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Chen S, Ma J, Bu N, Zheng T, Chen J, Huang J, Luo X, Zheng Z, Huo N, Li J, Gao W. Two-Dimensional GeS/SnSe 2 Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33740-33751. [PMID: 38907704 DOI: 10.1021/acsami.4c02341] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/24/2024]
Abstract
A two-dimensional (2D) broken-gap (type-III) p-n heterojunction has a unique charge transport mechanism because of nonoverlapping energy bands. In light of this, type-III band alignment can be used in tunneling field-effect transistors (TFETs) and Esaki diodes with tunable operation and low consumption by highlighting the advantages of tunneling mechanisms. In recent years, 2D tunneling photodiodes have gradually attracted attention for novel optoelectronic performance with a combination of strong light-matter interaction and tunable band alignment. However, an in-depth understanding of the tunneling mechanisms should be further investigated, especially for developing electronic and optoelectronic applications. Here, we report a type-III tunneling photodiode based on a 2D multilayered p-GeS/n+-SnSe2 heterostructure, which is first fabricated by the mechanical exfoliation and dry transfer method. Through the Simmons approximation, its various tunneling transport mechanisms dependent on bias and light are demonstrated as the origin of excellent bidirectional photoresponse performance. Moreover, compared to the traditional p-n photodiode, the device enables bidirectional photoresponse capability, including maximum responsivity values of 43 and 8.7 A/W at Vds = 1 and -1 V, respectively, with distinctive photoactive regions from the scanning photocurrent mapping. Noticeably, benefiting from the in-plane anisotropic structure of GeS, the device exhibits an enhanced photocurrent anisotropic ratio of 9, driven by the broader depletion region at Vds = -3 V under 635 nm irradiation. Above all, the results suggest that our designed architecture can be potentially applied to CMOS imaging sensors and polarization-sensitive photodetectors.
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Affiliation(s)
- Shengdi Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingyi Ma
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Nabuqi Bu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Xin Luo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan 528225, P. R. China
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Zheng T, Pan Y, Yang M, Li Z, Zheng Z, Li L, Sun Y, He Y, Wang Q, Cao T, Huo N, Chen Z, Gao W, Xu H, Li J. 2D Free-Standing GeS 1-xSe x with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313721. [PMID: 38669677 DOI: 10.1002/adma.202313721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 03/30/2024] [Indexed: 04/28/2024]
Abstract
Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhongming Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Yingbo He
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Quanhao Wang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Tangbiao Cao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Zuxin Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
| | - Hua Xu
- School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, Foshan, 528225, P. R. China
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
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Cao H, Hu T, Zhang J, Zhao D, Chen Y, Wang X, Yang J, Zhang Y, Tang X, Bai W, Shen H, Wang J, Chu J. Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe 2 Mixed-Dimensional Heterojunction Phototransistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400018. [PMID: 38502873 PMCID: PMC11165519 DOI: 10.1002/advs.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/19/2024] [Indexed: 03/21/2024]
Abstract
Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.
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Affiliation(s)
- Hechun Cao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Tao Hu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jiyue Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Dongyang Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Yan Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
| | - Xudong Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
- Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuanShanxi030006P. R. China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices (MOE) and Department of ElectronicsEast China Normal UniversityShanghai200241P. R. China
| | - Hong Shen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
- Frontier Institute of Chip and SystemFudan UniversityShanghai200433P. R. China
| | - Junhao Chu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesNo.500 Yutian RoadShanghai200083P. R. China
- Shanghai Frontier Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsFudan UniversityShanghai200433P. R. China
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Xu Y, Qi J, Ma C, He Q. Wet-Chemical Synthesis of Elemental 2D Materials. Chem Asian J 2024; 19:e202301152. [PMID: 38469659 DOI: 10.1002/asia.202301152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/13/2024]
Abstract
Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.
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Affiliation(s)
- Yue Xu
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Junlei Qi
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Cong Ma
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Qiyuan He
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
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Chen X, Li S, Zhu L, Li J, Sun Y, Huo N. Dual-Junction Field-Effect Transistor with Ultralow Subthreshold Swing Approaching the Theoretical Limit. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38684053 DOI: 10.1021/acsami.3c17572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Metal-oxide-semiconductor field-effect transistors as basic electronic devices of integrated circuits have been greatly developed and widely used in the past decades. However, as the thickness of the conducting channel decreases, the interface electronic scattering between the gate oxide layer and the channel significantly impacts the performance of the transistor. To address this issue, van der Waals heterojunction field-effect transistors (vdWJFETs) have been proposed using two-dimensional semiconductors, which utilize the built-in electric field at the sharp van der Waals interface to regulate the channel conductance without the need of a complex gate oxide layer. In this study, a novel dual-junction vdWJFET composed of a MoS2 channel and a Te nanosheet gate has been developed. This device achieves an ultralow subthreshold swing (SS) and an extremely low current hysteresis, greatly surpassing the single-junction vdWJFET. In the transistor, the SS decreases from 475.04 to 68.3 mV dec-1, nearly approaching the theoretical limit of 60 mV dec-1 at room temperature. The pinch-off voltage (Vp) decreases from -4.5 to -0.75 V, with a current hysteresis of ∼10 mV and a considerable field-effect mobility (μ) of 36.43 cm2 V-1 s-1. The novel dual-junction vdWJFET provides a new approach to realize a transistor with a theoretical ideal SS and a negligible current hysteresis toward low-power electronic applications.
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Affiliation(s)
- Xinhao Chen
- School of Semiconductor Science and Technology, South China Normal University, Foshan ,Guangdong 528225, P. R. China
| | - Shasha Li
- School of Electronic Engineering, Chaohu University, Hefei, Anhui 238000, P. R. China
| | - Lingyu Zhu
- School of Semiconductor Science and Technology, South China Normal University, Foshan ,Guangdong 528225, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou ,Zhejiang 310027, P. R. China
| | - Yiming Sun
- School of Semiconductor Science and Technology, South China Normal University, Foshan ,Guangdong 528225, P. R. China
- Provincial Key Laboratory of Chip and Integration Technology, Guangzhou ,Guangdong 510631, P. R. China
| | - Nengjie Huo
- School of Semiconductor Science and Technology, South China Normal University, Foshan ,Guangdong 528225, P. R. China
- Provincial Key Laboratory of Chip and Integration Technology, Guangzhou ,Guangdong 510631, P. R. China
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Fu L, He Y, Zheng J, Hu Y, Xue J, Li S, Ge C, Yang X, Peng M, Li K, Zeng X, Wei J, Xue DJ, Song H, Chen C, Tang J. Te x Se 1-x Photodiode Shortwave Infrared Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211522. [PMID: 36972712 DOI: 10.1002/adma.202211522] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Revised: 02/27/2023] [Indexed: 06/16/2023]
Abstract
Short-wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short-wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low-cost, high-performance, and high-stability Tex Se1- x short-wave infrared photodiode detector is reported. The Tex Se1- x thin film is fabricated through CMOS-compatible low-temperature evaporation and post-annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad-spectrum response of 300-1600 nm, a room-temperature specific detectivity of 1.0 × 1010 Jones, a -3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te-based photodiode devices and a dark current density 7 orders of magnitude smaller than Te-based photoconductive and field-effect transistor devices. With a simple Si3 N4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Tex Se1- x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS-compatible infrared imaging chips.
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Affiliation(s)
- Liuchong Fu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiajia Zheng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Yuxuan Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiayou Xue
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Sen Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Ciyu Ge
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xuke Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xiangbin Zeng
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jinchao Wei
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
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