Crystal Growth Promotion and Defect Passivation by Hydrothermal and Selenized Deposition for Substrate-Structured Antimony Selenosulfide Solar Cells

Innovative In Situ Passivation Strategy for High-Efficiency Sb2(S,Se)3 Solar Cells

An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb2(S,Se)3) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb2(S,Se)3 solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb2(S,Se)3 solar cells to date. The first principles calculations and the experimental data reveal that incorporating sodium selenosulfate in the ISP strategy effectively functions as an in situ selenization, effectively passivating deep-level cation antisite SbSe defect within the Sb2(S,Se)3 films and significantly suppressing non-radiative recombination in the devices. Space-charge-limited current (SCLC), photoluminescence (PL), and transient absorption spectroscopy (TAS) measurements verify the high quality of the passivated films, showing fewer traps and defects. Moreover, the ISP strategy improved the overall quality of the Sb2(S,Se)3 films, and fine-tuned the energy levels, thereby facilitating enhanced carrier transport. This study thus provides a straightforward and effective method for passivating deep-level defects in Sb2(S,Se)3 solar cells.

An Optimization Path for Sb2(S,Se)3 Solar Cells to Achieve an Efficiency Exceeding 20

Antimony selenosulfide, denoted as Sb2(S,Se)3, has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb2(S,Se)3 solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage (Voc) losses and fill factor (FF) losses. This study delves into the theoretical relationship between Voc and FF, revealing that, under conditions of low Voc and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address Voc and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb2(S,Se)3 solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in Voc, pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced Voc loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb2(S,Se)3, achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting Voc and FF losses in Sb2(S,Se)3 solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.

Suppressing Buried Interface Nonradiative Recombination Losses Toward High-Efficiency Antimony Triselenide Solar Cells

Antimony triselenide (Sb2 Se3 ) has possessed excellent optoelectronic properties and has gained interest as a light-harvesting material for photovoltaic technology over the past several years. However, the severe interfacial and bulk recombination obviously contribute to significant carrier transport loss thus leading to the deterioration of power conversion efficiency (PCE). In this work, buried interface and heterojunction engineering are synergistically employed to regulate the film growth kinetic and optimize the band alignment. Through this approach, the orientation of the precursor films is successfully controlled, promoting the preferred orientational growth of the (hk1) of the Sb2 Se3 films. Besides, interfacial trap-assisted nonradiative recombination loss and heterojunction band alignment are successfully minimized and optimized. As a result, the champion device presents a PCE of 9.24% with short-circuit density (JSC ) and fill factor (FF) of 29.47 mA cm-2 and 63.65%, respectively, representing the highest efficiency in sputtered-derived Sb2 Se3 solar cells. This work provides an insightful prescription for fabricating high-quality Sb2 Se3 thin film and enhancing the performance of Sb2 Se3 solar cells.

Fabrication of Hematite Photoanode Consisting of (110)-Oriented Single Crystals

In this work, α-Fe2 O3 photoanode consisted of (110)-oriented α-Fe2 O3 single crystals were synthesized by a facile hydrothermal method. By using particular additive (C4 MimBF4 ) and regulation of hydrothermal reaction time, the Fe-25 consisted of a single-layer of highly crystalline (110)-oriented crystals with fewer grain boundaries, which was vertically grown on the substrate. As a result, the charge separation efficiency and photoelectrochemical (PEC) performance of Fe-25A (Fe-25 after dehydration treatment) have been greatly improved. Fe-25A yields a photocurrent of 1.34 mA cm-2 (1.23 V vs RHE) and an incident photon-to-current conversion efficiency (IPCE) of 31.95 % (380 nm). With the assistance of cobalt-phosphate water oxidation catalyst (Co-Pi), the PEC performance could be further improved by enhancing the holes transfer at electrode/electrolyte interface and inhibiting surface recombination. Fe-25A/Co-Pi yields a photocurrent of 2.67 mA cm-2 (1.23 V vs RHE) and IPCE value of 50.8 % (380 nm), which is 3.67 times and 2.39 times as that of Fe-2A/Co-Pi. Our work provides a simple method to fabricate highly efficient Fe2 O3 photoanodes consist of characteristic (110)-oriented single crystals with high crystallinity and high quality interface contact to enhance charge separation efficiencies.

Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell

Antimony selenide (Sb₂Se₃) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb₂Se₃ thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb₂Se₃ thin film. Under various characterizations, it found that the Te-doping tended to form Sb₂Te₃-doped Sb₂Se₃, instead of alloy-type Sb₂(Se,Te)₃. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb₂Se₃ thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb₂Se₃ solar cell has been achieved with a V_OC of 474 mV, a J_SC of 25.88 mA/cm², and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb₂Se₃ absorber, and therefore the further efficiency improvement of the Sb₂Se₃ solar cells.

Oxygen Content Modulation Toward Highly Efficient Sb2Se3 Solar Cells

Vapor-transport deposition (VTD) method is the main technique for the preparation of Sb₂Se₃ films. However, oxygen is often present in the vacuum tube in such a vacuum deposition process, and Sb₂O₃ is formed on the surface of Sb₂Se₃ because the bonding of Sb-O is formed more easily than that of Sb-Se. In this work, the formation of Sb₂O₃ and thus the carrier transport in the corresponding solar cells were studied by tailoring the deposition microenvironment in the vacuum tube during Sb₂Se₃ film deposition. Combined by different characterization techniques, we found that tailoring the deposition microenvironment can not only effectively inhibit the formation of Sb₂O₃ at the CdS/Sb₂Se₃ interface but also enhance the crystalline quality of the Sb₂Se₃ thin film. In particular, such modification induces the formation of (hkl, l = 1)-oriented Sb₂Se₃ thin films, reducing the interface recombination of the subsequently fabricated devices. Finally, the Sb₂Se₃ solar cell with the configuration of ITO/CdS/Sb₂Se₃/Spiro-OMeTAD/Au achieves a champion efficiency of 7.27%, a high record for Sb₂Se₃ solar cells prepared by the VTD method. This work offers guidance for the preparation of high-efficiency Sb₂Se₃ thin-film solar cells under rough-vacuum conditions.