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Kubota D, Katoh R, Kanda H, Yaguchi H, Murakami TN, Nishimura N. Spontaneous Heterointerface Modulation by a Methylammonium Tetrafluoroborate Additive for a Narrow-Bandgap FAPbI 3 Photoabsorber in Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:53918-53929. [PMID: 39321019 DOI: 10.1021/acsami.4c11784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2024]
Abstract
Over the past decade, the photovoltaic (PV) performance of perovskite solar cells (PSCs) has been considerably improved with the development of perovskite photoabsorbers. Among these, formamidinium-lead-iodide (FAPbI3) is a promising photoabsorber owing to its narrow bandgap and is mainly used in n-i-p-structured PSCs. The property modulation of FAPbI3 photoabsorbers while retaining their narrow bandgap is imperative for further development of PSCs. Molecular tetrafluoroborate anion (BF4-)-based materials can be used as additives in perovskite layers to prevent bandgap widening, while facilitating perovskite crystal growth; thus, they are suitable for FAPbI3 photoabsorbers in principle. However, BF4--based additives for narrow-bandgap FAPbI3 photoabsorbers have not been developed. This is presumably because of the higher temperatures required for FAPbI3 formation than that for other wide-bandgap perovskites, which likely changes the effects of BF4-based additives from those for wide-bandgap perovskites. In this study, we verified the applicability of methylammonium tetrafluoroborate (MABF4) as an additive in narrow-bandgap FAPbI3 photoabsorbers for improving their PV performance primarily via the spontaneous modulation of the heterointerfaces between FAPbI3 and carrier-transport materials, rather than the bulk quality improvement of FAPbI3 perovskite. At the interface of the hole-transport material and FAPbI3, MABF4 addition effectively eliminates the surface defects in all FAPbI3 components, even in the absence of BF4- over the heated FAPbI3 surface, suggesting a defect-suppression mechanism that differs from that observed in conventional ones. Moreover, at the interface of FAPbI3 and the TiO2 electron-transport material, the BF4-derived species, which likely includes decomposed BF4- owing to the high-temperature heating, spontaneously segregates upon deposition, thereby modulating the heterointerface. Furthermore, in addition to the carrier mobility ratio in FAPbI3 (e-:h+ ≈ 7:3), a time-resolved microwave conductivity measurement revealed that MABF4 addition eliminates carrier traps at the heterointerfaces. Our findings provide insights into promising FAPbI3-based PSCs, offering a valuable tool for their further development.
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Affiliation(s)
- Daisuke Kubota
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
- Graduate School of Science and Engineering, Saitama University, Saitama-shi, Saitama 338-8570, Japan
| | - Ryuzi Katoh
- College of Engineering, Nihon University, Koriyama, Fukushima 963-8642, Japan
| | - Hiroyuki Kanda
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Hiroyuki Yaguchi
- Graduate School of Science and Engineering, Saitama University, Saitama-shi, Saitama 338-8570, Japan
| | - Takurou N Murakami
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
| | - Naoyuki Nishimura
- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Que M, Wu Q, Li Y, Yuan H, Zhong P, He S, Xu Y, Li B, Ma X, Que W. Construction Au/FAPbI 3 Schottky Heterojunction towards a High-Speed Electron Transfer Channel for High-Performance Perovskite Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:34962-34972. [PMID: 38934361 DOI: 10.1021/acsami.4c04856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Formamidinium lead triiodide quantum dot (FAPbI3 QD) exhibits substantial potential in solar cells due to its suitable band gap, extended carrier lifetime, and superior phase stability. However, despite great attempts toward reconfiguring the surface chemical environment of FAPbI3 QDs, achieving the optimal efficiency of charge carrier extraction and transfer in cells remains a challenge. To circumvent this problem, we selectively introduced Au/FAPbI3 Schottky heterojunctions by reducing Au+ to Au0 and subsequently anchoring them on the surface of FAPbI3 QDs, which acts as a light-harvesting layer and establishes high-speed electron transfer channels (Au dot ↔ Au dot). As a result, the champion photoelectric conversion efficiency of solar cells reached 13.68%, a significant improvement over 11.19% of that of FAPbI3-based solar cells. The enhancement is attributed to efficient and directed electron transfer as well as a more aligned energy level arrangement. This work constructed Au/FAPbI3 QD Schottky heterojunctions, providing a viable strategy to enhance QD electron coupling for high-performance optoelectronic applications.
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Affiliation(s)
- Meidan Que
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Qizhao Wu
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Yutian Li
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Hao Yuan
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Peng Zhong
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Shenghui He
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Yuan Xu
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Bo Li
- College of Materials Science and Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, P. R. China
| | - Xinyu Ma
- Northwest Institute of Mechanical and Electrical Engineering, Xianyang 712099, China
| | - Wenxiu Que
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, P. R. China
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Zhang S, Ren F, Sun Z, Liu X, Tan Z, Liu W, Chen R, Liu Z, Chen W. Recent Advances in Interface Engineering for Enhanced Open-Circuit Voltage Regulation in Perovskite Solar Cells. SMALL METHODS 2024; 8:e2301223. [PMID: 38204289 DOI: 10.1002/smtd.202301223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/17/2023] [Indexed: 01/12/2024]
Abstract
In recent years, perovskite solar cells (PSCs) have attracted significant attention due to their excellent photoelectric properties. However, several key performance parameters of these devices still fall short of their theoretical limits. Among these parameters, the regulation of open-circuit voltage (VOC) has been a focal point of intensive research efforts, playing a pivotal role in advancing the efficiency of PSCs. This review first provides an overview of the generation and loss mechanism of VOC. It then discusses the significance of interface engineering in VOC regulation. Recent developments in high-efficiency PSCs realized via interface engineering have been summarized and categorized into three key areas: surface modification, interface structure optimization, and surface dimensional engineering. Finally, a comprehensive summary of past research in this domain and offered insights into the future prospects of enhancing VOC in PSCs is provided.
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Affiliation(s)
- Siqi Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430073, China
| | - Fumeng Ren
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhenxing Sun
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Xiaoxuan Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zhengtian Tan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wenguang Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Rui Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Zonghao Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Wei Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
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Wang Z, Gao H, Wu D, Meng J, Deng J, Cui M. Defects and Defect Passivation in Perovskite Solar Cells. Molecules 2024; 29:2104. [PMID: 38731595 PMCID: PMC11085331 DOI: 10.3390/molecules29092104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Revised: 04/23/2024] [Accepted: 04/24/2024] [Indexed: 05/13/2024] Open
Abstract
Perovskite solar cells have made significant strides in recent years. However, there are still challenges in terms of photoelectric conversion efficiency and long-term stability associated with perovskite solar cells. The presence of defects in perovskite materials is one of the important influencing factors leading to subpar film quality. Adopting additives to passivate defects within perovskite materials is an effective approach. Therefore, we first discuss the types of defects that occur in perovskite materials and the mechanisms of their effect on performance. Then, several types of additives used in perovskite solar cells are discussed, including ionic compounds, organic molecules, polymers, etc. This review provides guidance for the future development of more sustainable and effective additives to improve the performance of solar cells.
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Affiliation(s)
| | - Hongli Gao
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
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Hu R, Wang T, Wang F, Li Y, Sun Y, Liang X, Zhou X, Yang G, Li Q, Zhang F, Zhu Q, Li X, Hu H. Hexylammonium Acetate-Regulated Buried Interface for Efficient and Stable Perovskite Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:653. [PMID: 38668147 PMCID: PMC11055040 DOI: 10.3390/nano14080653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Revised: 04/08/2024] [Accepted: 04/08/2024] [Indexed: 04/29/2024]
Abstract
Due to current issues of energy-level mismatch and low transport efficiency in commonly used electron transport layers (ETLs), such as TiO2 and SnO2, finding a more effective method to passivate the ETL and perovskite interface has become an urgent matter. In this work, we integrated a new material, the ionic liquid (IL) hexylammonium acetate (HAAc), into the SnO2/perovskite interface to improve performance via the improvement of perovskite quality formed by the two-step method. The IL anions fill oxygen vacancy defects in SnO2, while the IL cations interact chemically with Pb2+ within the perovskite structure, reducing defects and optimizing the morphology of the perovskite film such that the energy levels of the ETL and perovskite become better matched. Consequently, the decrease in non-radiative recombination promotes enhanced electron transport efficiency. Utilizing HAAc, we successfully regulated the morphology and defect states of the perovskite layer, resulting in devices surpassing 24% efficiency. This research breakthrough not only introduces a novel material but also propels the utilization of ILs in enhancing the performance of perovskite photovoltaic systems using two-step synthesis.
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Affiliation(s)
- Ruiyuan Hu
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
| | - Taomiao Wang
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Fei Wang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
| | - Yongjun Li
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Yonggui Sun
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Xiao Liang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
| | - Xianfang Zhou
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
| | - Guo Yang
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Qiannan Li
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Fan Zhang
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
| | - Quanyao Zhu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;
| | - Xing’ao Li
- Jiangsu Provincial Engineering Research Center of Low-Dimensional Physics and New Energy & School of Science, Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China; (T.W.); (Y.L.); (Y.S.); (F.Z.)
| | - Hanlin Hu
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic University, 7098 Liuxian Boulevard, Shenzhen 518055, China; (F.W.); (X.L.); (X.Z.); (G.Y.); (Q.L.)
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Li F, Liu K, Dai J. Flexible p-i-n perovskite solar cell with optimized performance by KBF 4 additive. OPTICS EXPRESS 2024; 32:366-378. [PMID: 38175067 DOI: 10.1364/oe.503856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 11/30/2023] [Indexed: 01/05/2024]
Abstract
Flexible perovskite solar cells (F-PSCs) prevail in the clean energy field for their light weight, easy fabrication and installation, but the power conversion efficiency of F-PSCs needs further improvement. In this work, we numerically simulate and experimentally demonstrate the effect of the perovskite trap defects density on the power conversion efficiency. The pseudo-halide KBF4 is employed as the additive to passivate the trap defects in the perovskite films. The high electrophilicity of BF4 - group ensures its entering into perovskite lattice, optimizing crystallinity and improving the qualities of perovskite films, K+ ions can effectively passivate grain boundaries and inhibit halide anion migrations. After KBF4 passivation, trap defect density of the perovskite film was decreased from 8.0 × 1015cm-3 to 3.9 × 1015cm-3, and also the carrier lifetime increased from 108.52 ns to 234.72 ns. Consequently, the power conversion efficiency (PCE) of the F-PSCs devices increased from 13.99% to 16.04%.
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