investigated by transient absorption (TA) spectroscopy. A slow band edge bleach recovery is obtained for Mn-doped CdTe QD and CdTe QD solid systems at room temperature. Additionally, a blue shifted broad bleach behaviour is identified for the Mn-CdTe QD solid system, which is attributed to hot exciton formation in the solid upon photoexcitation with a higher photon energy than the band gap energy (hν > Eg). This noteworthy process of generation of hot excitons and slow charge recombination occurs by means of a synergetic action of the Mn dopant in the host CdTe QD solid system as well as the extended electronic wave function between the coupled QD solid. Apart from the Mn-assisted delayed relaxation of hot electrons in the QD solid, a suppression in dark current as well as a high ION/IOFF ratio of 3203.12 at 1 V is observed in the Mn-CdTe QD-solid based photosensitized device in the visible region. Furthermore, we were able to improve the UV photon harvesting property in a narrow band gap Mn-CdTe QD solid through reducing the higher excited carrier's energy losses.

Monomer-mixed hole transport layers for improving hole injection of quantum dot light-emitting diodes

Quantum-dot light-emitting diodes (QLEDs) are promising components for next-generation displays and related applications. However, their performance is critically limited by inherent hole-injection barrier caused by deep highest-occupied molecular orbital levels of quantum dots. Herein, we present an effective method for enhancing the performance of QLEDs by incorporating a monomer (TCTA or mCP) into hole-transport layers (HTL). The impact of different monomer concentrations on the characteristics of QLEDs were investigated. The results indicate that sufficient monomer concentrations improve the current efficiency and power efficiency. The increased hole current using monomer-mixed HTL suggests that our method holds considerable potential for high-performance QLEDs.

Review: Quantum Dot Light-Emitting Diodes

Quantum dot light-emitting diodes (QD-LEDs) are one of the most promising self-emissive displays in terms of light-emitting efficiency, wavelength tunability, and cost. Future applications using QD-LEDs can cover a range from a wide color gamut and large panel displays to augmented/virtual reality displays, wearable/flexible displays, automotive displays, and transparent displays, which demand extreme performance in terms of contrast ratio, viewing angle, response time, and power consumption. The efficiency and lifetime have been improved by tailoring the QD structures and optimizing the charge balance in charge transport layers, resulting in theoretical efficiency for unit devices. Currently, longevity and inkjet-printing fabrication of QD-LEDs are being tested for future commercialization. In this Review, we summarize significant progress in the development of QD-LEDs and describe their potential compared to other displays. Furthermore, the critical elements to determine the performance of QD-LEDs, such as emitters, hole/electron transport layers, and device structures, are discussed comprehensively, and the degradation mechanisms of the devices and the issues of the inkjet-printing process were also investigated.

High-efficiency and high-resolution patterned quantum dot light emitting diodes by electrohydrodynamic printing

The development of quantum dot light-emitting diode (QLED) fabrication technologies for high-definition and low-cost displays is an important research topic. However, commercially available piezoelectric inkjet printing has reached its limit in reducing pixel sizes, which restricts its potential use in high-resolution displays. Here, we exhibit an electrohydrodynamic (EHD) printing method for manufacturing QLEDs with a high resolution of 500 ppi that remarkably surpasses the resolution of conventional inkjet printing displays. By optimizing the EHD printing process, a high-resolution pixelated bottom-emitting passive matrix QLED with a maximal current efficiency of 14.4 cd A^-1 in a pixel size of 5 μm × 39 μm was achieved, indicating the capability of the EHD method in superfine printing and high efficiency QLED. Moreover, a top-emitting device is designed using a capping layer; the maximal current efficiency of top-emission passive matrix QLED devices can reach up to 16.5 cd A^-1. Finally, a two-color (red and green) bottom-emission QLED device with 500 ppi was fabricated. The successful fabrication of these high-efficiency QLEDs with 500 ppi demonstrated that the EHD printing strategy has numerous potential applications in high-resolution and high-performance QLEDs for a range of applications, such as mobile or wearable devices.