1
|
Belotcerkovtceva D, Nameirakpam H, Datt G, Noumbe U, Kamalakar MV. High current treated-passivated graphene (CTPG) towards stable nanoelectronic and spintronic circuits. NANOSCALE HORIZONS 2024; 9:456-464. [PMID: 38214968 DOI: 10.1039/d3nh00338h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Achieving enhanced and stable electrical quality of scalable graphene is crucial for practical graphene device applications. Accordingly, encapsulation has emerged as an approach for improving electrical transport in graphene. In this study, we demonstrate high-current treatment of graphene passivated by AlOx nanofilms as a new means to enhance the electrical quality of graphene for its scalable utilization. Our experiments and electrical measurements on large-scale chemical vapor-deposited (CVD) graphene devices reveal that high-current treatment causes persistent and irreversible de-trapping density in both bare graphene and graphene covered by AlOx. Strikingly, despite possible interfacial defects in graphene covered with AlOx, the high-current treatment enhances its carrier mobility by up to 200% in contrast to bare graphene samples, where mobility decreases. Spatially resolved Raman spectroscopy mapping confirms that surface passivation by AlOx, followed by the current treatment, reduces the number of sp3 defects in graphene. These results suggest that for current treated-passivated graphene (CTPG), the high-current treatment considerably reduces charged impurity and trapped charge densities, thereby reducing Coulomb scattering while mitigating any electromigration of carbon atoms. Our study unveils CTPG as an innovative system for practical utilization in graphene nanoelectronic and spintronic integrated circuits.
Collapse
Affiliation(s)
- Daria Belotcerkovtceva
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden.
| | - Henry Nameirakpam
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden.
| | - Gopal Datt
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden.
| | - Ulrich Noumbe
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden.
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden.
| |
Collapse
|
2
|
Feng X, Qiao L, Huang J, Ning J, Wang D, Zhang J, Hao Y. A novel CVD graphene-based synaptic transistors with ionic liquid gate. NANOTECHNOLOGY 2023; 34:215201. [PMID: 36796093 DOI: 10.1088/1361-6528/acbc82] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
The synaptic devices based on various electronic materials have been widely investigated to realize functions of artificial information processing with low power consumption. In this work, a novel CVD graphene field-effect transistor is fabricated with ionic liquid gate to study the synaptic behaviors based on the electrical-double-layer mechanism. It is found that the excitative current is enhanced with the pulse width, voltage amplitude and frequency. With different situations of the applied pulse voltage, the inhibitory and excitatory behaviors are successfully simulated, at the same time the short-term memory is also realized. The corresponding ions migration and charge density variation are analyzed in the different time segments. This work provides the guidance for the design of artificial synaptic electronics with ionic liquid gate for low-power computing application.
Collapse
Affiliation(s)
- Xin Feng
- Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, People's Republic of China
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Lei Qiao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jingjing Huang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jincheng Zhang
- Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, People's Republic of China
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, People's Republic of China
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| |
Collapse
|