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Liu D, Srinivas K, Chen A, Ma F, Yu H, Zhang Z, Wang M, Wu Y, Chen Y. Atomic Fe/Zn anchored N, S co-doped nano-porous carbon for boosting oxygen reduction reaction. J Colloid Interface Sci 2023; 635:578-587. [PMID: 36610201 DOI: 10.1016/j.jcis.2022.12.156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Revised: 12/14/2022] [Accepted: 12/28/2022] [Indexed: 01/03/2023]
Abstract
Dual-single-atom catalysts are well-known due to their excellent catalytic performance of oxygen reduction reaction (ORR) and the tunable coordination environment of the active sites. However, it is still challengable to finely modulate the electronic states of the metal atoms and facilely fabricate a catalyst with dual-single atoms homogeneously dispersed on conductive skeletons with good mass transport. Herein, atomic FeNx/ZnNx sites anchored N, S co-doped nano-porous carbon plates/nanotubes material (Fe0.10ZnNSC) is rationally prepared via a facile room-temperature reaction and high-temperature pyrolysis. The as-prepared Fe0.10ZnNSC catalyst exhibits a positive onset potential of 0.956 V, an impressive half-wave potential of 0.875 V, excellent long-term durability, and a high methanol resistance, outperforming the benchmark Pt/C. The outstanding ORR performance of Fe0.10ZnNSC is due to its unique nanoarchitecture: a large specific surface area (1092.8 cm2 g-1) and well-developed nanopore structure ensure the high accessibility of active sites; the high conductivity of the carbon matrix guarantees a strong ability to transport electrons to the active sites; and the optimized electronic states of FeNx and ZnNx sites possess good oxygen intermediate adsorption/desorption capacity. This strategy can be extended to design and fabricate other non-precious dual-single-atom ORR catalysts.
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Affiliation(s)
- Dawei Liu
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Katam Srinivas
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Anran Chen
- School of Materials and Energy, Yunnan University, Kunming 650091, PR China
| | - Fei Ma
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Hesheng Yu
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Ziheng Zhang
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Mengya Wang
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yu Wu
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yuanfu Chen
- School of Integrated Circuit Science and Engineering, and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China.
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