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Ran Q, Wang Y, Zhang W, Xu N, Chen W, Tang X. Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl 3 Nanocrystals. J Phys Chem Lett 2024; 15:1572-1578. [PMID: 38301605 DOI: 10.1021/acs.jpclett.3c03455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Herein, the electrical characteristics, photoelectric properties, resistive switching (RS) mechanism, and flexible storage application of Ag/PMMA&Mn:CsPbCl3/ITO (PMMA = poly(methyl methacrylate)) devices are studied by using the photoelectric material Mn:CsPbCl3 nanocrystals (NCs) embedded in PMMA as the RS layer. The devices exhibit bipolar RS behavior with low operating voltage, excellent cycling endurance (>1000 times), long retention time (≥104 s), high ON/OFF ratio (≈104), and good environmental stability. The flexible memory devices have demonstrated reliable mechanical stability of consecutive 1000 bending cycles. In addition, multilevel data storage is realized by introducing the UV light, and the adjustive resistive switching characteristics is achieved through photoelectric synergistic work. The resistive switching mechanism under the excitation of light has been studied comprehensively. This work may pave a new way for developing the next generation of high-density data storage and photoelectric memristor.
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Affiliation(s)
- Qian Ran
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yuchan Wang
- School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
- Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
| | - Wenxia Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Nannan Xu
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Weiwei Chen
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xiaosheng Tang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
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Liu JY, Zhang XH, Fang H, Zhang SQ, Chen Y, Liao Q, Chen HM, Chen HP, Lin MJ. Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302197. [PMID: 37403302 DOI: 10.1002/smll.202302197] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 06/12/2023] [Indexed: 07/06/2023]
Abstract
Synaptic devices that mimic biological synapses are considered as promising candidates for brain-inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D-D'-A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D') into a metalloviologen-based D-A framework. The obtained material features an unprecedented porous 8-connected bcu-net that accommodates nanoscale [α-SiW12 O40 ]4- counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual-modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi-modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high-performance neuromorphic devices.
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Affiliation(s)
- Jing-Yan Liu
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Xiang-Hong Zhang
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Hua Fang
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Shu-Quan Zhang
- College of Zhicheng, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Yong Chen
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Qing Liao
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hong-Ming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hui-Peng Chen
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, P. R. China
| | - Mei-Jin Lin
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
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