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Ren SG, Dong AW, Yang L, Xue YB, Li JC, Yu YJ, Zhou HJ, Zuo WB, Li Y, Cheng WM, Miao XS. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307218. [PMID: 37972344 DOI: 10.1002/adma.202307218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/13/2023] [Indexed: 11/19/2023]
Abstract
Costly data movement in terms of time and energy in traditional von Neumann systems is exacerbated by emerging information technologies related to artificial intelligence. In-memory computing (IMC) architecture aims to address this problem. Although the IMC hardware prototype represented by a memristor is developed rapidly and performs well, the sneak path issue is a critical and unavoidable challenge prevalent in large-scale and high-density crossbar arrays, particularly in three-dimensional (3D) integration. As a perfect solution to the sneak-path issue, a self-rectifying memristor (SRM) is proposed for 3D integration because of its superior integration density. To date, SRMs have performed well in terms of power consumption (aJ level) and scalability (>102 Mbit). Moreover, SRM-configured 3D integration is considered an ideal hardware platform for 3D IMC. This review focuses on the progress in SRMs and their applications in 3D memory, IMC, neuromorphic computing, and hardware security. The advantages, disadvantages, and optimization strategies of SRMs in diverse application scenarios are illustrated. Challenges posed by physical mechanisms, fabrication processes, and peripheral circuits, as well as potential solutions at the device and system levels, are also discussed.
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Affiliation(s)
- Sheng-Guang Ren
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - A-Wei Dong
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ling Yang
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi-Bai Xue
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jian-Cong Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yin-Jie Yu
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hou-Ji Zhou
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Bin Zuo
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yi Li
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Wei-Ming Cheng
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Xiang-Shui Miao
- School of Integrated Circuits, Hubei Key Laboratory of Advanced Memories, Huazhong University of Science and Technology, Wuhan, 430074, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
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Ma Z, Chen W, Cao X, Diao S, Liu Z, Ge J, Pan S. Criticality and Neuromorphic Sensing in a Single Memristor. NANO LETTERS 2023. [PMID: 37326403 DOI: 10.1021/acs.nanolett.3c00389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Resistive random access memory (RRAM) is an important technology for both data storage and neuromorphic computation, where the dynamics of nanoscale conductive filaments lies at the core of the technology. Here, we analyze the current noise of various silicon-based memristors that involves the creation of a percolation path at the intermediate phase of filament growth. Remarkably, we find that these atomic switching events follow scale-free avalanche dynamics with exponents satisfying the criteria for criticality. We further prove that the switching dynamics are universal and show little dependence on device sizes or material features. Utilizing criticality in memristors, we simulate the functionality of hair cells in auditory sensory systems by observing the frequency selectivity of input stimuli with tunable characteristic frequency. We further demonstrate a single-memristor-based sensing primitive for representation of input stimuli that exceeds the theoretical limits dictated by the Nyquist-Shannon theorem.
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Affiliation(s)
- Zelin Ma
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Wanjun Chen
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Xucheng Cao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Shanqing Diao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Zhiyu Liu
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Jun Ge
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Shusheng Pan
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
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