1
|
Zhong C, Alsharafi R, Hu H, Yu K, Yang K, Guo T, Li F. High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification. NANO LETTERS 2024; 24:14125-14132. [PMID: 39448069 DOI: 10.1021/acs.nanolett.4c04545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2024]
Abstract
With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.
Collapse
Affiliation(s)
- Chao Zhong
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
| | - Rashed Alsharafi
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
| | - Hailong Hu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Kuibao Yu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
| | - Kaiyu Yang
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| |
Collapse
|
2
|
Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
Collapse
Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| |
Collapse
|
3
|
Li H, Zhao Y, Qiu Y, Gao H, He K, Yang J, Zhao Y, OuYang G, Ma N, Wei X, Du Z, Jiang L, Wu Y. Multi-Interfacial Confined Assembly of Colloidal Quantum Dots Quasisuperlattice Microcavities for High-Resolution Full-Color Microlaser Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314061. [PMID: 38350441 DOI: 10.1002/adma.202314061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 02/08/2024] [Indexed: 02/15/2024]
Abstract
Colloidal quantum dots (CQDs) are considered a promising material for the next generation of integrated display devices due to their designable optical bandgap and low energy consumption. Owing to their dispersibility in solvents, CQD micro/nanostructures are generally fabricated by solution-processing methods. However, the random mass transfer in liquid restricts the programmable construction in macroscopy and ordered assembly in microscopy for the integration of CQD optical structures. Herein, a multi-interfacial confined assembly strategy is developed to fabricate CQDs programmable microstructure arrays with a quasisuperlattice configuration through controlling the dynamics of three-phase contact lines (TPCLs). The motion of TPCLs dominates the division of liquid film for precise positioning of CQD microstructures, while pinned TPCLs control the solvent evaporation and concentration gradient to directionally drive the mass transfer and packing of CQDs. Owing to their long-range order and adjustable structural dimensions, CQD microring arrays function as high-quality-factor (high-Q) lasing resonant cavities with low thresholds and tunable lasing emission modes. Through the further surface treatment and liquid dynamics control, the on-chip integration of red (R), green (G), and blue (B) multicomponent CQD microlaser arrays are demonstrated. The technique establishes a new route to fabricate large-area, ultrahigh-definition, and full-color CQD laser displays.
Collapse
Affiliation(s)
- Hui Li
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, 475004, P. R. China
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yuyan Zhao
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu, 215123, China
| | - Yuchen Qiu
- College of Chemistry, Jilin University, Changchun, 130012, P. R. China
| | - Hanfei Gao
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu, 215123, China
| | - Ke He
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Future Technology, University of Chinese Academy of Sciences (UCAS), Beijing, 100049, P. R. China
| | - Junchuan Yang
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu, 215123, China
| | - Yingjie Zhao
- College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Guangwen OuYang
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, 475004, P. R. China
| | - Na Ma
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, 475004, P. R. China
| | - Xiao Wei
- Ji Hua Laboratory Foshan, Guangdong, 528200, P. R. China
| | - Zuliang Du
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, 475004, P. R. China
| | - Lei Jiang
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Future Technology, University of Chinese Academy of Sciences (UCAS), Beijing, 100049, P. R. China
| | - Yuchen Wu
- Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, 475004, P. R. China
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu, 215123, China
- School of Future Technology, University of Chinese Academy of Sciences (UCAS), Beijing, 100049, P. R. China
| |
Collapse
|
4
|
Qie Y, Hu H, Yu K, Zhong C, Ju S, Liu Y, Guo T, Li F. Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes. NANO LETTERS 2024; 24:1254-1260. [PMID: 38230959 DOI: 10.1021/acs.nanolett.3c04230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
The photolithographic patterning of fine quantum dot (QD) films is of great significance for the construction of QD optoelectronic device arrays. However, the photolithography methods reported so far either introduce insulating photoresist or manipulate the surface ligands of QDs, each of which has negative effects on device performance. Here, we report a direct photolithography strategy without photoresist and without engineering the QD surface ligands. Through cross-linking of the surrounding semiconductor polymer, QDs are spatially confined to the network frame of the polymer to form high-quality patterns. More importantly, the wrapped polymer incidentally regulates the energy levels of the emitting layer, which is conducive to improving the hole injection capacity while weakening the electron injection level, to achieve balanced injection of carriers. The patterned QD light-emitting diodes (with a pixel size of 1.5 μm) achieve a high external quantum efficiency of 16.25% and a brightness of >1.4 × 105 cd/m2. This work paves the way for efficient high-resolution QD light-emitting devices.
Collapse
Affiliation(s)
- Yuan Qie
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Hailong Hu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Kuibao Yu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Chao Zhong
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Songman Ju
- College of Physical Science and Technology, Dalian University, Dalian 116622, P. R. China
| | - Yanbing Liu
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
| | - Tailiang Guo
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350116, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, P. R. China
| |
Collapse
|