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Waqas M, Niu Y, Tang M, Teketel BS, Huo W, Hao S, Lv W. Lithographic Innovations in the Development of Solid Oxide Cells: Techniques, Advancements, and Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2410114. [PMID: 39989139 DOI: 10.1002/smll.202410114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2024] [Revised: 01/28/2025] [Indexed: 02/25/2025]
Abstract
Solid oxide cells (SOCs) are crucial in energy conversion and storage technologies owing to their versatile properties and reversible operation. Lithographic techniques are used to pattern and fabricate different components of SOCs, facilitating the development of micro- and single-unit SOCs. Here the lithographic techniques used in SOCs development are discussed, highlighting their impact on optimizing component structures at the micro- and nanoscale. Here it is focused on the role of lithographic techniques in improving the electrolyte-electrode interface, enhancing ion conduction and surface exchange, reducing operating temperatures, impacting the surface area of electrodes, and addressing challenges like thermomechanical instabilities and material degradation. Various lithographic techniques are analyzed and discussed for their ability to enhance SOC performance. These techniques enable precise control over micro- and nanoscale structures, improving the electrochemical performance and durability of SOCs. Moreover, the application of lithography in addressing scalability issues for mass production and reducing fabrication defects is also discussed in detail. Emerging trends and prospects in lithographic innovations are also presented, providing a comprehensive outlook on how these techniques can help overcome current limitations in SOC technology. Integrating lithographic methods promises to revolutionize SOCs, making them more efficient and viable for various clean and sustainable energy applications.
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Affiliation(s)
- Muhammad Waqas
- Yangtze Delta Region Institute, University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
- School of Physic, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical Engineering, Sukkur IBA University, Sukkur, 65200, Pakistan
| | - Yinghua Niu
- Yangtze Delta Region Institute, University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Mengjun Tang
- School of Physic, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Birkneh Sirak Teketel
- Yangtze Delta Region Institute, University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Weirong Huo
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Shuwei Hao
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Weiqiang Lv
- Yangtze Delta Region Institute, University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
- School of Physic, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
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