Additive Engineering of the CuSCN Hole Transport Layer for High-Performance Perovskite Semitransparent Solar Cells

Efficient and Stable CuSCN-based Perovskite Solar Cells Achieved by Interfacial Engineering with Amidinothiourea

Cuprous thiocyanate (CuSCN) emerges as a prime candidate among inorganic hole-transport materials, particularly suitable for the fabrication of perovskite solar cells. Nonetheless, there is an Ohmic contact degradation between the perovskite and CuSCN layers. This is induced by polar solvents and undesired purities, which reduce device efficiency and operational stability. In this work, we introduce amidinothiourea (ASU) as an intermediate layer between perovskites and CuSCN to overcome the above obstacles. The characterization results confirm that ASU-modified perovskites have eliminated trap-induced defects by strong chemical bonding between -NH- and C═S from ASU and under-coordinated ions in perovskites. The interfacial engineering based on the ASU also reduces the potential barrier between the perovskite and CuSCN layers. The ASU-treated perovskite solar cells (PSC) with a gold electrode obtains an improved power conversion efficiency (PCE) from 16.36 to 18.03%. Furthermore, after being stored for 1800 h in ambient air (relative humidity (RH) = 45%), the related device without encapsulation maintains over 90% of its initial efficiency. The further combination of ASU and carbon-tape electrodes demonstrates its potential to fabricate low-cost but stable carbon-based PSCs. This work finds a universal approach for the fabrication of efficient and stable PSCs with different device structures.

All-Inorganic Hydrothermally Processed Semitransparent Sb2S3 Solar Cells with CuSCN as the Hole Transport Layer

An inorganic wide-bandgap hole transport layer (HTL), copper(I) thiocyanate (CuSCN), is employed in inorganic planar hydrothermally deposited Sb2S3 solar cells. With excellent hole transport properties and uniform compact morphology, the solution-processed CuSCN layer suppresses the leakage current and improves charge selectivity in an n-i-p-type solar cell structure. The device without the HTL (FTO/CdS/Sb2S3/Au) delivers a modest power conversion efficiency (PCE) of 1.54%, which increases to 2.46% with the introduction of CuSCN (FTO/CdS/Sb2S3/CuSCN/Au). This PCE is a significant improvement compared with the previous reports of planar Sb2S3 solar cells employing CuSCN. CuSCN is therefore a promising alternative to expensive and inherently unstable organic HTLs. In addition, CuSCN makes an excellent optically transparent (with average transmittance >90% in the visible region) and shunt-blocking HTL layer in pinhole-prone ultrathin (<100 nm) semitransparent absorber layers grown by green and facile hydrothermal deposition. A semitransparent device is fabricated using an ultrathin Au layer (∼10 nm) with a PCE of 2.13% and an average visible transmittance of 13.7%.

Defect Passivation Scheme toward High-Performance Halide Perovskite Solar Cells

Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted.