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Varela‐Domínguez N, Claro MS, Vázquez‐Vázquez C, López‐Quintela MA, Rivadulla F. Electric-Field Control of the Local Thermal Conductivity in Charge Transfer Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2413045. [PMID: 39533483 PMCID: PMC11756041 DOI: 10.1002/adma.202413045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2024] [Revised: 11/04/2024] [Indexed: 11/16/2024]
Abstract
Phonons, the collective excitations responsible for heat transport in crystalline insulating solids, lack electric charge or magnetic moment, which complicates their active control via external fields. This presents a significant challenge in designing thermal equivalents of basic electronic circuit elements, such as transistors or diodes. Achieving these goals requires precise and reversible modification of thermal conductivity in materials. In this work, the continuous tuning of local thermal conductivity in charge-transfer SrFeO3-x and La0.6Sr0.4CoO3-x oxides using a voltage-biased Atomic Force Microscopy (AFM) tip at room temperature is demonstrated. This method allows the creation of micron-sized domains with well-defined thermal conductivity, achieving reductions of up to 50%, measured by spatially resolved Frequency Domain Thermoreflectance (FDTR). By optimizing the oxide's chemical composition, the thermal states remain stable under normal atmospheric conditions but can be reverted to their original values through thermal annealing in air. A comparison between Mott-Hubbard and charge-transfer oxides reveals the critical role of redox-active lattice oxygen in ensuring full reversibility of the process. This approach marks a significant step toward fabricating oxide-based tunable microthermal resistances and other elements for thermal circuits.
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Affiliation(s)
- Noa Varela‐Domínguez
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS)Departamento de Química‐FísicaUniversidade de Santiago de CompostelaSantiago de Compostela15782Spain
| | - Marcel S. Claro
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS)Departamento de Química‐FísicaUniversidade de Santiago de CompostelaSantiago de Compostela15782Spain
| | - Carlos Vázquez‐Vázquez
- Instituto de Materiales (iMATUS)Departamento de Química‐FísicaUniversidade de Santiago de CompostelaSantiago de Compostela15782Spain
| | - Manuel Arturo López‐Quintela
- Instituto de Materiales (iMATUS)Departamento de Química‐FísicaUniversidade de Santiago de CompostelaSantiago de Compostela15782Spain
| | - Francisco Rivadulla
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS)Departamento de Química‐FísicaUniversidade de Santiago de CompostelaSantiago de Compostela15782Spain
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Vozel K, Klinar K, Petelin N, Kitanovski A. TCCbuilder: An open-source tool for the analysis of thermal switches, thermal diodes, thermal regulators, and thermal control circuits. iScience 2024; 27:111263. [PMID: 39758989 PMCID: PMC11700648 DOI: 10.1016/j.isci.2024.111263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2024] [Revised: 09/04/2024] [Accepted: 10/23/2024] [Indexed: 01/07/2025] Open
Abstract
In the area of thermal management, thermal control elements (TCEs) and thermal control circuits (TCCs) are proving to be innovative solutions to the challenges of temperature control and heat dissipation in various applications, ranging from electronic cooling to energy conversion and temperature control in buildings. Their integration promises to improve power density, energy efficiency, system reliability and system life expectancy. With the aim of connecting researchers in the field of thermal management and accelerating the development of TCEs and TCCs, we have developed an open-source TCC simulation tool called TCCbuilder that enables a quick and easy time-dependent 1D numerical analysis of the behavior of TCEs and TCCs. It uses the heat conduction equation to solve temperature profiles in different devices. The TCCbuilder application offers features not previously available with any other TCC modeling tool: a large adjacent library of materials and TCEs as well as a user-friendly graphical user interface (GUI).
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Affiliation(s)
- Katja Vozel
- Faculty of Mechanical Engineering, University of Ljubljana, Askerceva 6, 1000 Ljubljana, Slovenia
| | - Katja Klinar
- Faculty of Mechanical Engineering, University of Ljubljana, Askerceva 6, 1000 Ljubljana, Slovenia
| | - Nada Petelin
- Faculty of Mechanical Engineering, University of Ljubljana, Askerceva 6, 1000 Ljubljana, Slovenia
| | - Andrej Kitanovski
- Faculty of Mechanical Engineering, University of Ljubljana, Askerceva 6, 1000 Ljubljana, Slovenia
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Wu Y, Huang A, Ji L, Ji J, Ding Y, Zhou L. Origin of Intrinsically Low Lattice Thermal Conductivity in Solids. J Phys Chem Lett 2024; 15:11525-11537. [PMID: 39526533 DOI: 10.1021/acs.jpclett.4c02770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Reducing lattice thermal conductivity through external modulation techniques such as defect engineering may potentially interfere with electronic transport. Materials with intrinsically low lattice thermal conductivity have the potential to decouple the control of lattice heat transport and electronic transport, which is of great significance in the field of thermoelectric energy conversion. This paper reviews the origin of intrinsically low lattice thermal conductivity, which is directly related to three physical quantities (heat capacity, phonon group velocity, and phonon relaxation time) and is ultimately reflected in the lattice structure and bonding characteristics. An understanding of the fundamental nature of low lattice thermal conductivity can aid in guiding experimental design and theoretically enabling high-throughput prediction of novel low lattice thermal conductivity materials according to the intrinsic properties.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Anqi Huang
- School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Linxuan Ji
- School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jialin Ji
- College of Biological, Chemical Sciences and Engineering, Jiaxing University, Jiaxing, Zhejiang 314001, China
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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Wu Y, Chen Y, Fang Z, Ding Y, Li Q, Xue K, Shao H, Zhang H, Zhou L. Ultralow Lattice Thermal Transport and Considerable Wave-like Phonon Tunneling in Chalcogenide Perovskite BaZrS 3. J Phys Chem Lett 2023; 14:11465-11473. [PMID: 38085873 DOI: 10.1021/acs.jpclett.3c02940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
Chalcogenide perovskites provide a promising avenue for nontoxic, stable thermoelectric materials. Here, the thermal transport and thermoelectric properties of BaZrS3 as a typical orthorhombic perovskite are investigated. An extremely low lattice thermal conductivity κL of 1.84 W/mK at 300 K is revealed for BaZrS3, due to the softening effect of Ba atoms on the lattice and the strong anharmonicity caused by the twisted structure. We demonstrate that coherence contributions to κL, arising from wave-like phonon tunneling, lead to an 18% thermal transport contribution at 300 K. The increasing temperature softens the phonons, thus reducing the group velocity of materials and increasing the scattering phase space. However, it simultaneously reduces the anharmonicity, which is dominant in BaZrS3 and ultimately improves the particle-like thermal transport. In addition, via replacement of the S atom with Se- and Ti-alloying strategy, the ZT value of BaZrS3 is significantly increased from 0.58 to 0.91 at 500 K, making it an important candidate for thermoelectric applications.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ying Chen
- School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhenxing Fang
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi 563006, Guizhou, China
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Qiaoqiao Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Kui Xue
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, China
| | - Hao Zhang
- School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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Qi H, Wu C, Lu P, Liu C. Phonon thermal transport in ferroelectric α-In2Se3 via first-principles calculations. NANOTECHNOLOGY 2023; 35:085701. [PMID: 37963408 DOI: 10.1088/1361-6528/ad0c75] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Accepted: 11/14/2023] [Indexed: 11/16/2023]
Abstract
Two-dimensional (2D) ferroelectrics are promising candidates in the field of microelectronics due to their unique properties such as excellent photoelectric responsiveness. However, the thermal properties of 2D ferroelectrics are less investigated. Here, the thickness dependent thermal conductivity in ferroelectricα-In2Se3is systematically investigated by the first-principles method combined with the phonon Boltzmann transport equation. On this basis, the strain and oxidation effects on the thermal conductivity of monolayerα-In2Se3is further studied. The calculation results show that the thermal conductivity has a significant reduction with decreasing film thickness or increasing tensile strain, and the anharmonic phonon-phonon scattering rate is the intrinsic mechanism for the reduction in thermal conductivity. On the other hand, the replacement of Se atoms by O atoms can achieve a bidirectional and wide-range (12×) tuning of thermal conductivity. The increase in specific heat and phonon group velocity is responsible for the thermal conductivity enhancement at high doping levels while that in phonon-phonon scattering rate is responsible for the thermal conductivity reduction at low doping levels. In all cases, acoustic phonons dominate the in-plane thermal transport behavior. These findings broaden our understanding of phonon transport and its control in ferroelectric semiconductorα-In2Se3.
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Affiliation(s)
- Haoyue Qi
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Chao Wu
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211100, People's Republic of China
| | - Ping Lu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, People's Republic of China
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Wu Y, Chen Y, Peng L, Zhang H, Zhou L. Intervalley scattering induced significant reduction in lattice thermal conductivities for phosphorene. NANOSCALE HORIZONS 2023. [PMID: 37183596 DOI: 10.1039/d3nh00090g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The thermal transport properties of buckled phosphorene (β-P) and antimonene (β-Sb) are investigated using first-principles methods. The large acoustic-optical phonon gaps of 3.8 THz and 2.2 THz enable the four-phonon interaction to play an important role in phonon scattering for both β-P and β-Sb. Considering the electron-phonon coupling, the lattice thermal conductivity can further undergo 84% decrease to 4.9 W mK-1 for p-type β-P at n = 5 × 1013 cm-2. By quantitatively describing the scattering probability of electrons in different paths combined with electron-phonon coupling matrix element analysis, it is found that multi-valley features of electronic band structure and strong electron-phonon coupling strength make electrons have strong intervalley scattering behavior in β-P. The former plays an important role in the energy conservation condition of the scattering process, and the latter determines the selection rule. Our work elucidates the contribution of higher-order phonon interactions as well as electron-phonon coupling effects to lattice thermal conductivity, and provides a new idea for finding materials with low lattice thermal conductivity induced by intervalley scattering.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Ying Chen
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Lei Peng
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Hao Zhang
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
| | - LiuJiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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