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Lu B, Xia Y, Ren Y, Xie M, Zhou L, Vinai G, Morton SA, Wee ATS, van der Wiel WG, Zhang W, Wong PKJ. When Machine Learning Meets 2D Materials: A Review. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305277. [PMID: 38279508 PMCID: PMC10987159 DOI: 10.1002/advs.202305277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 10/21/2023] [Indexed: 01/28/2024]
Abstract
The availability of an ever-expanding portfolio of 2D materials with rich internal degrees of freedom (spin, excitonic, valley, sublattice, and layer pseudospin) together with the unique ability to tailor heterostructures made layer by layer in a precisely chosen stacking sequence and relative crystallographic alignments, offers an unprecedented platform for realizing materials by design. However, the breadth of multi-dimensional parameter space and massive data sets involved is emblematic of complex, resource-intensive experimentation, which not only challenges the current state of the art but also renders exhaustive sampling untenable. To this end, machine learning, a very powerful data-driven approach and subset of artificial intelligence, is a potential game-changer, enabling a cheaper - yet more efficient - alternative to traditional computational strategies. It is also a new paradigm for autonomous experimentation for accelerated discovery and machine-assisted design of functional 2D materials and heterostructures. Here, the study reviews the recent progress and challenges of such endeavors, and highlight various emerging opportunities in this frontier research area.
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Affiliation(s)
- Bin Lu
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuze Xia
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuqian Ren
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Miaomiao Xie
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Liguo Zhou
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Giovanni Vinai
- Instituto Officina dei Materiali (IOM)‐CNRLaboratorio TASCTriesteI‐34149Italy
| | - Simon A. Morton
- Advanced Light Source (ALS)Lawrence Berkeley National LaboratoryBerkeleyCA94720USA
| | - Andrew T. S. Wee
- Department of Physics and Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC)National University of SingaporeSingapore117542Singapore
| | - Wilfred G. van der Wiel
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
- Institute of PhysicsUniversity of Münster48149MünsterGermany
| | - Wen Zhang
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
| | - Ping Kwan Johnny Wong
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NPU Chongqing Technology Innovation CenterChongqing400000P. R. China
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Wang J, Bagheri Tagani M, Zhang L, Xia Y, Wu Q, Li B, Tian Y, Yin LJ, Zhang L, Qin Z. Realization of black phosphorus-like PbSe monolayer on Au(111) via epitaxial growth. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:485002. [PMID: 37586387 DOI: 10.1088/1361-648x/acf107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Accepted: 08/16/2023] [Indexed: 08/18/2023]
Abstract
Lead selenide (PbSe) has been attracted a lot attention in fundamental research and industrial applications due to its excellent infrared optical and thermoelectric properties, toward reaching the two-dimensional limit. Herein, we realize the black phosphorus-like PbSe (α-phase PbSe) monolayer on Au(111) via epitaxial growth, where a characteristic rectangular superlattice of 5 Å × 9 Å corresponding to 1 × 2 reconstruction with respect to the pristine ofα-phase PbSe is observed by scanning tunneling microscopy. Corresponding density functional theory calculation confirmed the reconstruction and revealed the driven mechanism, the coupling between monolayer PbSe and Au(111) substrate. The metallic feature of differential conductance spectra as well as the transition of the density of states from semiconductor to metal further verified such coupling. As the unique anisotropic structure, our study provides a pathway towards the synthesis of BP-PbSe monolayer. In addition, it builds up an ideal platform for studying fundamental physics and also excellent prospects in PbSe-based device applications.
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Affiliation(s)
- Jing Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | | | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Bo Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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