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Cherniushok O, Parashchuk T, Cardoso-Gil R, Grin Y, Wojciechowski KT. Controlled Phonon Transport via Chemical Bond Stretching and Defect Engineering: The Case Study of Filled β-Mn-Type Phases. Inorg Chem 2024; 63:18030-18042. [PMID: 39271501 PMCID: PMC11445726 DOI: 10.1021/acs.inorgchem.4c02562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2024] [Revised: 08/26/2024] [Accepted: 09/02/2024] [Indexed: 09/15/2024]
Abstract
Controlling the elastic properties of the material could become a powerful tool for tuning the thermal transport in solids. Nevertheless, the impact of the crystal structure, chemical bonding, and elastic properties on the lattice thermal conductivity remains to be elucidated. This is a pivotal issue for the advancement of thermoelectric (TE) materials. In this context, the influence of cation substitution in tetrahedral voids on the structural, thermal, and TE properties of α- and β-PbyGa6-xInxTe10─filled β-Mn-type phases─is reported here. The investigated materials show semiconducting behavior and a change from p- to n-type conductivity, depending on the chemical composition and temperature. Our findings indicate that the electronic transport in β-Mn-type phases is largely influenced by the substantial distortion of the Te framework, which causes the low weighted mobility and strong scattering of charge carriers. The presence of a significant anharmonicity of lattice vibrations results in the ultralow lattice thermal conductivity of PbyGa6-xInxTe10 materials. With increasing x, κL decreases from 0.59 to an extremely low value of 0.36 W m-1 K-1 at 298 K due to the decrease of bonding energy, intensification of anharmonic thermal vibrations of atoms, and formation of point defects. This work demonstrates the efficacy of utilizing the crystal structure and elastic properties to regulate phonon transport in functional materials.
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Affiliation(s)
- Oleksandr Cherniushok
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Krakow, Mickiewicza Avenue 30, 30-059 Krakow, Poland
| | - Taras Parashchuk
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Krakow, Mickiewicza Avenue 30, 30-059 Krakow, Poland
| | - Raul Cardoso-Gil
- Max-Planck-Institut
für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187 Dresden, Germany
| | - Yuri Grin
- Max-Planck-Institut
für Chemische Physik fester Stoffe, Nöthnitzer Strasse 40, 01187 Dresden, Germany
| | - Krzysztof T. Wojciechowski
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Krakow, Mickiewicza Avenue 30, 30-059 Krakow, Poland
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Sharma A, Rangra VS. Ultralow lattice thermal conductivity in type-I Dirac MBene TiB 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:365704. [PMID: 38815597 DOI: 10.1088/1361-648x/ad5262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 05/30/2024] [Indexed: 06/01/2024]
Abstract
MBenes, the emergent novel two-dimensional family of transition metal borides have recently attracted remarkable attention. Transport studies of such two-dimensional structures are very rare and are of sparking interest. In this paper Using Boltzmann transport theory with ab-initio inputs from density functional theory, we examined the transport in TiB2MBene system, which is highly dependent on number of layers. We have shown that the addition of an extra layer (as in bilayer BL) destroys the formation of type-I Dirac state by introducing the positional change and tilt to the Dirac cones, thereby imparting the type-II Weyl metallic character in contrast to Dirac-semimetallic character in monolayer ML. Such non-trivial electronic ordering significantly impacts the transport behavior. We further show that the anisotropic room temperature lattice thermal conductivityκLfor ML (BL) is observed to be 0.41 (0.52) and 2.00 (2.04) W m-1 K-1forxandydirections, respectively, while the high temperatureκL(ML 0.13 W m-1 K-1and BL 0.21 W m-1 K-1at 900 K inxdirection) achieves ultralow values. Our analysis reveals that such values are attributed to enhanced anharmonic phonon scattering, enhanced weighted phase space and co-existence of electronic and phononic Dirac states. We have further calculated the electronic transport coefficients for TiB2MBene, where the layer dependent competing behavior is observed at lower temperatures. Our results further unravels the layer dependent thermoelectric performance, where ML is shown to have promising room-temperature thermoelectric figure of merit (ZT) as 1.71 compared to 0.38 for BL.
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Affiliation(s)
- Ashish Sharma
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005, India
| | - Vir Singh Rangra
- Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005, India
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3
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Han Q, Zong PA, Liu H, Zhang Z, Shen K, Liu M, Mao Z, Song Q, Bai S. Advancing Thermoelectric Performance of Bi 2Te 3 below 400 K. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27541-27549. [PMID: 38758664 DOI: 10.1021/acsami.4c03307] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2024]
Abstract
Thermoelectric cooling devices utilizing Bi2Te3-based alloys have seen increased utilization in recent years. However, their thermoelectric performance remains inadequate within the operational temperature range (≤400 K), with limited research addressing this issue. In this study, we successfully modulated the carrier concentration of the sample through Te content reduction, consequently lowering the peak temperature of the zT value from 400 to 300 K. This led to a substantial enhancement in thermoelectric performance at room temperature (≤400 K). Furthermore, by doping with La, the electrical transport properties have been further optimized, and the lattice thermal conductivity has been effectively reduced at the same time; the average zT value was ultimately elevated from 0.69 to 0.9 within the temperature range of 300-400 K. These findings hold significant promise for enhancing the efficacy of existing thermoelectric cooling devices based on Bi2Te3-based alloys.
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Affiliation(s)
- Qingchen Han
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Peng-An Zong
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
| | - Heng Liu
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Ziming Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Kelin Shen
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Miao Liu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhendong Mao
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Qingfeng Song
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shengqiang Bai
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
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4
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Knura R, Maksymuk M, Parashchuk T, Wojciechowski KT. Achieving high thermoelectric conversion efficiency in Bi 2Te 3-based stepwise legs through bandgap tuning and chemical potential engineering. Dalton Trans 2023; 53:123-135. [PMID: 38050856 DOI: 10.1039/d3dt03061j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
In this study, we show that the energy conversion efficiency in thermoelectric (TE) devices can be effectively improved through simultaneous optimization of carrier concentration, bandgap tuning, and fabrication of stepwise legs. n- and p-type Bi2Te3-based materials were selected as examples for testing the proposed approach. At first, the Boltzmann transport theory was employed to predict the optimal temperature-dependent carrier concentration for high thermoelectric performance over a broad temperature range. Then, the synthesized n-Bi2Te3-xSex and p-Bi2-xSbxTe3 solid solutions were tested to evaluate their suitability for fabricating the stepwise thermoelectric legs. The output energy characteristics of the designed TE devices were estimated using numerical modeling employing the finite element method. The theoretical simulation revealed an improvement in the conversion efficiency between the best homogeneous and stepwise TE legs from 8.8% to 10.1% and from 9.9% to 10.8% in p-type and n-type legs, respectively, which is much higher than the efficiency of the industrial thermoelectric modules (3-6%). The measured conversion efficiency of the fabricated n- and p-type stepwise legs reached very high values of 9.3% and 9.0%, respectively, at the relatively small temperature gradient of 375 K. This work suggests carrier concentration and bandgap engineering accompanied by the stepwise leg approach as powerful methods for achieving high energy conversion efficiency in thermoelectric converters.
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Affiliation(s)
- Rafal Knura
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
- Department of Science, Graduate School of Science and Technology, Kumamoto University, 2 Chome-39-1 Kurokami, Chuo Ward, 860-8555 Kumamoto, Japan
| | - Mykola Maksymuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
| | - Taras Parashchuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
| | - Krzysztof T Wojciechowski
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
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Haruna AY, Luo Y, Ma Z, Li W, Liu H, Li X, Jiang Q, Yang J. High Thermoelectric Performance in Cu-Doped Bi 2Te 2.7Se 0.33 Due to Cl Doping and Multiscale AgBiSe 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49259-49269. [PMID: 37830755 DOI: 10.1021/acsami.3c11449] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
The thermoelectric performance of n-type Bi2Te3 needs further enhancement to match that of its p-type Bi2Te3 counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe2) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi1.995Cu0.005Te2.69Se0.33Cl0.03. Moreover, by incorporating 0.65 wt % AgBiSe2 (ABS) into Bi1.995Cu0.005Te2.69Se0.33Cl0.03, we further reduce its lattice thermal conductivity to ∼0.28 W m-1 K-1 at 353 K owing to the extra phonon scattering of multiscale ABS. Additionally, the Seebeck coefficient enhances (-183.89 μV K-1 at 353 K) owing to the matrix's reduced carrier concentration caused by ABS. As a result, we achieve a high ZT of ∼1.25 (at 353 K) and a high ZTave of ∼1.12 at 300-433 K for Bi1.995Cu0.005Te2.69Se0.33Cl0.03 + 0.65 wt % ABS. This work provides a promising strategy for enhancing the thermoelectric performance of n-type Bi2Te3 through Cu/Cl doping and ABS incorporation.
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Affiliation(s)
- Abubakar Yakubu Haruna
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yubo Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zheng Ma
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wang Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haiqiang Liu
- College of Physics and Electronic Science, Hubei Normal University, Huangshi 435002, China
| | - Xin Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qinghui Jiang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Junyou Yang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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6
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Parashchuk T, Cherniushok O, Smitiukh O, Marchuk O, Wojciechowski KT. Structure Evolution and Bonding Inhomogeneity toward High Thermoelectric Performance in Cu 2CoSnS 4-xSe x Materials. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:4772-4785. [PMID: 37396683 PMCID: PMC10311630 DOI: 10.1021/acs.chemmater.3c00586] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 05/22/2023] [Indexed: 07/04/2023]
Abstract
Lightweight diamond-like structure (DLS) materials are excellent candidates for thermoelectric (TE) applications due to their low costs, eco-friendly nature, and property stability. The main obstacles restricting the energy-conversion performance by the lightweight DLS materials are high lattice thermal conductivity and relatively low carrier mobility. By investigating the anion substitution effect on the structural, microstructural, electronic, and thermal properties of Cu2CoSnS4-xSex, we show that the simultaneous enhancement of the crystal symmetry and bonding inhomogeneity engineering are effective approaches to enhance the TE performance in lightweight DLS materials. Particularly, the increase of x in Cu2CoSnS4-xSex makes the DLS structure with the ideal tetrahedral bond angles of 109.5° favorable, leading to better crystal symmetry and higher carrier mobility in samples with higher selenium content. In turn, the phonon transport in the investigated DLS materials is strongly disturbed due to the bonding inhomogeneity between anions and three sorts of cations inducing large lattice anharmonicity. The increase of Se content in Cu2CoSnS4-xSex only intensified this effect resulting in a lower lattice component of the thermal conductivity (κL) for Se-rich samples. As a result of the enhanced power factor S2ρ-1 and the low κL, the dimensionless thermoelectric figure of merit ZT achieves a high value of 0.75 for Cu2CoSnSe4 DLS material. This work demonstrates that crystal symmetry and bonding inhomogeneity play an important role in the transport properties of DLS materials and provide a path for the development of new perspective materials for TE energy conversion.
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Affiliation(s)
- Taras Parashchuk
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Oleksandr Cherniushok
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Oleksandr Smitiukh
- Department
of Chemistry and Technology, Volyn National
University, Voli Ave 13, Lutsk 43025, Ukraine
| | - Oleg Marchuk
- Department
of Chemistry and Technology, Volyn National
University, Voli Ave 13, Lutsk 43025, Ukraine
| | - Krzysztof T. Wojciechowski
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
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7
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Haruna AY, Luo Y, Li W, Ma Z, Xu T, Jiang Q, Yang J. High Thermoelectric Performance in AgBiSe 2-Incorporated n-Type Bi 2Te 2.69Se 0.33Cl 0.03. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54803-54811. [PMID: 36459084 DOI: 10.1021/acsami.2c17801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Bismuth telluride-based (Bi2Te3) alloys have long been considered the best thermoelectric (TE) materials at room temperature. However, the n-type Bi2Te3 alloys always exhibit poor thermoelectric performance than their p-type counterpart, which severely limits the energy conversion efficiency of thermoelectric devices. Here, we demonstrate that incorporating AgBiSe2 can concurrently regulate the electrical and thermal transport properties as well as improve the mechanical performance of n-type Bi2Te2.69Se0.33Cl0.03 for high thermoelectric performance. Among these, AgBiSe2 effectively enhanced the Seebeck coefficients of n-type Bi2Te2.69Se0.33Cl0.03 due to the reduced carrier concentration and reduced the thermal conductivity of n-type Bi2Te2.69Se0.33Cl0.03 owing to the enhanced phonon scattering by AgBiSe2 as well as its low thermal conductivity nature. Consequently, the simultaneous optimization of electrical and thermal transport properties enables us to achieve a maximum ZT of ∼1.21 (at ∼353 K) and an average ZTave of ∼1.07 (300-433 K) for 3.5 wt % AgBiSe2-incorporated Bi2Te2.69Se0.33Cl0.03, which are ∼25.62 and ∼23.36% larger than those of Bi2Te2.69Se0.33Cl0.03, respectively. This work proves that the incorporation of AgBiSe2 is an efficient way to improve the thermoelectric performance of bismuth telluride-based materials.
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Affiliation(s)
- Abubakar Yakubu Haruna
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Yubo Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Wang Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zheng Ma
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tian Xu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Qinghui Jiang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Junyou Yang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
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