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Mihalyuk AN, Bondarenko LV, Tupchaya AY, Gruznev DV, Solovova NY, Golyashov VA, Tereshchenko OE, Okuda T, Kimura A, Eremeev SV, Zotov AV, Saranin AA. Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. NANOSCALE 2024; 16:1272-1281. [PMID: 38126765 DOI: 10.1039/d3nr03830k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.
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Affiliation(s)
- Alexey N Mihalyuk
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia.
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Leonid V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Dimitry V Gruznev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | | | - Vladimir A Golyashov
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Oleg E Tereshchenko
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Taichi Okuda
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - Akio Kimura
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (SKCM2), 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
- Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
| | - Sergey V Eremeev
- Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
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