Comprehensive Insight into p-Type Bi2Te3-Based Thermoelectrics near Room Temperature

Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance

The coupling of charge and phonon transport in solids is a long-standing issue for thermoelectric performance enhancement. Herein, two new narrow-gap semiconductors with the same chemical formula of GeSe0.65Te0.35 (GST) are rationally designed and synthesized: one with a layered hexagonal structure (H-GST) and the other with a non-layered rhombohedral structure (R-GST). Thanks to the three-dimensional (3D) network structure, R-GST possesses a significantly larger weighted mobility than H-GST. Surprisingly, 3D-structured R-GST displays an extremely low lattice thermal conductivity of ∼0.5 W m-1 K-1 at 523 K, which is comparable to that of layered H-GST. The two-dimensional (2D)-like phonon transport in R-GST stems from the unique off-centering Ge atoms that induce ferroelectric instability, yielding soft polar phonons, as demonstrated by the Boson peak detected by the low-temperature specific heat and calculated phonon spectra. Furthermore, 1 mol % doping of Sb is utilized to successfully suppress the undesired phase transition of R-GST toward H-GST at elevated temperatures. Consequently, a peak ZT of 1.1 at 623 K is attained in the rhombohedral Ge0.99Sb0.01Se0.65Te0.35 sample, which is 1 order of magnitude larger than that of GeSe. This work demonstrates the feasibility of exploring high-performance thermoelectric materials with decoupled charge and phonon transport in off-centering compounds.

Uncovering the crystallography and formation mechanism of nanoscale clusters in Sb-rich SPPs of a p-type (Bi, Sb)2Te3 alloy

Considering that the crystallographic characteristics of the Sb-rich secondary phase particles (SPPs) greatly affect the thermoelectric properties of Bi2Te3 based materials, it is of great significance to explore the mechanism behind the Sb-rich SPPs in the p-type (Bi, Sb)2Te3 material. Here a conventional TEM technique was used to characterize the composition, size and distribution of Sb-rich SPPs in a spark plasma sintered p-type (Bi, Sb)2Te3 alloy. The results indicated that two different morphologies of Sb-rich SPPs including elongated and circular Sb-rich SPPs were frequently observed. Combined with high-resolution transmission electron microscopy, this work provides atomic-scale evidence for the formation mechanism behind the Sb-rich SPPs in the (Bi, Sb)2Te3 material.

Enhancing Interfacial Stability and Mechanical Strength of a CoSb3-Based Thermoelectric Junction Using Ti-Based Alloy Barrier Layers

CoSb3-based filled skutterudites (SKDs) are among the most promising materials for power generation. However, the poor interfacial stability and mechanical strength severely limit their practical application when joined with Cu electrodes. In this study, we propose multiphase Ti-based alloy barrier layers for CoSb3-based thermoelectric junctions to prevent the continuous brittle TiCoSb phase formation. Following the principles of coefficient of thermal expansion matching, we designed three types of Ti80-xNbxCo20 (x = 0, 5, and 10, at.%) barrier layers with the thin intermetallic compound (IMC) layers (<20 μm). Transmission electron microscopy analysis revealed that the interfacial microstructure of the Ti75Nb5Co20/Ce-SKD junction comprises Ti5Sb3, Ti5CoSb3, TiCoSb, and TiSb2 phases, as well as unreacted TiCo, Ti2Co, and Ti(Nb)ss phases, demonstrating a uniform staggered distribution state. After aging tests, the IMC thickness increased gradually from 7 to 12 μm, and the interfacial contact resistivity increased from 7.59 to 15.46 μΩ·cm2. A Cu layer was chosen as a buffer during the brazing process to prevent the formation of cracks and holes. After aging for 360 h at 823 K, the shear strength of the brazed joints remained at ∼21 MPa. Our results demonstrate that the Cu/CuSnP/Cu/Ti75Nb5Co20/Ce-SKD brazed joint exhibits excellent interfacial stability and satisfactory mechanical strength.

Optimized Thermoelectric Cooler Performance by the Structure-Matching Design of Asymmetrical p/n-Type Legs

Commercial Bi2Te3-based thermoelectric (TE) coolers typically comprise equal-size p- and n-type legs. However, this traditional structure limits the cooling temperature differences of TE coolers (TECs) due to identical current density, when their electrical or thermal characteristics differ significantly. This work presents a novel design of p- and n-type TE legs to optimize the performance of TECs. The cooling properties of the materials are initially calculated by theoretical equations and then evaluated by using a combination of finite element simulations and experiments. The research findings suggest that by utilizing higher ZT p-type materials to enhance the TEC cooling performance, further optimization of the ratio of the cross-sectional area of the TE legs (Ap/An) improves the structural matching of the legs, which achieves the maximum figure of merit Z and leads to a 5.4% increase in cooling power density. Additionally, the TEC with optimized Ap/An increases the cooling temperature difference by 3.3 and 2.7 K for the same current at hot side temperatures of 300 and 315 K, respectively, while the coefficient of performance remains unchanged. Moreover, the maximum cooling temperature difference reaches 70 and 74 K, respectively. We anticipate that our results will guide the design and optimization of the TECs.

Transitional structure of {0001} twin in a deformed p-type (Bi,Sb)2Te3 alloy: a direct experimental basis for understanding the twinning mechanism

Twin boundaries provide a strong phonon scattering center to hinder the lattice thermal conductivity in thermoelectric materials, but the underlying evolution process of deformation twinning remains to be figured out. By applying atomic resolution transmission electron microscope (TEM) observations, a novel type of transitional structure of {0001} twin was observed, for the first time, in the p-type (Bi,Sb)2Te3 alloy subjected to three-point bending deformation. The transformation from matrix to (0001) twin can be realized by the following path: matrix → transitional twin → (0001) twin, and this process was completed by the gliding of a total of four partial dislocations (b1 = 1/3[011̄0]) extended in the different (0001) planes. This new finding here will shed light on the nucleation and growth of deformation twins in the p-type (Bi, Sb)2Te3 alloy.

Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors

Conventional thermoelectric generators, predominantly based on the π-type structure, are severely limited in their applications due to the relatively low conversion efficiency. In response to the challenge, in this work, a Bi2Te3-based thermoelectric transistor driven by laser illumination is demonstrated. Under laser illumination, a temperature difference of 46.7 °C is produced between the two ends of the transistor structure. Further, the hole concentrations in each region redistribute and the built-in voltages decrease due to the temperature difference, leading to the formation of the transistor circuit. Additionally, the operation condition of the thermoelectric transistor is presented. The calculation results demonstrate that the maximum output power of such a designed thermoelectric transistor is 0.7093 μW.